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Электронный компонент: RFD16N03L

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CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1995
5-31
S E M I C O N D U C T O R
RFD16N03L,
RFD16N03LSM
16A, 30V, Avalanche Rated N-Channel Logic Level
Enhancement-Mode Power MOSFETs
December 1995
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Symbol
DRAIN (FLANGE)
SOURCE
GATE
DRAIN
DRAIN (FLANGE)
SOURCE
GATE
DRAIN
SOURCE
GATE
Features
16A, 30V
r
DS(ON)
= 0.022
Temperature Compensating PSPICE Model
Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The RFD16N03L and RFD16N03LSM are N-channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N03LSM9A.
Formerly developmental type TA49030.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFD16N03L
TO-251AA
16N03L
RFD16N03LSM
TO-252AA
16N03L
Absolute Maximum Ratings
T
C
= +25
o
C
RFD16N03L,
RFD16N03LSM
UNITS
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
30
V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
16
Refer to Peak Current Curve
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Refer to UIS Curve
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
0.606
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-55 to +175
o
C
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
File Number
4013.1
5-32
Specifications RFD16N03L, RFD16N03LSM
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V,
V
GS
= 0V
T
C
= +25
o
C
-
-
1
A
T
C
= +150
o
C
-
-
50
A
Gate-Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 16A, V
GS
= 5V
-
-
0.022
Turn-On Time
t
ON
V
DD
= 15V, I
D
= 16A,
R
L
= 0.93
, V
GS
= 5V,
R
GS
= 5
-
-
120
ns
Turn-On Delay Time
t
D(ON)
-
15
-
ns
Rise Time
t
R
-
95
-
ns
Turn-Off Delay Time
t
D(OFF)
-
25
-
ns
Fall Time
t
F
-
27
-
ns
Turn-Off Time
t
OFF
-
-
80
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0V to 10V
V
DD
= 24V,
I
D
= 16A,
R
L
= 1.5
-
50
60
nC
Gate Charge at 5V
Q
G(5)
V
GS
= 0V to 5V
-
30
36
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0V to 1V
-
1.5
1.8
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
1650
-
pF
Output Capacitance
C
OSS
-
575
-
pF
Reverse Transfer Capacitance
C
RSS
-
200
-
pF
Thermal Resistance Junction-to-Case
R
JC
-
-
1.65
o
C/W
Thermal Resistance Junction-to-Ambient
R
JA
TO-251 and TO-252
-
-
100
o
C/W
Source-Drain Diode Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 16A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 16A, dI
SD
/dt = 100A/
s
-
-
75
ns
5-33
RFD16N03L, RFD16N03LSM
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
, DRAIN CURRENT (A)
T
C
= +25
o
C
DC
100
s
1ms
10ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
V
DSS
MAX = 30V
100ms
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
P
DM
t
1
t
2
.01
.02
.05
0.1
0.2
0.5
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
JC
, NORMALIZED
THERMAL RESPONSE
10
-3
10
-2
10
-1
10
0
1
10
-5
10
-4
2
0.01
0.1
SINGLE PULSE
10
5
0
25
50
75
100
125
150
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
20
175
15
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
C
= +25
o
C
100
I
DM
, PEAK CURRENT CAP
ABILITY (A)
500
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE +25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
0
25
0
1.0
2.0
3.0
5.0
50
75
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
PULSE DURATION = 250
s, T
C
= +25
o
C
V
GS
= 4V
V
GS
= 10V
100
4.0
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
0
3.0
4.5
6.0
7.5
1.5
0
25
50
75
+175
o
C
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
-55
o
C
100
+25
o
C
5-34
RFD16N03L, RFD16N03LSM
FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 10. TYPICAL r
DS(ON)
FOR VARYING CONDITIONS OF
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 11. TYPICAL SWITCHING TIME AS A FUNCTION OF
GATE RESISTANCE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
BV
DSS
, NORMALIZED DRAIN-T
O-SOURCE
BREAKDOWN VOL
T
AGE
200
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
V
GS
= V
DS
, I
D
= 250
A
V
GS(TH)
, NORMALIZED GA
TE
THRESHOLD VOL
T
AGE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
I
D
= 16A
V
GS
= 5V,
PULSE DURATION = 250
s,
0.0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
r
DS(ON)
, NORMALIZED ON RESIST
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0
25
50
75
2.5
3.0
3.5
r
DS(ON)
, ON-ST
A
TE RESIST
ANCE (m
)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
4.0
100
I
D
= 16A
I
D
= 8A
I
D
= 32A
I
D
= 2A
4.5
T
J
= 25
o
C, PULSE DURATION = 250
s
5.0
V
DD
= 15V, I
DD
= 16A, R
L
= 0.93
0
50
100
150
200
0
10
20
30
40
SWITCHING TIME (ns)
R
GS
, GATE-TO-SOURCE RESISTANCE (
)
50
250
t
R
t
F
t
D(ON)
t
D(OFF)
24
18
12
6
0
5
3
2
1
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DS
, DRAIN-SOURCE VOL
T
AGE (V)
V
GS
, GA
TE-SOURCE VOL
T
AGE (V)
R
L
= 1.875
I
G(REF)
= 0.6mA
V
GS
= 5V
0.25 BV
DSS
4
0.75 BV
DSS
0.50 BV
DSS
30
I
G(REF)
I
G(ACT)
t, TIME (s)
20
I
G(REF)
I
G(ACT)
80
5-35
RFD16N03L, RFD16N03LSM
FIGURE 13. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 14. UNCLAMPED INDUCTIVE SWITCHING. REFER TO
HARRIS APPLICATION NOTES AN9321 AND
AN9322
FIGURE 15. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE
Typical Performance Curves
(Continued)
V
GS
= 0V, f = 1MHz
2500
500
0
0
5
10
15
20
25
C, CAP
ACIT
ANCE (pF)
1500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
2000
1000
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
=(L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= +25
o
C
STARTING T
J
= +150
o
C
100
1
100
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIP
A
TION MUL
TIPLIER
0.0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150