PN2484 / MMBT2484
PN2484
MMBT2484
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1
to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
100
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
PN2484
*MMBT2484
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
C
B
E
TO-92
SOT-23
Mark: 1U
C
B
E
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN2484 / MMBT2484
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
3.0%
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
B
= 0
60
V
BV
CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 10 mA, I
E
= 0
60
V
BV
EBO
Emitter-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 45 V, I
E
= 0
V
CB
= 45 V, I
E
= 0, T
A
= 150
C
10
10
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 5.0 V, I
C
= 0
10
nA
C
obo
Output Capacitance
V
CB
=5.0 V, f = 140 kHz
6.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, f = 140 kHz
6.0
pF
NF
Noise Figure
I
C
= 10
A, V
CE
= 5.0 V,
R
S
= 10k,f = 1.0 kHz,BW =200 Hz
3.0
dB
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
250
800
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 mA, I
B
= 0.1 mA
0.35
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 mA, V
CE
= 5.0 V
0.95
V
NPN General Purpose Amplifier
(continued)
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