0.210 (5.33)
0.420 (10.67)
0.328 (8.33)
0.373 (9.47)
0.703 (17.86)
0.150 (3.81)
MIN
0.603 (15.32)
0.226 (5.74)
0.150 (3.81)
NOM
FUNCTION
(C) COLLECTOR
(E) EMITTER
(K) CATHODE
(A)
(K)
(E)
(C)
REFLECTIVE
SURFACE
0.020 (0.51)
4X
0.300 (7.62)
(A) ANODE
WHITE
BLUE
ORANGE
WIRE COLOR
GREEN
24.0 (609.60)
MIN #26 AWG
ES
PACKAGE DIMENSIONS
FEATURES
Phototransistor output
High Sensitivity
Low cost plastic housing
#26 AWG, 24 inch PVC wire termination
Infrared transparent plastic covers for dust protection
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
A
K
C
E
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300351
7/02/01
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DESCRIPTION
The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-
ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
EMITTER
I
F
= 40 mA
V
F
--
--
1.7
V
Forward Voltage
Reverse Current
V
R
= 2.0 V
I
R
--
--
100
A
Peak Emission Wavelength
I
F
= 20 mA
!
PE
--
940
--
nm
SENSOR
I
C
= 1 mA
BV
CEO
30
--
--
V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
I
E
= 0.1 mA
BV
ECO
5
--
--
V
Collector-Emitter Dark Current
V
CE
= 10 V, I
F
= 0 mA
I
CEO
--
--
100
nA
COUPLED
On-state Collector Current
I
F
= 40 mA, V
CE
= 5 V
I
C(ON)
mA
QRB1133
D = .150"
(5,6)
0.20
--
--
QRB1134
0.60
--
Collector-Emitter
I
F
= 20 mA, I
C
= 0.5 mA
V
CE (SAT)
--
--
0.4
V
Saturation Voltage
Rise Time
V
CE
= 5 V, R
L
= 100
"
t
r
--
8
--
s
Fall Time
I
C(ON)
= 5 mA
t
f
--
8
--
Cross Talk
I
F
= 40 mA, V
CE
= 5 V
(7)
I
CX
--
--
1.00
A
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DS300351
Parameter
Symbol
Rating
Units
Operating Temperature
T
OPR
-40 to +85
C
Storage Temperature
T
STG
-40 to +85
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
EMITTER
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
100
mW
SENSOR
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Collector Voltage
V
ECO
50
V
Collector Current
I
C
20
mA
Power Dissipation
(1)
P
D
100
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES
1. Derate power dissipation linearly 1.67 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16"
(1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
1.60
10.0
1.00
1.00
0.8
0.6
0.4
0.2
0
0.10
0.01
.001
10
2
10
1
10
1.0
10
-1
10
-2
10
-3
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.1
0.0
-50
-25
0
25
50
75
10
20
30
40
50
1.0
10
100
Fig. 1 Forward Voltage
vs. Forward Current
Fig. 2 Normalized Collector Current
vs. Forward Current
Fig. 3 Normalized Collector Current
vs. Temperature
Fig. 5 Normalized Collector Current
vs. Distance
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (C)
DISTANCE IN MILS
Fig. 4 Normalized Collector Dark
Current vs. Temperature
T
A
- AMBIENT TEMPERATURE (C)
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
I
CEO
- COLLECT
OR D
ARK CURRENT
I
C
- COLLECT
OR CURRENT (mA)
I
C
- COLLECT
OR CURRENT (mA)
V
CE
= 5 V
D = .05"
I
F
= 10 m,A
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
50
-25
0
25
50
75
100
NORMALIZED COLLECT
OR CURRENT (mA)
I
F
= 20 m,A
V
CE
= 5 V
100
150
200
250
300
350
400
450
500
V
CE
= 10 V
DS300351
7/02/01
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TYPICAL PERFORMANCE CURVES
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
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DS300351
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
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