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Электронный компонент: NDP4060L

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April 1996
NDP4060L / NDB4060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
NDP4060L
NDB4060L
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
16
V
- Nonrepetitive (t
P
< 50 s)
25
I
D
Drain Current
- Continuous
15
A
- Pulsed
45
P
D
Total Power Dissipation @ T
C
= 25C
50
W
Derate above 25C
0.33
W/C
T
J
,T
STG
Operating and Storage Temperature
-65 to 175
C
T
L
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
C
NDP4060L Rev. B / NDB4060L Rev. C
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
15A, 60V. R
DS(ON)
= 0.1
@ V
GS
= 5V
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 15 A
40
mJ
I
AR
Maximum Drain-Source Avalanche Current
15
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
250
A
T
J
=125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -16 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.5
2
V
T
J
=125C
0.65
1.1
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 7.5 A
0.085
0.1
T
J
=125C
0.14
0.16
V
GS
= 10 V, I
D
= 15 A
0.07
0.08
I
D(on)
On-State Drain Current
V
GS
= 5 V, V
DS
= 10 V
15
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 7.5 A
3
8
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
510
600
pF
C
oss
Output Capacitance
170
200
pF
C
rss
Reverse Transfer Capacitance
50
100
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 15 A,
V
GS
= 5 V, R
GEN
= 51
,
R
GS
= 51
9
20
nS
t
r
Turn - On Rise Time
151
250
nS
t
D(off)
Turn - Off Delay Time
35
100
nS
t
f
Turn - Off Fall Time
61
150
nS
Q
g
Total Gate Charge
V
DS
= 48 V,
I
D
= 15 A, V
GS
= 5 V
11
17
nC
Q
gs
Gate-Source Charge
2
nC
Q
gd
Gate-Drain Charge
6.1
nC
NDP4060L Rev. B / NDB4060L Rev. C
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
15
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
45
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 7.5 A
(Note 1)
0.95
1.3
V
T
J
= 125C
0.88
1.2
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 15 A,
dI
F
/dt = 100 A/s
51
100
ns
I
rr
Reverse Recovery Current
3.6
7
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
3
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP4060L Rev. B / NDB4060L Rev. C
NDP4060L Rev. B / NDB4060L Rev. C
0
1
2
3
4
5
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
DS
D
6.0
5.0
4.5
3.5
4.0
3.0
2.5
-50
-25
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 5V
GS
I = 7.5A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
I = 250A
D
V = V
DS
GS
J
V , NORMALIZED
th
0
5
1 0
1 5
20
2 5
30
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = 3.0V
GS
6.0
10
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
-55C
D
V = 5 V
GS
25C
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
1
2
3
4
5
6
0
4
8
1 2
1 6
2 0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55C
J
25C
125C
NDP4060L Rev. B / NDB4060L Rev. C
-50
-25
0
25
50
75
100
125
150
175
0.9
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
1.125
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
0.5
1
5
1 0
2 0
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
4
8
12
16
20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 7.5A
D
V = 12V
DS
24V
48V
0.1
0.2
0.5
1
2
5
10
2 0
50
2 0
5 0
1 0 0
2 0 0
5 0 0
1 0 0 0
1 5 0 0
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
Typical Electrical Characteristics
(continued)
G
D
S
V
DD
R
GS
R
L
V
OUT
V
IN
DUT
R
V
GEN
GEN
1 0 %
5 0 %
9 0 %
1 0 %
9 0 %
9 0 %
5 0 %
V
IN
V
O U T
o n
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
1 0 %
PULSE W IDTH