2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH112
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
100
V
V
CEO
Collector-Emitter Voltage
100
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
2
A
I
CP
Collector Current (Pulse)
4
A
I
B
Base Current
50
mA
P
C
Collector Dissipation (T
C
=25
C)
20
W
Collector Dissipation (T
a
=25
C)
1.75
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
C
= 30mA, I
B
= 0
100
V
I
CEO
Collector Cut-off Current
V
CE
= 50V, I
B
= 0
20
A
I
CBO
Collector Cut-off Current
V
CB
= 100V, I
B
= 0
20
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
2
mA
h
FE
* DC Current Gain
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
500
1000
200
12K
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
2
3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= 4A, I
B
= 40mA
4
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
= 3A, I
C
= 2A
2.8
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.75A
25
MHz
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0
f = 0.1MHz
100
pF
KSH112
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, " - I " Suffix)
Electrically Similar to Popular TIP112
1.Base 2.Collector 3.Emitter
R1
10
k
R2
0.6
k
Equivalent Circuit
B
E
C
R1
R2
D-PAK
I-PAK
1
1
2002 Fairchild Semiconductor Corporation
KSH112
Rev. A4, October 2002
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
0.01
0.1
1
10
10
100
1000
10000
V
CE
= 3V
h
FE
, DC
CURRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 250 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
a
t
)
[
V]
,
SA
TURATI
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
1
10
100
1000
C
ob
[
p
F
]
,
CAPACI
T
A
N
CE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.01
0.1
1
10
0.1
1
10
V
CC
=30V
I
C
=250I
B
t
D
t
R
t
R
,t
D
(
s)
, T
U
RN
O
N
T
I
ME
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.1
1
10
V
CC
=30V
I
C
=250I
B
t
F
t
STG
t
ST
G
,t
F
[
S
]
, T
U
R
N
OF
F
T
I
ME
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
5m
s
100
s
1m
s
DC
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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