2003 Fairchild Semiconductor Corporation
July 2003
I
S
L9R460P
2, IS
L
9
R
4
60S2,
I
S
L9R460S
3S
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
ISL9R460P2, ISL9R460S2, ISL9R460S3S
4A, 600V StealthTM Diode
General Description
The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are
StealthTM diodes optimized for low loss performance in
high frequency hard switched applications. The
StealthTM family exhibits low reverse recovery current
(I
RRM
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
StealthTM diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49408.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 3
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 20ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
RRM
Peak Repetitive Reverse Voltage
600
V
V
RWM
Working Peak Reverse Voltage
600
V
V
R
DC Blocking Voltage
600
V
I
F(AV)
Average Rectified Forward Current (T
C
= 155C)
4
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave)
8
A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
50
A
P
D
Power Dissipation
58
W
E
AVL
Avalanche Energy (0.5A, 80mH)
10
mJ
T
J
, T
STG
Operating and Storage Temperature Range
-55 to 175
C
T
L
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
C
C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
N/C
JEDEC TO-263AB
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC STYLE TO-262
CATHODE
ANODE
CATHODE
(FLANGE)
Package
Symbol
2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
I
S
L9R460P
2, IS
L
9
R
4
60S2,
I
S
L9R460S
3S
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
R460P2
ISL9R460P2
TO-220AC
N/A
50
R460S2
ISL9R460S2
TO-262
N/A
50
R460S3S
ISL9R460S3S
TO-263AB
N/A
50
R460S3S
ISL9R460S3ST
TO-263AB
24mm
800
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
R
Instantaneous Reverse Current
V
R
= 600V
T
C
= 25C
-
-
100
A
T
C
= 125C
-
-
1.0
mA
V
F
Instantaneous Forward Voltage
I
F
= 4A
T
C
= 25C
-
2.0
2.4
V
T
C
= 125C
-
1.6
2.0
V
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
19
-
pF
t
rr
Reverse Recovery Time
I
F
= 1A, d
IF
/dt = 100A/
s, V
R
= 30V
-
17
20
ns
I
F
= 4A, d
IF
/dt = 100A/
s, V
R
= 30V
-
19
22
ns
t
rr
Reverse Recovery Time
I
F
= 4A,
d
IF
/dt = 200A/
s,
V
R
= 390V, T
C
= 25C
-
17
-
ns
I
RRM
Maximum Reverse Recovery Current
-
2.6
-
A
Q
RR
Reverse Recovery Charge
-
22
-
nC
t
rr
Reverse Recovery Time
I
F
= 4A,
d
IF
/dt = 200A/
s,
V
R
= 390V,
T
C
= 125C
-
77
-
ns
S
Softness Factor (t
b
/t
a
)
-
4.2
-
I
RRM
Maximum Reverse Recovery Current
-
2.8
-
A
Q
RR
Reverse Recovery Charge
-
100
-
nC
t
rr
Reverse Recovery Time
I
F
= 4A,
d
IF
/dt = 400A/
s,
V
R
= 390V,
T
C
= 125C
-
54
-
ns
S
Softness Factor (t
b
/t
a
)
-
3.5
-
I
RRM
Maximum Reverse Recovery Current
-
4.3
-
A
Q
RR
Reverse Recovery Charge
110
-
nC
dI
M
/dt
Maximum di/dt during t
b
-
500
-
A/s
R
JC
Thermal Resistance Junction to Case
-
-
2.6
C/W
R
JA
Thermal Resistance Junction to Ambient TO-220
-
-
62
C/W
R
JA
Thermal Resistance Junction to Ambient TO-262
-
-
62
C/W
R
JA
Thermal Resistance Junction to Ambient TO-263
62
C/W
2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
I
S
L9R460P
2, IS
L
9
R
4
60S2,
I
S
L9R460S
3S
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, F
O
R
W
ARD CURRE
NT
(
A
)
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
7
8
3
25
o
C
175
o
C
100
o
C
150
o
C
V
R
, REVERSE VOLTAGE (V)
I
R
, REV
E
RSE
CURRENT
(
A)
100
10
1
100
200
300
500
600
400
0.1
600
25
o
C
175
o
C
150
o
C
125
o
C
100
o
C
75
o
C
I
F
, FORWARD CURRENT (A)
0
20
30
40
50
70
5
8
t
,
RECO
V
E
R
Y
T
I
M
E
S
(
n
s
)
80
90
1
2
3
4
6
7
t
b
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
t
a
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
60
10
V
R
= 390V, T
J
= 125
o
C
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
100
0
20
40
60
80
700
1000
t
,
RECO
V
E
R
Y
T
I
M
E
S
(
n
s
)
200
300
400
500
600
800
900
100
120
t
b
AT I
F
= 8A, 4A, 2A
t
a
AT I
F
= 8A, 4A, 2A
V
R
= 390V, T
J
= 125
o
C
I
F
, FORWARD CURRENT (A)
1
2
3
4
5
6
7
8
I
RR
M
,
M
A
X RE
VER
SE RE
CO
VE
R
Y
C
URRENT
(
A
)
dI
F
/dt = 800A/s
dI
F
/dt = 500A/s
dI
F
/dt = 200A/s
2
3
4
5
6
7
8
V
R
= 390V, T
J
= 125
o
C
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
100
1
2
3
4
5
6
700
1000
I
RR
M
,
M
A
X RE
VER
SE RE
CO
VE
R
Y
C
URRENT
(
A
)
V
R
= 390V, T
J
= 125
o
C
I
F
= 8A
I
F
= 2A
7
8
200
300
400
500
600
800
900
I
F
= 4A
2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
I
S
L9R460P
2, IS
L
9
R
4
60S2,
I
S
L9R460S
3S
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
Figure 8. Reverse Recovery Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves
(Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
100
1
2
3
4
5
6
700
1000
V
R
= 390V, T
J
= 125
o
C
I
F
= 4A
I
F
= 8A
I
F
= 2A
S
,
RE
VER
SE RE
CO
VE
R
Y
S
O
FT
NESS
F
A
CT
O
R
200
300
400
500
600
800
900
dI
F
/dt, CURRENT RATE OF CHANGE (A/
s)
60
80
100
120
140
160
180
Q
RR
, REVE
RSE RE
CO
V
E
R
Y
CHARGE (
n
C)
100
700
1000
200
300
400
500
600
800
900
V
R
= 390V, T
J
= 125
o
C
I
F
= 8A
I
F
= 4A
I
F
= 2A
V
R
, REVERSE VOLTAGE (V)
C
J
, J
UNC
T
ION CAP
A
C
IT
AN
CE (
p
F
)
0
200
400
600
800
1000
1600
100
1.0
0.03
0.1
10
1200
1400
1800
T
C
, CASE TEMPERATURE (
O
C)
I
F(
A
V
)
, A
VER
A
G
E F
O
R
W
ARD CURRE
NT
(
A
)
150
155
160
170
175
165
0
1
2
3
4
5
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
q
JA
, NO
R
M
A
L
IZ
E
D
T
H
ER
MA
L
I
M
PED
A
N
C
E
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
1.0
2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
I
S
L9R460P
2, IS
L
9
R
4
60S2,
I
S
L9R460S
3S
Test Circuit and Waveforms
Figure 12. It
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 0.5A
L = 80mH
V
DD
= 200V
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
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