NPN General Purpose Amplifier
TN2219A
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
This device is for use as a medium power amplifier and switch requiring
collector currents up to 500 mA. Sourced from Process 19. See
PN2222A for characteristics.
Symbol
Characteristic
Max
Units
TN2219A
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
50
C/W
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
75
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
TN2219A
TO-226
C
B
E
1997 Fairchild Semiconductor Corporation
TN2219A, Rev B
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
75
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CEX
Collector Cutoff Current
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
10
nA
I
CBO
Collector Cutoff Current
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150
C
10
10
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
10
nA
I
BL
Base Cutoff Current
V
CE
= 60 V, V
EB(OFF)
= 3.0
20
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 10 V
35
50
75
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.3
1.0
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 1.0 mA
I
C
= 500 mA, I
B
= 5.0 mA
0.6
1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 100 kHz
8.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
25
pF
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz
I
C
= 10 mA, V
CE
= 10 V, f = 1.0 kHz
50
75
300
375
rb'C
C
Collector Base Time Constant
I
E
= 20 mA, V
CB
= 20 V, f = 31.8 MHz
150
pS
NF
Noise Figure
I
C
= 100
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz, B
W
= 1.0 Hz
4.0
dB
Re(h
ie
)
Real Part of Common-Emitter
High Frequency Input Impedance
I
C
= 20 mA, V
CE
= 20 V, f = 300 MHz
60
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
t
d
Delay Time
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
10
ns
t
r
Rise Time
I
C
= 150 mA, I
B1
= 15 mA
25
ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA,
225
ns
t
f
Fall Time
I
B1
= I
B2
= 15 mA
60
ns
NPN General Purpose Amplifier
(continued)
TN2219A
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