TN6726A / NZT6726
TN6726A
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 77.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.5
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
NZT6726
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
TN6726A
*NZT6726
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
50
C/W
R
JA
Thermal Resistance, Junction to Ambient
125
125
C/W
B
C
C
SOT-223
E
TO-226
C
B
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN6726A / NZT6726
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
30
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 40 V, I
E
= 0
0.1
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
0.1
A
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 1.0 V
60
50
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 A, V
CE
= 1.0 V
1.2
V
h
fe
Small-Signal Current Gain
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
2.5
25
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
30
pF
DC Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P
0.01
0.1
1
3
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
C
ESA
T
- 40 C
25 C
C
= 10
125 C
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
2
0
50
100
150
200
250
300
I - COLLECTOR CURRENT (A)
h
-
T
Y
PIC
A
L
PU
L
S
ED
C
U
R
R
EN
T
G
A
IN
FE
- 40 C
25 C
C
V = 5V
CE
125 C
PNP General Purpose Amplifier
(continued)
TN6726A / NZT6726
DC Typical Characteristics
(continued)
PNP General Purpose Amplifier
(continued)
AC Typical Characteristics
Collector-Base Capacitance
vs. Collector-Base Voltage
Gain Bandwidth Product
vs. Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
P 77
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
BE
S
A
T
C
= 10
- 40 C
25 C
125 C
Base-Emitter ON Voltage vs
Collector Current
P
1
10
100
1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
I
T
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E(O
N
)
C
V = 5V
CE
- 40 C
25 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
- CO
L
L
E
CT
O
R
CU
RR
E
N
T
(
n
A)
A
V = 20V
CB
CBO
TN6726A / NZT6726
AC Typical Characteristics
(continued)
TO-226
POWER DISSIPATION vs
AMBIENT TEMPERATURE
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
DI
S
S
I
P
A
T
I
O
N
(W
)
D
o
SOT-223
Safe Operating Area TO-226
PNP General Purpose Amplifier
(continued)
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