2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
NZT753
Absolute Maximum Ratings*
T
A
=25
C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
C unless otherwise noted
*Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Thermal Characteristics *
T
A
=25
C unless otherwise noted
* Device mounted on FR-4 PCB 36mm
18mm
1.5mm; mounting pad for the collector lead min 6cm
2
.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
- 100
V
V
CBO
Collector-Base Voltage
- 120
V
V
EBO
Emitter-Base Voltage
- 5.0
V
I
C
Collector Current
- Continuous
- 4.0
A
T
J
, T
STG
Operating and Storage Junction Temperature Range
- 55 ~ +150
C
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA, I
B
= 0
-100
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
A, I
E
= 0
-120
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -100
A, I
C
= 0
-5.0
V
I
CBO
Collector-Base Cutoff Current
V
CB
= -100V, I
E
= 0
T
A
= 100
C
-0.1
-10
A
A
I
EBO
Emitter-Base Cutoff Current
V
EB
= -4V, I
C
= 0
-0.1
A
On Characteristics *
h
FE
DC Current Gain
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1.0A
70
100
55
300
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -1.0A, I
C
= -50mA
-0.3
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -1.0A, I
B
= -100mA
-1.25
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -2.0V, I
C
= -1.0A,
-1.0
V
Small Signal Characteristics
f
T
Transition Frequency
V
CE
= -5V, I
C
= -100mA, f = 100MHz
75
MHz
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25C
1.2
9.7
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
103
C/W
NZT753
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P.
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter
2003 Fairchild Semiconductor Corporation
Rev. I2
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Advance Information
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This datasheet contains the design specifications for
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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This datasheet contains final specifications. Fairchild
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