PACKAGE DIMENSIONS
0.173 (4.39)
0.120 (3.05)
0.240 (6.10)
0.183 (4.65)
0.500 (12.7)
MIN
0.020 (0.51)
SQ. (4X)
0.100 (2.54)
0.083 (2.11)
OPTICAL
CENTERLINE
PIN 1 COLLECTOR
PIN 2 EMITTER
PIN 4 CATHODE
PIN 3 ANODE
PIN 1 INDICATOR
0.083 (2.11)
3
4
2
1
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
3. Pins 2 and 4 typically .050" shorter than pins 1 and 3.
4. Dimensions controlled at housing surface.
NOTES
(Applies to Max Ratings and Characteristics Tables.)
1. Derate power dissipation linearly 1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning
agents.
4. Soldering iron
1/16"
(1.6mm) from housing.
5. As long as leads are not under any spring tension.
6. D is the distance from the sensor face to the reflective surface.
7. Cross talk (I
CX
) is the collector current measured with the
indicator current on the input diode and with no reflective surface.
8. Measured using an Eastman Kodak neutral white test card with
90% diffused reflecting as a reflective surface.
1 of 4
100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
FEATURES
Phototransistor Output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact Package
Daylight filter on sensor
1
4
2
3
SCHEMATIC
Parameter
Symbol
Rating
Units
Operating Temperature
T
OPR
-40 to +85
C
Storage Temperature
T
STG
-40 to +85
C
Lead Temperature (Solder Iron)
(2,3)
T
SOL-I
240 for 5 sec
C
Lead Temperature (Solder Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
EMITTER
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
100
mW
SENSOR
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Collector Voltage
V
ECO
V
Power Dissipation
(1)
P
D
100
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
EMITTER
I
F
= 20 mA
V
F
--
--
1.7
V
Forward Voltage
Reverse Current
V
R
= 5 V
I
R
--
--
100
A
Peak Emission Wavelength
I
F
= 20 mA
!
PE
--
940
--
nm
SENSOR
I
C
= 1 mA
BV
CEO
30
--
--
V
Collector-Emitter Breakdown
Emitter-Collector Breakdown
I
E
= 0.1 mA
BV
ECO
5
--
--
V
Dark Current
V
CE
= 10 V, I
F
= 0 mA
I
D
--
--
100
nA
COUPLED
I
F
= 20 mA, V
CE
= 5 V
I
C(ON)
0.300
--
--
mA
QRD1113 Collector Current
D = .050"
(6,8)
QRD1114 Collector Current
I
F
= 20 mA, V
CE
= 5 V
I
C(ON)
1
--
--
mA
D = .050"
(6,8)
Collector Emitter
I
F
= 40 mA, I
C
= 100 A
V
CE (SAT)
--
--
0.4
V
Saturation Voltage
D = .050"
(6,8)
Cross Talk
I
F
= 20 mA, V
CE
= 5 V, E
E
= 0
(7)
I
CX
--
.200
10
A
Rise Time
V
CE
= 5 V, R
L
= 100
"
t
r
--
10
--
s
Fall Time
I
C(ON)
= 5 mA
t
f
--
50
--
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25C)
2 of 4
100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
3 of 4
100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (C)
T
A
- AMBIENT TEMPERATURE (C)
REFLECTIVE SURFACE DISTANCE (mils)
V
F
- FOR
W
ARD
V
O
L
T
A
GE (mA)
I
D
- COLLECT
OR D
ARK CURRENT
NORMALIZED - COLLECT
OR CURRENT (mA)
I
C
- COLLECT
OR CURRENT (mA)
I
C
- COLLECT
OR CURRENT (mA)
1.60
10.0
1.0
0.8
0.6
0.4
0.2
0
1.00
0.10
0.01
.001
1.0
.9
0
-50
-25
25
50
75
0
-50
-25
25
50
75
100
0
10
20
30
40
50
1.40
1.20
1.00
0.20
0.60
0.40
0.20
0.1
10
2
10
1
10
1.0
10
-1
10
-2
10
-3
1.0
10
100
Fig. 1 Forward Voltage vs.
Forward Current
Fig. 2 Normalized Collector Current vs.
Forward Current
Fig. 3 Normalized Collector Current vs.
Temperature
Fig. 4 Normalized Collector Dark Current vs.
Temperature
Fig. 5 Normalized Collector Current vs.
Distance
I
F
= 10 mA
V
CE
= 5 V
.8
.7
.6
.5
.4
.3
.2
.1
0
0
50
100
150
200
250
300
350
400
450
500
V
CE
= 5 V
D = .05"
I
F
= 20 mA
V
CE
= 5 V
V
CE
= 10 V
TYPICAL PERFORMANCE CURVES
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
www.fairchildsemi.com
2000 Fairchild Semiconductor Corporation
4 of 4
QRD1113/1114
REFLECTIVE OBJECT SENSOR
100030A
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