2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE
800/
801/
802/
803
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector- Base Voltage : MJE800/801
: MJE802/803
60
80
V
V
V
CEO
Collector-Emitter Voltage : MJE800/801
: MJE802/803
60
80
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
4
A
I
B
Base Current
0.1
A
P
C
Collector Dissipation (T
C
=25
C)
40
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
: MJE800/801
: MJE802/803
I
C
= 50mA, I
B
= 0
60
80
V
V
I
CEO
Collector Cut-off Current
: MJE800/801
: MJE802/803
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
100
100
A
A
I
CBO
Collector Cut-off Current
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100
C
100
500
A
A
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
2
mA
h
FE
DC Current Gain : MJE800/802
: MJE801/803
: ALL DEVICES
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
750
750
100
V
CE
(sat)
Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
I
C
= 1.5A, I
B
= 30mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
2.5
2.8
3
V
V
V
V
BE
(on)
Base-Emitter ON Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
2.5
2.5
3
V
V
V
MJE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= 1.5 and 2.0A DC
Complement to MJE700/701/702/703
R1
10
k
R2
0.6
k
Equivalent Circuit
B
E
C
R1
R2
1
TO-126
1. Emitter 2.Collector 3.Base
2001 Fairchild Semiconductor Corporation
MJE
800/
801/
802/
803
Rev. A1, February 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area
Figure 6. Power Derating
0
1
2
3
4
5
0
1
2
3
4
5
I
B
= 350
A
I
B
= 400
A
I
B
= 450
A
I
B
= 500
A
I
B
= 300
A
I
B
= 250
A
I
B
= 200
A
I
B
= 150
A
I
B
= 100
A
I
B
= 50
A
I
C
(A
)
,
CO
LLE
C
T
O
R
CURR
E
N
T
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
10
100
1000
10000
V
CE
= 3V
h
FE
, DC
CURRENT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.1
1
10
100
I
C
= 500 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sa
t
),
V
CE
(
s
a
t
)
[
V], SAT
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
100
1
10
100
1000
f=0.1MHZ
I
E
=0
C
ob
[p
F
], CAP
A
CI
T
A
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
1
10
100
1000
0.1
1
10
100
MJE802/803
D.
C.
5m
s
1m
s
MJE800/801
100
s
I
C
[A], CO
L
L
ECT
O
R CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
2001 Fairchild Semiconductor Corporation
Rev. G
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Advance Information
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Design
This datasheet contains the design specifications for
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First Production
This datasheet contains preliminary data, and
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This datasheet contains final specifications. Fairchild
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