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Электронный компонент: RFP70N06

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CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1995
3-51
S E M I C O N D U C T O R
RFG70N06, RFP70N06,
RF1S70N06, RF1S70N06SM
70A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
Features
70A, 60V
r
DS(on)
= 0.014
Temperature Compensated PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve (Single Pulse)
+175
o
C Operating Temperature
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli-
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49007.
Symbol
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06
TO-262AA
F1S70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
G
D
S
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM
UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
70
Refer to Peak Current Curve
A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation
T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.0
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-55 to +175
o
C
December 1995
File Number
3206.3
3-52
Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V,
V
GS
= 0V
T
C
= +25
o
C
-
-
1
A
T
C
= +150
o
C
-
-
50
A
Gate-Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 70A, V
GS
= 10V
-
-
0.014
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 70A
R
L
= 0.43
, V
GS
= +10V
R
GS
= 2.5
-
-
125
ns
Turn-On Delay Time
t
D(ON)
-
12
-
ns
Rise Time
t
R
-
50
-
ns
Turn-Off Delay Time
t
D(OFF)
-
40
-
ns
Fall Time
t
F
-
15
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0V to 20V
V
DD
= 48V,
I
D
= 70A,
R
L
= 0.68
-
185
215
nC
Gate Charge at 10V
Q
G(10)
V
GS
= 0V to 10V
-
100
115
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0V to 2V
-
5.5
6.5
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
3000
-
pF
Output Capacitance
C
OSS
-
900
-
pF
Reverse Transfer Capacitance
C
RSS
-
300
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
1.0
o
C/W
Thermal Resistance Junction to Ambient
R
JA
-
-
80
o
C/W
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 70A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 70A, dI
SD
/dt = 100A/
s
-
-
125
ns
3-53
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
C
= +25
o
C
100
10
1
1
10
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = 60V
100
s
1ms
10ms
100ms
DC
500
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL RESPONSE
Z
JC
, NORMALIZED
P
DM
t
1
t
2
SINGLE PULSE
30
10
0
25
50
75
100
125
150
50
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
70
175
40
20
60
80
t, PULSE WIDTH (s)
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
C
= +25
o
C
100
I
DM
, PEAK CURRENT CAP
ABILITY (A)
1000
FOR TEMPERATURES
ABOVE +25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
I
I
25
175
T
C
150
-----------------------
=
0
80
0
1.0
2.0
3.0
5.0
120
160
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
PULSE DURATION = 250
s, T
C
= +25
o
C
V
GS
= 7V
V
GS
= 10V
200
4.0
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 20V
V
GS
= 8V
40
0
4.0
6.0
8.0
10.0
2.0
0
40
80
120
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
160
-55
o
C
+25
o
C
200
+175
o
C
3-54
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
I
D
= 70A
V
GS
= 10V,
PULSE DURATION = 250
s,
0.0
0.5
1.0
1.5
-80
-40
0
40
80
120
160
r
DS(ON)
, NORMALIZED ON RESIST
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.0
2.5
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
V
GS
= V
DS
, I
D
= 250
A
V
GS(TH)
, NORMALIZED GA
TE
THRESHOLD VOL
T
AGE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
BV
DSS
, NORMALIZED DRAIN-T
O-SOURCE
BREAKDOWN VOL
T
AGE
200
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIP
A
TION MUL
TIPLIER
0.0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
V
GS
= 0V, FREQUENCY (f) = 1MHz
5000
1000
0
0
5
10
15
20
25
C, CAP
ACIT
ANCE (pF)
4000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
3000
2000
45
30
15
0
20
I
G REF
(
)
I
G ACT
(
)
---------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
---------------------
10
5.0
2.5
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DS
, DRAIN-SOURCE VOL
T
AGE (V)
V
GS
, GA
TE-SOURCE VOL
T
AGE (V)
R
L
= 0.86
I
G(REF)
= 2.2mA
V
GS
= 10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
60
7.5
3-55
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
0.01
0.1
100
300
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= +25
o
C
STARTING T
J
= +150
o
C
1
10
t
P
V
GS
0.01
L
I
L
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
V
DS
V
GS
0V
R
GS
DUT
R
L
t
ON
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS