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2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
August 2005
RMPA1852 Rev. C
RMP
A1852 Quad-Band GSM/EDGE P
A
Module
ADVANCED DATA SHEET
RMPA1852
Quad-Band GSM/EDGE PA Module
Features
Quad band, GSM/EDGE PA module
7.0 x 7.0 mm x 1.3 mm Package Size
GSM Integrated Power Control Solution
GSM High Efficiency 55% GSM, 50% DCS/PCS
EDGE mode 29 dBm Output Power, 27% EDGE PAE
Low current consumption for Pout<16 dBm in EDGE mode
Shutdown/Standby Capability for Battery Operation
50
RF Inputs and Outputs
Description
This 7 x 7mm PAM is a 50
, quad-band dual mode, GSM/
EDGE PA module for 2.75G radio applications. In EDGE mode,
the module supports High/Low power mode feature to maximize
efficiency in low power operation. The module provides 50
input and output terminals. The module also includes closed
loop power control circuitry for GSM applications, minimizing
the required external components and maximizing board yields.
Packaging
Pin 1 Location
7.00 Typ.
7.00 Typ.
1.30
1.30
7.00
7.00
0.10
0.10
0.60
0.60
1.10
1.10
0.50
1.25
0.75
0.75
0.25
0.50
Typ.
GND
HB RF OUT
HB VCC3
V_DET
LB VCC3
GND
LB RF OUT
HB RF IN
BAND SEL
TX EN
VBATT
VMODE
VRAMP
LB RF IN
Package Footprint
(top view through package)
1
2
3
4
5
6
7
8
9
10
Pin 1
1.25
0.25
0.50
0.50
11
Top View Through Package
7.0 mm x 7.0 mm
Side View
12
13
14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
2
www.fairchildsemi.com
RMPA1852 Rev. C
RMP
A1852 Quad-Band GSM/EDGE P
A
Module
ADVANCED DATA SHEET
Absolute Maximum Ratings
Operating Parameters
Parameter
Value
Units
Supply Voltage (Vcc)
6
V
Input Power
12
dBm
Control Voltage (Vramp)
3.0
V
TX EN
3.0
V
BAND SEL
3.0
V
Duty Cycle at Max Power
50
%
Operating Temperature
-30 to +85
C
Storage Temperature
-55 to +150
C
Junction Temperature
150
C
Parameter
Test Conditions
Min
Typ
Max
Unit
Supply Voltage
VBATT and VCC
3.0
3.5
5.2
V
Supply Current
VBATT and VCC, Tx Enable Low
20
A
Control Voltage Vramp "ON" -- GSM Mode
For Pout max, 5A max.
1.6
1.8
V
Control Voltage Vramp "OFF" -- GSM Mode
For Pout min, 5A max.
0.2
V
Control Voltage Vramp in EDGE Mode
1.6
V
Band Select Low
GSM850/GSM900
0
0.8
V
Band Select High
DCS/PCS
2.5
3.0
V
VMODE Select Low
GSM Mode ON
0
0.3
V
VMODE Select High
EDGE Mode ON
2.5
3.0
V
Band Select Current
20
50
A
Tx Enable Low
PA Off
0
0.8
V
Tx Enable High
PA On
2.5
3.0
V
Tx Enable Current
20
A
3
www.fairchildsemi.com
RMPA1852 Rev. C
RMP
A1852 Quad-Band GSM/EDGE P
A
Module
ADVANCED DATA SHEET
Electrical Specifications
Mode:
GMSK
Band:
CEL Tx band (824849 MHz)
Modulation:
None (CW), Typical Peak/Average = 0dB
Pulse Rate:
TX = 577s, 25% duty cycle, Tframe = 4.615mS
Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50
, Pin = 3 dBm, Temperature = 25C,
Duty Cycle = 25%
Mode:
EDGE
Band:
GSM850 Tx band (824849 MHz)
Modulation:
EDGE modulation (3
/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%).
