www.docs.chipfind.ru
2004 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.5
Features
Precision Fixed Operating Frequency (70kHz)
Low Start-up Current (Typ. 100
A)
Pulse by Pulse Current Limiting
Over Load Protection
Over Current Protection
Over Voltage Protection (Min. 25V)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed frequency oscillator,
under voltage lock-out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shutdown protection, over
voltage protection, and temperature compensated precision
current sources for loop compensation and fault protection
circuitry. compared to discrete MOSFET and PWM controller
or R
CC
solution, a Fairchild Power Switch(FPS) can reduce
total component count, design size, weight and at the same time
increase efficiency, productivity, and system reliability.
It has a basic platform well suited for cost-effective design in
either a flyback converter or a forward converter.
TO-220-5L
1. DRAIN 2. GND 3. V
CC
4. FB 5. S/S
1
Internal Block Diagram
V
O F F S E T
Sense
FET
15V/9V
UVLO
Vref
2.5R
5uA
R
1mA
Good Logic
INTERNAL
BIAS
LEB
+
+
+
+
-
S
R
Q
OSC
CLK
7.5V
Shutdown
Latch
Power-on Reset
/Auto-restart
Rsense
LEB : Leading Edge Blanking
OCL : Over Current Limit
Vcc
GND
Drain
+
+
+
+
-
14V
27V
+
+
+
+
-
OVP-out
OVP
S
R
Q
3
2
1
V
CC
V
REF
VOLTAGE
LIMIT
CIRCUIT
OLP
OCL
(V
S
=1.4V)
TSD
(T
J
=150)
OVP-out
(V
CC
=27V)
V
S
5V
Soft Start 5
Feedback 4
KA5M0765RQC
Fairchild Power Switch(FPS)
KA5M0765RQC
2
Absolute Maximum Ratings
Note:
1. T
j
= 25
C to 150
C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 24mH, starting T
j
= 25
C
Parameter
Symbol
Value
Unit
Drain-Gate Voltage (R
GS
=1M
)
V
DGR
650
V
Gate-Source (GND) Voltage
V
GS
30
V
Drain Current Pulsed
(2)
I
DM
28.0
A
DC
Single Pulsed Avalanche Energy
(3)
E
AS
570
mJ
Continuous Drain Current (T
C
=25
C)
I
D
7.0
A
DC
Continuous Drain Current (T
C
=100
C)
I
D
5.6
A
DC
Maximum Supply Voltage
V
CC,MAX
30
V
Input Voltage Range
V
FB
-0.3 to V
SD
V
Total Power Dissipation
P
D
140
W
Darting
1.11
W/
C
Operating Ambient Temperature
T
A
-25 to +85
C
Storage Temperature
T
STG
-55 to +150
C
KA5M0765RQC
3
Electrical Characteristics (SFET Part)
(Ta=25
C unless otherwise specified)
Note:
1. Pulse test: Pulse width
300
S, duty cycle
2%
2.
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=50
A
650
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=Max., Rating,
V
GS
=0V
-
-
50
A
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
C
-
-
200
A
Static Drain-Source on Resistance
(Note)
R
DS(ON)
V
GS
=10V, I
D
=3.5A
-
1.25
1.6
Forward Transconductance
(Note)
gfs
V
DS
=50V, I
D
=3.5A
3.0
-
-
S
Input Capacitance
Ciss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
1120
-
pF
Output Capacitance
Coss
-
125
-
Reverse Transfer Capacitance
Crss
-
25
-
Turn on Delay Time
td(on)
V
DD
=0.5BV
DSS
, I
D
=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
25
60
nS
Rise Time
tr
-
70
150
Turn Off Delay Time
td(off)
-
105
220
Fall Time
tf
-
65
140
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS
=10V, I
D
=7.0A,
V
DS
=0.8BV
DSS
-
38
50
nC
Gate-Source Charge
Qgs
-
6.5
-
Gate-Drain (Miller) Charge
Qgd
-
18
-
S
1
R
----
=
KA5M0765RQC
4
Electrical Characteristics (Control Part)
(Continued)
(Ta=25
C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
UVLO SECTION
Start Threshold Voltage
V
START
-
14
15
16
V
Stop Threshold Voltage
V
STOP
After turn on
8.4
9
9.6
V
OSCILLATOR SECTION
Initial Accuracy
F
OSC
Ta=25
C
61
67
73
kHz
Frequency Change With Temperature
(2)
F/
T
-25
C
Ta
+85
C
-
5
10
%
Maximum Duty Cycle
Dmax
-
74
77
80
%
FEEDBACK SECTION
Feedback Source Current
I
FB
Ta=25
C, 0V
Vfb
3
V
0.7
0.9
1.1
mA
Shutdown Feedback Voltage
V
SD
Vfb
6.5V
6.9
7.5
8.1
V
Shutdown Delay Current
Idelay
Ta=25
C, 5V
Vfb
V
SD
4
5
6
A
SOFT START SECTION
Soft Start Voltage
V
SS
V
FB
=2V
4.7
5.0
5.3
V
Soft Start Current
I
SS
Sync & S/S=GND
0.8
1.0
1.2
mA
REFERENCE SECTION
Output Voltage
(1)
Vref
Ta=25
C
4.80
5.00
5.20
V
Temperature Stability
(1)(2)
Vref/
T
-25
C
Ta
+85
C
-
0.3
0.6
mV/
