2001 Fairchild Semiconductor Corporation
FYPF10
10DN
Rev. B, November 2001
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
(per diode)
* Pulse Test: Pulse Width=300
s, Duty Cycle
=
2%
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
100
V
V
R
Maximum DC Reverse Voltage
100
V
I
F(AV)
Average Rectified Forward Current @ T
C
= 125
C
10
A
I
FSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
100
A
T
J,
T
STG
Operating Junction and Storage Temperature
-40 to +150
C
Symbol
Parameter
Value
Units
R
JC
Maximum Thermal Resistance, Junction to Case (per diode)
4.0
C/W
Symbol
Parameter
Value
Units
V
FM
*
Maximum Instantaneous Forward Voltage
I
F
= 5A
I
F
= 5A
I
F
= 10A
I
F
= 10A
T
C
= 25
C
T
C
= 125
C
T
C
= 25
C
T
C
= 125
C
0.75
0.65
0.95
0.73
V
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25
C
T
C
= 125
C
1
30
mA
FYPF1010DN
Features
Low forward voltage drop
High frequency properties and switching speed
Guard ring for over-voltage protection
Applications
Switched mode power supply
Freewheeling diodes
TO-220F
1 2 3
1. Anode 2.Cathode 3. Anode
2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
FYPF10
10DN
Typical Characteristics
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 3. Typical Junction Capacitance
(per diode)
Figure 5. Forward Current Derating Curve
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
Figure 4. Thermal Impedance Characteristics
(per diode)
Figure 6. Non-Repetive Sureg Current
(per diode)
0.01
0.1
1
10
0
1
2
3
T
J
=125
o
C
T
J
=75
o
C
T
J
=25
o
C
Forward Voltage Drop, V
F
[V]
F
o
rw
a
r
d
C
u
rre
nt,
I
F
[A
]
0
20
40
60
80
100
100
T
J
=25
o
C
Ju
nct
i
on C
apa
ci
t
a
nce
,
C
J
[p
F
]
Reverse Voltage, V
R
[V]
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
DC
A
v
erage Fo
r
w
ard C
u
rr
e
n
t
,
I
F
(
AV)
[A]
Case Temperature, T
C
[
o
C]
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J
=150
o
C
T
J
=125
o
C
T
J
=75
o
C
T
J
=25
o
C
Re
v
e
r
s
e
Cu
r
r
e
n
t
,
I
R
[m
A
]
Reverse Voltage, V
R
[V]
100
1m
10m
100m
1
10
1
10
T
r
an
s
i
en
t
T
h
e
r
m
a
l
I
m
pe
da
nc
e [
o
C/
W
]
Pulse Duration [s]
1
10
100
0
20
40
60
80
100
120
M
a
x.
F
o
rw
a
r
d S
u
r
g
e C
u
rr
e
n
t,
I
FSM
[A
]
Number of Cycles @ 60Hz
Rev. H4
2001 Fairchild Semiconductor Corporation
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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This datasheet contains final specifications. Fairchild
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