Pulse Rate:
TX = 577s, 25% duty cycle, Tframe = 4.615mS
Input Power:
Adjust to meet Output Power Requirement
Parameter
Test Conditions
Min
Typ
Max
Unit
Frequency
824
849
MHz
Output Power
Temp = 25C, Vcc = 3.5 V
34.5
35
dBm
Temp = 85C, Vcc = 2.9 V
32.5
Input Power Range
0
+3
+6
dBm
Power Added Efficiency
At Pout max
50
55
%
Input VSWR
Pout = 0 to 35 dBm
2.5:1
Ratio
Forward Isolation
Pin = 6 dBm
-35
dBm
Power Control Range
Vramp = 0.2 to 1.8 V
40
dB
Harmonics
-5
dBm
Cross Band Isolation @ 2fo
Measured at DCS/PCS output.
-20
dBm
Stability
Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp
where Pout less than or equal to 34 dBm into a 50
load.
-36
dBm
Noise Power
Ftx = 824849, Frx = 869894 MHz (RBW = 100 KHz)
-83
dBm
Ruggedness
VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3
dBm, Set Vramp where Pout less than or equal to 34.5
dBm into a 50
load.
No Damage
Output Power Switching Speed
RF Pout 535 dBm to within 1 dB of final value.
2
S
Parameter
Test Conditions
Min
Typ
Max
Unit
Duty Cycle
1/8
1/4
1/4
Output Power, Pout (H)
Max Pi = -0.5 (Temp = 25C, Vcc = 3.5 V)
29.0
dBm
Power Added Efficiency
at Pout (H), (Temp = 25C, Vcc = 3.5 V)
27
%
Low power current
consumption mode (L)
Pout<16 dBm
200
mA
Gain
at Pout (H)
36
dB
at Low power current consumption mode (L)
25
Input VSWR
2.0:1
Ratio
Harmonics 2Fo Thru 5Fo
At Max Po (Temp = 25C, Vcc = 3.5 V)
-5
dBm
Ruggedness
VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8
No Damage
Stability
All Spurious (Load VSWR = 6:1 at all angles Po < 29,
Pin < 8 dBm)
-65
dBc
TX Noise in RX Band
Ftx = 824849, Frx = 869894 MHz (RBW = 100 KHz)
-83
dBm
Adjacent Channel Leakage
Offset : 200 KHz
-33
dBc
Offset : 400 KHz
-57
Offset: 600 KHz
-60
Error Vector Magnitude
Load 50
4
%
4
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RMPA1852 Rev. C
RMP
A1852 Quad-Band GSM/EDGE P
A
Module
ADVANCED DATA SHEET
Electrical Specifications (Continued)
Mode:
GMSK
Band:
EGSM Tx band (880915 MHz)
Modulation:
None (CW), Typical Peak/Average = 0dB
Pulse Rate:
TX = 577s, 25% duty cycle, Tframe = 4.615mS
Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50
, Pin = 3 dBm, Temperature = 25C,
Duty Cycle = 25%
Mode:
EDGE
Band:
GSM900 Tx band (880915 MHz)
Modulation:
EDGE modulation (3
/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%).
Pulse Rate:
TX = 577s, 25% duty cycle, Tframe = 4.615mS
Input Power:
Adjust to meet Output Power Requirement
Parameter
Test Conditions
Min
Typ
Max
Unit
Frequency
880
915
MHz
Output Power
Temp = 25C, Vcc = 3.5 V
34.5
35
dBm
Temp = 85C, Vcc = 2.9 V
32.5
Input Power Range
0
+3
+6
dBm
Power Added Efficiency
At Pout max
50
55
%
Input VSWR
Pout = 0 to 35 dBm
2.5:1
Ratio
Forward Isolation
Pin = 6 dBm
-35
dBm
Power Control Range
Vramp = 0.2 to 1.8V
40
dB
Harmonics
-5
dBm
Cross Band Isolation @ 2fo
Measured at DCS/PCS output.
-20
dBm
Stability
Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where
Pout less than or equal to 34 dBm into a 50
load.
-36
dBm
Noise Power
Ftx = 890915, Frx = 935960 MHz (RBW = 100 KHz)
-83
dBm
Ftx = 880890, Frx = 925935 MHz (RBW = 100 KHz)
-73
Ruggedness
VSWR = 10:1, All phase angles, Vcc = 4.8 V,
Pin = 3 dBm, Set Vramp where Pout less than or equal to
34.5 dBm into a 50
load.
No Damage
Output Power Switching Speed
RF Pout 535 dBm to within 1 dB of final value.
