July 1996
NDS8928
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
20
-20
V
V
GSS
Gate-Source Voltage
8
-8
V
I
D
Drain Current - Continuous
(Note 1a)
5.5
-3.8
A
- Pulsed
20
-15
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
NDS8928 Rev.D
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
N-Channel 5.5A, 20V, R
DS(ON)
=0.035
@ V
GS
=4.5V
R
DS(ON)
=0.045
@ V
GS
=2.7V
P-Channel -3.8A, -20V, R
DS(ON)
=0.07
@ V
GS
=-4.5V
R
DS(ON)
=0.1
@ V
GS
=-2.7V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
N-Ch
20
V
V
GS
= 0 V, I
D
= -250 A
P-Ch
-20
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
N-Ch
1
A
T
J
= 55
o
C
10
A
V
DS
= -16 V, V
GS
= 0 V
P-Ch
-1
A
T
J
= 55
o
C
-10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
All
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
All
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.4
0.6
1
V
T
J
= 125
o
C
0.3
0.35
0.8
V
DS
= V
GS
, I
D
= -250 A
P-Ch
-0.4
-0.7
-1
T
J
= 125
o
C
-0.3
-0.5
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 5.5 A
N-Ch
0.029
0.035
T
J
= 125
o
C
0.04
0.063
V
GS
= 2.7 V, I
D
= 5 A
0.035
0.045
V
GS
= -4.5 V, I
D
= -3.8 A
P-Ch
0.06
0.07
T
J
= 125
o
C
0.085
0.126
V
GS
= -2.7 V, I
D
= -3.2 A
0.082
0.1
I
D(on)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
N-Ch
20
A
V
GS
= 2.7 V, V
DS
= 5 V
10
V
GS
= -4.5 V, V
DS
= -5 V
P-Ch
-15
V
GS
= -2.7 V, V
DS
= -5 V
-5
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 5.5 A
N-Ch
14
S
V
DS
= -10 V, I
D
= -3.8 A
P-Ch
9
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
760
pF
P-Ch
1120
C
oss
Output Capacitance
N-Ch
440
pF
P-Ch
470
C
rss
Reverse Transfer Capacitance
N-Ch
160
pF
P-Ch
145
NDS8928 Rev.D
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 5 V, I
D
= 1 A,
V
GEN
= 4.5 V, R
GEN
= 6
P-Channel
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
N-Ch
11
20
ns
P-Ch
13
20
t
r
Turn - On Rise Time
N-Ch
30
50
ns
P-Ch
53
70
t
D(off)
Turn - Off Delay Time
N-Ch
54
80
ns
P-Ch
60
80
t
f
Turn - Off Fall Time
N-Ch
20
40
ns
P-Ch
33
40
Q
g
Total Gate Charge
N-Channel
V
DS
= 10 V,
I
D
= 5.5 A, V
GS
= 4.5 V
P-Channel
V
DS
= -10 V,
I
D
= -3.8 A, V
GS
= -4.5 V
N-Ch
21
30
nC
P-Ch
19
30
Q
gs
Gate-Source Charge
N-Ch
2.3
nC
P-Ch
2.4
Q
gd
Gate-Drain Charge
N-Ch
6.8
nC
P-Ch
5.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
1.3
A
P-Ch
-1.3
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
N-Ch
0.8
1.2
V
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
P-Ch
-0.75
-1.2
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz copper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz copper.
c. 135
o
C/W when mounted on a 0.003 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDS8928 Rev.D
1a
1b
1c
NDS8928 Rev.D
Typical Electrical Characteristics: N-Channel
Figure 1. N-Channel On-Region Characteristics.
Figure 2. N-Channel On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. N-Channel On-Resistance Variation with
Temperature.
Figure 4. N-Channel On-Resistance Variation with
Drain Current and Temperature.
Figure 5. N-Channel Transfer
Characteristics.
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.5
3.0
2.7
V =4.5V
GS
DS
D
2.5
1.5
2.0
0
5
10
15
20
25
30
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 2.0V
GS
D
R , NORMALIZED
DS(on)
3.5
4.5
2.7
3.0
2.5
-50
-25
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 4.5V
GS
I = 5.5A
D
R , NORMALIZED
DS(ON)
0
5
1 0
1 5
2 0
2 5
3 0
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
D
V = 4.5 V
GS
-55C
R , NORMALIZED
DS(on)
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 5.0V
DS
GS
D
T = -55C
J
-50
-25
0
25
50
75
1 0 0
1 2 5
1 5 0
0.4
0.6
0.8
1
1.2
1.4
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
NDS8928 Rev.D
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature
.
Figure 9. N-Channel Capacitance Characteristics.
Figure 10. N-Channel Gate Charge Characteristics.
Typical Electrical Characteristics: N-Channel
(continued)
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
-50
-25
0
25
50
75
100
125
150
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
5
1 0
3 0
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
5
10
15
20
25
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 5.5A
D
10V
15V
V = 5V
DS
0.1
0.2
0.5
1
2
5
1 0
2 0
1 0 0
2 0 0
3 0 0
5 0 0
1 0 0 0
2 0 0 0
3 0 0 0
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
25
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55C
J
25C
D
FS
V = 5.0V
DS
125C
PDF 
ZIP