EMITTER

0.174 (4.44)

0.060 (1.50)

0.030 (0.76)

0.047 (1.20)

0.177 (4.51)

0.224 (5.71)

0.5 (12.7)

MIN

0.020 (0.51)

SQ. (2X)

0.060 (1.52)

0.100 (2.54)

R 0.030 (0.76)

PACKAGE DIMENSIONS

NOTES:

1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions

unless otherwise specified.

FEATURES

· NPN Silicon Phototransistor with internal base-emitter resistance

· Package Type: Sidelooker

· Medium Reception Angle, 50°

· Clear Plastic Package

· Matching Emitter: QEE213

Collector

Emitter

SCHEMATIC

;

LOW LIGHT REJECTION PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE243

2001 Fairchild Semiconductor Corporation
DS300288

9/20/01

1 OF 3

www.fairchildsemi.com

DESCRIPTION

The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package.

Parameter

Symbol

Rating

Unit

Operating Temperature

OPR

-40 to + 100

°C

Storage Temperature

STG

-40 to + 100

°C

Soldering Temperature (Iron)

(2,3,4)

SOL-I

240 for 5 sec

°C

Soldering Temperature (Flow)

(2,3)

SOL-F

260 for 10 sec

°C

Collector-Emitter Voltage

Emitter-Collector Voltage

Power Dissipation

(1)

100

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise specified)

NOTES

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron

1/16"

(1.6 mm) minimum from housing.

5. = 950 nm, GaAs source
6. The slope is defined by (I

-I

) / (E

-E

) where I

is the collector current at E

and I

the collector current at E

7. Knee point is defined as being required to increase I

to 50 µA.

LOW LIGHT REJECTION PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE243

Parameter

Test Conditions

Symbol

Min

Typ

Max

Units

Peak Sensitivity

880

Reception Angle

±25

Deg.

Collector Emitter Dark Current

= 15 V, E

= 0

100

Collector Emitter Breakdown

= 100 µA

CEO

Saturation Voltage

= 1 mW/cm2

CE (sat)

0.4

= 0.1 mA

(5)

Rise Time

= 5 V, R

= 1000 V

µs

Fall Time

= 1 mA

µs

Light Current Slope

(6)

= 5 V, E

1 = 1 mW/cm2

(5)

1.0

mA/mW/cm2

2 = 0.5 mW/cm2

(5)

Knee Point

(5,7)

= 5 V

0.125

mW/cm2

ELECTRICAL / OPTICAL CHARACTERISTICS

=25°C)

www.fairchildsemi.com

2 OF 3

9/20/01

DS300288

LOW LIGHT REJECTION PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE243

DS300288

9/20/01

3 OF 3

www.fairchildsemi.com

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.

LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.

2. A critical component in any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.

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