C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
I
OVER
Max. inductor current
4.40
5.00
5.60
A
PROTECTION SECTION
Thermal Shutdown Temperature (Tj)
(1)
T
SD
-
140
160
-
C
Over Voltage Protection
V
OVP
-
25
27
29
V
TOTAL DEVICE SECTION
Start Up Current
I
START
V
CC
=14V
-
0.1
0.17
mA
Operating Supply Current
(Control Part Only)
I
OP
V
CC
28
-
7
12
mA
KA5M0765RQC
5
Typical Performance Characteristics (SFET part)
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Note :
1. 250 s Pulse Test
2. T
C
= 25
I
D
, D
r
ai
n C
u
r
r
ent
[A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
25
-55
Notes :
1. V
DS
= 50V
2. 250 s Pulse Test
I
D
,
D
r
ai
n C
u
rrent
[A
]
V
GS
, Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0
3
6
9
12
15
18
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
R
D
S
(
on)
,
[
]
D
r
a
i
n-S
ource On-Re
s
i
s
t
ance
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250s Pulse Test
25
I
DR
,
Rev
e
r
s
e Dr
ain
Cur
r
ent
[
A
]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pac
it
anc
e
s
[
p
F]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V
DS
= 325V
V
DS
= 130V
V
DS
= 520V
Note : I
D
= 6.5 A
V
GS
,
Gat
e
-S
o
u
rc
e V
o
l
t
a
ge [
V
]
Q
G
, Total Gate Charge [nC]
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
KA5M0765RQC
6
Typical Performance Characteristics (SFET part)
(Continued)
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Note :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DS
S
,
(N
orm
a
liz
ed)
D
r
ain-So
urc
e
Brea
k
dow
n Volt
ag
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Note :
1. V
GS
= 10 V
2. I
D
= 6.0 A
R
DS
(
O
N
)
,
(
N
or
m
a
liz
ed)
Dr
ain-
S
our
c
e
On-
R
es
is
t
anc
e
T
J
, Junction Temperature [
o
C]
Figure 7. Breakdown Voltage vs. Temperature
Figure 8. On-Resistance vs. Temperature
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, D
r
ai
n C
u
r
r
ent [A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
I
D
, D
r
ai
n C
u
rr
ent
[A
]
T
C
, Case Temperature [ ]
Figure 9. Max. Safe Operating Area
Figure 10. Max. Drain Current vs. Case Temperature
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
1. Z
JC
(t) = 0.9 /W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
JC
(
t
)
,
T
her
m
a
l
Res
p
ons
e
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Thermal Response
KA5M0765RQC
7
Typical Performance Characteristics (Control part)
(Contiuned)
(These characteristic graphs are normalized at Ta=25
C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25
0
25
50
75
100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25
0
25
50
75
100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Vstart
Figure 1. Operating Frequency
Figure 3. Operating Supply Current
Figure 2. Feedback Sourece Current
Figure 4. Peak Current Limit
Figure 5. Start up Current
Figure 6. Start Thershold Voltage
I
over
KA5M0765RQC
8
Typical Performance Characteristics
(Continued)
(These characteristic graphs are normalized at Ta=25
C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25
0
25
50
75
100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vovp
Figure 7. Stop Threshold Voltage
Figure 9. V
CC
Zener Voltage
Figure 8. Maximum Duty Cycle
Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
KA5M0765RQC
9
Typical Performance Characteristics
(Continued)
(These characteristic graphs are normalized at Ta=25
C)
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25
0
25
50
75
100 125 150
Vss
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25
0
25
50
75 100 125 150
Rdson
Figure 13. Soft Start Voltage
Figure 14. Static Drain-Source on Resistance
( )
KA5M0765RQC
10
Package Dimensions
TO-220-5L
KA5M0765RQC
11
Package Dimensions
(Continued)
TO-220-5L(Forming)
KA5M0765RQC
8/3/04 0.0m 001
Stock#DSxxxxxxxx
2004 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Ordering Information
TU : Non Forming Type
YDTU : Forming Type
Product Number
Package
Rating
Topr (
C)
KA5M0765RQCTU
TO-220F-5L
650V, 7A
-25
C to +85
C
KA5M0765RQCYDTU
TO-220F-5L(Forming)
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