July 1996
NDS8858H
Complementary MOSFET Half Bridge
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
30
-30
V
V
GSS
Gate-Source Voltage
20
-20
V
I
D
Drain Current - Continuous
(Note 1a &2)
6.3
-4.8
A
- Pulsed
20
20
P
D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Single Device)
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Single Device)
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Single Device)
(Note 1a)
25
C/W
NDS8858H Rev. C
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
N-Channel 6.3A, 30V, R
DS(ON)
=0.035
@ V
GS
=10V.
P-Channel -4.8A, -30V, R
DS(ON)
=0.065
@ V
GS
=-10V.
High density cell design or extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
P-Gate
V o u t
V o u t
V o u t
V o u t
V-
V +
N -Gate
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
N-Ch
30
V
V
GS
= 0 V, I
D
= -250 A
P-Ch
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
N-Ch
1
A
T
J
= 55C
10
A
V
DS
= -24 V, V
GS
= 0 V
P-Ch
-1
A
T
J
= 55C
-10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
All
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
All
-100
nA
ON CHARACTERISTICS
(Note 3)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
N-Ch
1
1.6
2.8
V
T
J
= 125C
0.7
1.2
2.2
V
DS
= V
GS
, I
D
= -250 A
P-Ch
-1
-1.6
-2.8
T
J
= 125C
-0.7
-1.2
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 4.8 A
N-Ch
0.033
0.035
T
J
= 125C
0.046
0.063
V
GS
= 4.5 V, I
D
= 3.7 A
0.046
0.05
V
GS
= -10 V, I
D
= -4.8 A
P-Ch
0.052
0.065
T
J
= 125C
0.075
0.13
V
GS
= -4.5 V, I
D
= -3.7 A
0.085
0.1
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
N-Ch
20
A
V
GS
= -10 V, V
DS
= -5 V
P-Ch
-20
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 4.8 A
N-Ch
10
S
V
DS
= -10 V, I
D
= -4.8 A
P-Ch
7
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
720
pF
P-Ch
690
C
oss
Output Capacitance
N-Ch
370
pF
P-Ch
430
C
rss
Reverse Transfer Capacitance
N-Ch
250
pF
P-Ch
160
NDS8858H Rev. C
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
N-Ch
12
20
ns
P-Ch
9
20
t
r
Turn - On Rise Time
N-Ch
13
30
ns
P-Ch
20
25
t
D(off)
Turn - Off Delay Time
N-Ch
29
50
ns
P-Ch
40
50
t
f
Turn - Off Fall Time
N-Ch
10
20
ns
P-Ch
19
40
Q
g
Total Gate Charge
N-Channel
V
DS
= 10 V,
I
D
= 4.8 A, V
GS
= 10 V
P-Channel
V
DS
= -10 V,
I
D
= -4.8 A, V
GS
= -10 V
N-Ch
19
30
nC
P-Ch
21
30
Q
gs
Gate-Source Charge
N-Ch
2.1
nC
P-Ch
3.2
Q
gd
Gate-Drain Charge
N-Ch
5.2
nC
P-Ch
5.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
2
A
P-Ch
-2
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.0 A
(Note 2)
N-Ch
0.9
1.2
V
V
GS
= 0 V, I
S
= -2.0 A
(Note 2)
P-Ch
-0.85
-1.2
t
rr
Reverse Recovery Time
N-Channel
V
GS
= 0 V, I
F
= 2.0 A, dI
F
/dt = 100 A/s
N-Ch
100
ns
P-Channel
V
GS
= 0 V, I
F
= -2.0 A, dI
F
/dt = 100 A/s
P-Ch
100
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 105
o
C/W when mounted on a 0.04 in
2
pad of 2oz copper.
c. 125
o
C/W when mounted on a 0.006 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDS8858H Rev. C
1a
1b
1c
NDS8858H Rev. C
0
0.5
1
1.5
2
2.5
3
0
5
1 0
1 5
2 0
2 5
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
V =10V
GS
6.0
4.0
3.5
3.0
5.0
4.5
0
5
10
15
20
25
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
R , NORMALIZED
DS(ON)
V = 3.0V
GS
D
4.0
10
6.0
4.5
5.0
3.5
-50
-25
0
25
50
75
1 0 0
1 2 5
1 5 0
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I = -4.8A
D
R , NORMALIZED
DS(ON)
-4
-3
-2
-1
0
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-4.0
-6.0
-5.0
-3.5
-3.0
-4.5
-20
-16
-12
-8
-4
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -3.5V
GS
-10
-5.0
-6.0
- 4.0
-4.5
Typical Electrical Characteristics
Figure 1. N-Channel On-Region Characteristics.
Figure 2. P-Channel On-Region Characteristics.
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
Figure 5. N-Channel On-Resistance Variation
with Temperature.
Figure 6. P-Channel On-Resistance Variation
with Temperature.
-50
-25
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V =10V
GS
I = 4.8A
D
R , NORMALIZED
DS(ON)
NDS8858H Rev. C
0
5
10
15
20
25
0.5
0.75
1
1.25
1.5
1.75
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
V = 10V
GS
T = 125C
J
25C
-55C
R , NORMALIZED
DS(ON)
-20
-16
-12
-8
-4
0
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -10V
GS
T = 125C
J
25C
-55C
-6
-5
-4
-3
-2
-1
-20
-15
-10
-5
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -10V
DS
GS
D
T = -55C
J
25C
125C
1
2
3
4
5
6
0
5
1 0
1 5
2 0
2 5
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55C
J
25C
125C
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation
with Drain Current and Temperature
.
Figure 9. N-Channel Transfer
Characteristics.
Figure 10. P-Channel Transfer
Characteristics.
Typical Electrical Characteristics
-50
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
-50
-25
0
2 5
5 0
7 5
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250A
D
V = V
DS
GS
J
V , NORMALIZED
th
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
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