2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC530
2D
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Thermal Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
800
V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current (DC)
2
A
I
CP
*Collector Current (Pulse)
5
A
I
B
Base Current (DC)
1
A
I
BP
*Base Current (Pulse)
2
A
P
C
Power Dissipation(T
C
=25
C)
50
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Characteristics
Rating
Unit
R
jc
Thermal Resistance
Junction to Case
2.5
C/W
R
ja
Junction to Ambient
62.5
KSC5302D
High Voltage High Speed Power Switch
Application
High Breakdown Voltage : BV
CBO
=800V
Built-in Free-wheeling Diode makes efficient anti saturation operation
Suitable for half bridge light ballast Applications
No need to interest an h
FE
value because of low variable storage-time
spread
Even though corner spirit product
Low base drive requirement
1.Base 2.Collector 3.Emitter
1
TO-220
C
B
E
Equivalent Circuit
2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC530
2D
Electrical Characteristics
T
C
=25
C unless otherwise noted
*Pulse Test : Pulse Width=5mS, Duty cycles
10%
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=1mA, I
E
=0
800
-
-
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
400
-
-
V
BV
EBO
Emitter Cut-off Current
I
E
=1mA, I
C
=0 12
-
-
V
I
CBO
Collector Cut-off Current
V
CB
=500V, I
E
=0
-
-
10
A
I
EBO
Emitter Cut-off Current
V
EB
= 9V, I
C
= 0
-
-
10
A
h
FE1
h
FE2
DC Current Gain
V
CE
=1V, I
C
=0.4A
V
CE
=1V, I
C
=1A
20
10
-
-
-
-
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=0.4A, I
B
=0.04A
I
C
=1A, I
B
=0.2A
-
-
-
-
0.4
0.5
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=0.4A, I
B
=0.04A
I
C
=1A, I
B
=0.2A
-
-
-
-
0.9
1.0
V
V
C
ob
Output Capacitance
V
CB
= 10V, f=1MHz
-
-
75
pF
t
ON
Turn On time
V
CC
=300V, I
C
=1A
I
B1
= 0.2A, I
B2
=-0.5A,
R
L
= 300
-
- 150
ns
t
STG
Storage Time
-
-
2
s
t
F
Fall Time
-
-
0.2
s
t
STG
Storage Time
V
CC
=15V, V
Z
=300V
I
C
= 0.8A, I
B1
= 0.16A
I
B2
= -0.16A , L
= 200
H
-
-
2.35
s
t
F
Fall Time
-
-
150
ns
V
F
Diode Forward Voltage
I
F
= 0.4A
I
F
= 1A
-
-
-
-
1.2
1.5
V
V
t
rr
*Reverse Recovery Time
(di/dt = 10A/
s)
I
F
= 0.2A
I
F
= 0.4A
I
F
= 1A
-
-
-
800
1
1.4
-
-
-
ns
s
s
2002 Fairchild Semiconductor Corporation
KSC530
2D
Rev. B1, December 2002
Typcial Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 5. Collector-Base Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
B
= 100mA
I
B
= 120mA
I
B
= 80mA
I
B
= 180mA
I
B
= 160mA
I
B
= 140mA
I
B
= 200mA
I
B
= 60mA
I
B
= 40mA
I
B
= 0
I
C
[
A
]
,
COL
L
E
C
T
O
R
CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
1
10
100
-25
o
C
25
o
C
T
a
= 125
o
C
V
CE
= 5V
h
FE
,
DC
CU
RRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
1
10
100
-20
o
C
25
o
C
T
a
= 125
o
C
V
CE
= 1V
h
FE
,
DC
CU
RRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sa
t
),
V
CE
(sa
t
)[
V
]
,
S
A
T
U
RA
T
I
O
N
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
-20
o
C
25
o
C
T
a
= 125
o
C
I
C
= 5I
B
V
CE
(
s
a
t
)
[
V], SAT
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.1
1
10
-20
o
C
25
o
C
T
a
= 125
o
C
I
C
= 5I
B
V
BE
(
s
a
t
)
,
SAT
U
R
A
T
IO
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
KSC530
2D
Rev. B1, December 2002
Typical Characteristics
(Continued)
Figure 7. Switching Time
Figure 8. Forwrd Diode Voltage
Figure 9. Reverse Recovery Time
Figure 10. Collector Outpt Capacitance
Figure 11. Safe Operating Area
Figure 12. Power Derating
0.1
1
10
0.01
0.1
1
10
V
CC
= 300V
I
C
= 5I
B1
= -2.5I
B2
t
F
t
STG
t
ST
G
, t
F
[
s],
T
I
M
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.1
1
10
V
f
[
V
]
,
F
O
RWA
RD DI
O
D
E
V
O
L
T
A
G
E
I
F
[A], FORWARD DIODE CURRENT
0.2
0.4
0.6
0.8
1.0
0.8
1.0
1.2
1.4
1.6
di/dt = 10A/
s
tr
r
[
s
]
,
RE
V
E
R
S
E
RE
CO
VE
RY
T
I
M
E
I
f
[A], FORWARD CURRENT
1
10
100
1
10
100
1000
f = 1MHz
C
ob
[p
F
], CA
P
A
C
IT
A
N
CE
V
CB
[V], COLLECTOR-BASE VOLTAGE
10
100
1000
0.01
0.1
1
10
100
10
s
DC
1
s
5ms
1ms
I
C
[
A
]
,
CO
LL
E
C
T
O
R CUR
RE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
20
40
60
80
P
C
[W
], P
O
W
E
R
DIS
S
IP
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
Package Dimensions
2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC530
2D
Dimensions in Millimeters
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
2002 Fairchild Semiconductor Corporation
Rev. I1
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not intended to be an exhaustive list of all such trademarks.
DISCLAIMER
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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