October 1996
NDP5060 / NDB5060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise note
Symbol
Parameter
NDP5060
NDB5060
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50 s)
40
I
D
Drain Current
- Continuous
26
A
- Pulsed
78
P
D
Total Power Dissipation @ T
C
= 25C
68
W
Derate above 25C
0.45
W/C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
NDP5060 Rev.A
26 A, 60 V. R
DS(ON)
= 0.05
@ V
GS
= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
S
D
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 30 V, I
D
= 26 A
100
mJ
I
AR
Maximum Drain-Source Avalanche Current
26
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
2.9
4
V
T
J
= 125C
1.4
2.2
2.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 13 A
0.04
0.05
T
J
= 125C
0.07
0.08
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
26
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 13 A
9
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
630
pF
C
oss
Output Capacitance
225
pF
C
rss
Reverse Transfer Capacitance
70
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 26 A,
V
GS
= 10 V, R
GEN
= 15
9
20
nS
t
r
Turn - On Rise Time
95
200
nS
t
D(off)
Turn - Off Delay Time
19
40
nS
t
f
Turn - Off Fall Time
48
100
nS
Q
g
Total Gate Charge
V
DS
= 24 V,
I
D
= 26 A, V
GS
= 10 V
20
40
nC
Q
gs
Gate-Source Charge
5
nC
Q
gd
Gate-Drain Charge
11
nC
NDP5060 Rev.A
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
26
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
78
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 13 A
(Note 1)
0.9
1.3
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 26 A,
dI
F
/dt = 100 A/s
54
120
ns
I
rr
Reverse Recovery Current
2.1
8
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
2.2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP5060 Rev.A
NDP5060 Rev.A
-50
-25
0
25
50
75
100
125
150
175
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
V = 10V
GS
I = 13A
D
J
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
175
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V , NORMALIZED
GS(th)
I = 250A
D
V = V
GS
DS
0
10
20
30
40
50
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = 6.0 V
GS
9.0
10
12
7.0
8.0
20
0
10
20
30
40
50
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V =10 V
GS
T = 125C
J
25C
-55C
D
R , NORMALIZED
DS(on)
2
4
6
8
10
0
8
16
24
32
40
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 10V
DS
GS
D
T = -55C
J
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
0
1
2
3
4
5
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 20V
GS
DS
D
9.0
5.0
10
8.0
12
7.0
6.0
NDP5060 Rev.A
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
1.2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0
0.3
0.6
0.9
1.2
1.5
0.0001
0.001
0.01
0.1
1
3
10
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
0
8
16
24
32
40
0
4
8
12
16
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
48V
I = 26A
D
V = 12V
DS
24V
1
2
3
5
10
20
40
60
40
100
200
500
1000
1500
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
1 0 %
5 0 %
9 0 %
1 0 %
9 0 %
9 0 %
5 0 %
V
IN
V
O U T
o n
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
1 0 %
PULSE WIDTH
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
Typical Electrical Characteristics
(continued)
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