2
S
Parameter
Test Conditions
Min
Typ
Max
Unit
Duty Cycle
1/8
1/4
1/4
Output Power
Max Pi = -0.5 (Temp = 25C, Vcc = 3.5 V)
29.0
dBm
Power Added Efficiency
(Temp = 25C, Vcc = 3.5 V)
27
%
Low power current
consumption mode (L)
Pout<16 dBm
200
mA
Gain
at Pout (H)
36
dB
at Low power current consumption mode (L)
25
Input VSWR
2.0:1
Ratio
Harmonics 2Fo Thru 5Fo
At Max Po (Temp = 25C, Vcc = 3.5 V)
-5
dBm
Ruggedness
VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8
No Damage
Stability
All Spurious (Load VSWR = 6:1 at all angles
Po < 29, Pin < 8 dBm)
-65
dBc
TX Noise in RX Band
Ftx = 890915, Frx = 935960 MHz
-83
dBm
Ftx = 880890, Frx = 925935 MHz (RBW = 100 KHz)
-73
Adjacent Channel Leakage
Offset: 200 KHz
-33
dBc
Offset: 400 KHz
-57
Offset: 600 KHz
-60
Error Vector Magnitude
Load 50
4
%
5
www.fairchildsemi.com
RMPA1852 Rev. C
RMP
A1852 Quad-Band GSM/EDGE P
A
Module
ADVANCED DATA SHEET
Electrical Specifications (Continued)
Mode:
GMSK
Band:
DCS Tx band (17101785 MHz)
Modulation:
None (CW), Typical Peak/Average = 0dB
Pulse Rate:
TX = 577s, 25% duty cycle, Tframe = 4.615mS
Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50
, Pin = 3 dBm, Temperature = 25C,
Duty Cycle = 25%
Mode:
EDGE
Band:
DCS Tx band (17101785 MHz)
Modulation:
EDGE modulation (3
/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%).
Pulse Rate:
TX = 577s, 25% duty cycle, Tframe = 4.615mS
Input Power:
Adjust to meet Output Power Requirement
Parameter
Test Conditions
Min
Typ
Max
Unit
Frequency
DCS
1710
1785
MHz
Output Power
Temp = 25C, Vcc = 3.5 V
32
33
dBm
Temp = 85C, Vcc = 2.9 V
29.5
Input Power Range
+0
+3
+6
dBm
Power Added Efficiency
At Pout max
45
50
%
Input VSWR
Pout = 0 to 35 dBm
2.5:1
Ratio
Forward Isolation
Pin = 6 dBm
-35
dBm
Power Control Range
Vramp = 0.2 to 1.8 V
40
dB
Harmonics
-5
dBm
Stability
Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp
where Pout less than or equal to 32 dBm into a 50
load.
-36
dBm
Noise Power
Ftx = 17101785, Frx = 18051880 MHz
(RBW = 100 KHz)
-77
dBm
Ruggedness
Output VSWR = 10:1, All phase angles, Vcc = 4.8 V,
Pin = 3 dBm, Set Vramp where Pout less than or equal to
32 dBm into a 50
load.
No Damage
Output Power Switching
Speed
RF Pout 535 dBm to within 1 dB of final value.
2
S
Parameter
Test Conditions
Min
Typ
Max
Unit
Duty Cycle
1/8
1/4
1/4
Output Power
Max Pi = -0.5 (Temp = 25C, Vcc = 3.5 V)
28
dBm
Power Added Efficiency
(Temp = 25C, Vcc = 3.5 V)
26
%
Low power current
consumption mode (L)
Pout<16 dBm
200
mA
Gain
at Pout (H)
34
dB
at Low power current consumption mode (L)
25
Input VSWR
2.0:1
Ratio
Harmonics 2Fo Thru 5Fo
At Max Po (Temp = 25C, Vcc = 3.5 V)
-10
dBm
Ruggedness
VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8
No Damage
Stability
All Spurious (Load VSWR = 6:1 at all angles
Po < 28, Pin < 8 dBm)
-65
dBc
TX Noise in RX Band
Ftx = 17101785, Frx = 18051880 MHz (RBW = 100 KHz)
-77
dBm
Adjacent Channel Leakage
Offset: 200 KHz
-33
dBc
Offset: 400 KHz
-57
Offset: 600 KHz
-60
Error Vector Magnitude
Load 50
4
%
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