March 1996

NDP6050 / NDB6050
N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

________________________________________________________________________________

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

NDP6050

NDB6050

Units

DSS

Drain-Source Voltage

DGR

Drain-Gate Voltage (R

< 1 M

)

GSS

Gate-Source Voltage - Continuous

± 20

- Nonrepetitive (t

< 50 µs)

± 40

Drain Current

- Continuous

- Pulsed

144

Total Power Dissipation @ T

= 25°C

100

Derate above 25°C

0.67

W/°C

STG

Operating and Storage Temperature Range

-65 to 175

°C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

275

°C

NDP6050 Rev. A1 / NDB6050 Rev. B

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.

48A, 50V. R

DS(ON)

= 0.025

@ V

=10V.

Critical DC electrical parameters specified at elevated
temperature.

Rugged internal source-drain diode can eliminate the need for
an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through hole

and surface mount applications.

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE AVALANCHE RATINGS

(Note 1)

DSS

Single Pulse Drain-Source Avalanche
Energy

= 25 V, I

= 48 A

200

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= 250 µA

DSS

Zero Gate Voltage Drain Current

= 50 V, V

= 0 V

250

µA

= 125°C

GSSF

Gate - Body Leakage, Forward

= 20 V, V

= 0 V

100

GSSR

Gate - Body Leakage, Reverse

= -20 V, V

= 0 V

-100

ON CHARACTERISTICS

(Note 1)

GS(th)

Gate Threshold Voltage

= V

, I

= 250 µA

2.9

= 125°C

1.4

2.3

3.6

DS(ON)

Static Drain-Source On-Resistance

= 10 V, I

= 24 A

0.02

0.025

= 125°C

0.032

0.04

D(on)

On-State Drain Current

= 10 V, V

= 10 V

Forward Transconductance

= 10 V, I

= 24 A

DYNAMIC CHARACTERISTICS

iss

Input Capacitance

= 25 V, V

= 0 V,

f = 1.0 MHz

1190

1800

oss

Output Capacitance

475

800

rss

Reverse Transfer Capacitance

150

400

SWITCHING CHARACTERISTICS

(Note 1)

D(on)

Turn - On Delay Time

= 30 V, I

= 48 A,

= 10 V, R

GEN

= 7.5

Turn - On Rise Time

145

300

D(off)

Turn - Off Delay Time

Turn - Off Fall Time

150

Total Gate Charge

= 48 V,

= 48 A, V

= 10V

Gate-Source Charge

7.6

Gate-Drain Charge

NDP6050 Rev. A1 / NDB6050 Rev. B

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS

Maximum Continuos Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

144

Drain-Source Diode Forward Voltage

= 0 V, I

= 24 A

(Note 1)

0.9

1.3

= 125°C

0.8

1.2

Reverse Recovery Time

= 0 V, I

= 48 A,

/dt = 100 A/µs

140

Reverse Recovery Current

3.6

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

1.5

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

NDP6050 Rev. A1 / NDB6050 Rev. B

NDP6050 Rev. A1 / NDB6050 Rev. B

100

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = 20V

6.0

5.0

7.0

8.0

9.0

-50

-25

1 0 0

1 2 5

1 5 0

1 7 5

0.5

0.75

1.25

1.5

1.75

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = 10V

I = 24A

R , NORMALIZED

DS(ON)

-50

-25

100

125

150

175

0.5

0.6

0.7

0.8

0.9

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

V , NORMALIZED

GS(th)

I = 250µA

V = V

100

0.6

0.8

1.2

1.4

1.6

1.8

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(on)

V = 6.0V

9.0

7.0

8.0

100

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 10V

T = 125°C

25°C

-55°C

R , NORMALIZED

DS(on)

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 10V

T = -55°C

Typical Electrical Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

NDP6050 Rev. A1 / NDB6050 Rev. B

-50

-25

100

125

150

175

0.9

0.95

1.05

1.1

1.15

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I = 250µA

BV , NORMALIZED

DSS

0.2

0.4

0.6

0.8

1.2

1.4

0.0001

0.001

0.01

0.1

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

V = 0V

T = 125°C

25°C

-55°C

4 0

6 0

1 0

1 5

2 0

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

48V

I = 48A

V = 12V

24V

1 0

1 0 0

2 0 0

3 0 0

5 0 0

1 0 0 0

2 0 0 0

3 0 0 0

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz
V = 0V

oss

iss

rss

OUT

DUT

GEN

1 0 %

5 0 %

9 0 %

1 0 %

9 0 %

5 0 %

O U T

o n

off

d(off)

d(on)

INVERTED

1 0 %

PULSE W IDTH

Figure 7. Breakdown Voltage Variation with

Temperature

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

Typical Electrical Characteristics

(continued)

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NDB6050

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NDB6050