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2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
IGBT
S
G
H20N60RUF
D
SGH20N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10us @ T
C
= 100
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 20A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 50ns (typ.)
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGH20N60RUFD
Units
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 25
C
32
A
Collector Current
@ T
C
= 100
C
20
A
I
CM (1)
Pulsed Collector Current
60
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
C
25
A
I
FM
Diode Maximum Forward Current
220
A
T
SC
Short Circuit Withstand Time
@ T
C
= 100
C
10
us
P
D
Maximum Power Dissipation
@ T
C
= 25
C
195
W
Maximum Power Dissipation
@ T
C
= 100
C
75
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Thermal Resistance, Junction-to-Case
--
0.64
C
/
W
R
JC
(DIODE)
Thermal Resistance, Junction-to-Case
--
0.83
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G C E
TO-3P
G
C
E
G
C
E
SGH20N60RUFD Rev. B1
S
G
H20N60RUF
D
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
600
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
uA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 20mA, V
CE
= V
GE
5.0
6.0
8.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 20A
,
V
GE
= 15V
--
2.2
2.8
V
I
C
= 32A
,
V
GE
= 15V
--
2.5
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
1323
--
pF
C
oes
Output Capacitance
--
254
--
pF
C
res
Reverse Transfer Capacitance
--
47
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 20A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
30
--
ns
t
r
Rise Time
--
49
--
ns
t
d(off)
Turn-Off Delay Time
--
48
70
ns
t
f
Fall Time
--
152
200
ns
E
on
Turn-On Switching Loss
--
524
--
uJ
E
off
Turn-Off Switching Loss
--
473
--
uJ
E
ts
Total
Switching
Loss
--
997
1400
uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 20A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 125
C
--
30
--
ns
t
r
Rise Time
--
51
--
ns
t
d(off)
Turn-Off Delay Time
--
52
75
ns
t
f
Fall Time
--
311
400
ns
E
on
Turn-On Switching Loss
--
568
--
uJ
E
off
Turn-Off Switching Loss
--
1031
--
uJ
E
ts
Total
Switching
Loss
--
1599
2240
uJ
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
C
10
--
--
us
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 20A,
V
GE
= 15V
--
55
80
nC
Q
ge
Gate-Emitter Charge
--
10
15
nC
Q
gc
Gate-Collector Charge
--
25
40
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
14
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 25A
T
C
= 25
C
--
1.4
1.7
V
T
C
= 100
C
--
1.3
--
t
rr
Diode Reverse Recovery Time
I
F
= 25A,
di/dt = 200 A/us
T
C
= 25
C
--
50
95
ns
T
C
= 100
C
--
105
--
I
rr
Diode Peak Reverse Recovery
Current
T
C
= 25
C
--
4.5
10
A
T
C
= 100
C
--
8.5
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
--
112
375
nC
T
C
= 100
C
--
420
--
SGH20N60RUFD Rev. B1
S
G
H20N60RUF
D
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
10
20
30
40
50
60
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
o
l
l
e
ct
o
r
C
u
rr
e
n
t,
I
C
[A]
Collector - Emitter Voltage, V
CE
[V]
1
10
0
10
20
30
40
50
60
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
------
Col
l
e
ct
o
r
Cu
r
r
en
t
,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
0
1
2
3
4
5
20A
40A
30A
I
C
= 10A
Common Emitter
V
GE
= 15V
C
o
l
l
e
c
t
or
-
Em
i
t
t
e
r
Vo
l
t
ag
e,
V
CE
[V
]
Case Temperature, T
C
[
]
0
4
8
12
16
20
24
28
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 32W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
Lo
ad
C
u
r
r
ent [
A
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
40A
20A
I
C
= 10A
Col
l
ec
to
r - Em
i
t
t
e
r
V
o
l
t
ag
e,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
40A
20A
I
C
= 10A
C
o
lle
c
t
o
r
-
E
m
it
te
r
V
o
lta
g
e
,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
SGH20N60RUFD Rev. B1
S
G
H20N60RUF
D
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
400
800
1200
1600
2000
2400
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
a
pa
ci
ta
nce
[
p
F
]
Collector - Emitter Voltage, V
CE
[V]
1
10
100
10
100
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 20A
T
C
= 25
T
C
= 125
------
Ton
Tr
S
w
it
c
h
in
g
T
i
m
e
[
n
s
]
Gate Resistance, R
G
[
]
1
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 20A
T
C
= 25
T
C
= 125
------
Sw
i
t
ch
i
n
g
T
i
m
e
[
n
s]
Gate Resistance, R
G
[
]
1
10
100
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 20A
T
C
= 25
T
C
= 125
------
S
w
i
t
c
h
i
n
g
L
o
ss
[u
J]
Gate Resistance, R
G
[
]
10
15
20
25
30
35
40
10
100
Ton
Tr
Common Emitter
V
GE
=
15V, R
G
= 10
T
C
= 25
T
C
= 125
------
S
w
it
c
h
in
g
T
i
m
e
[
n
s
]
Collector Current, I
C
[A]
10
15
20
25
30
35
40
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
15V, R
G
= 10
T
C
= 25
T
C
= 125
------
S
w
i
t
ch
i
n
g
T
i
m
e
[
n
s]
Collector Current, I
C
[A]
SGH20N60RUFD Rev. B1
S
G
H20N60RUF
D
2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
0.3
1
10
100
1000
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
50
100
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
o
l
l
e
c
to
r
C
u
r
r
e
n
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
C
o
lle
c
t
o
r
C
u
r
r
e
n
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
l Resp
on
se, Zth
jc [
/W
]
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
10
15
20
25
30
35
40
100
1000
Eoff
Eon
Eoff
Common Emitter
V
GE
=
15V, R
G
= 10
T
C
= 25
T
C
= 125
------
S
w
it
c
h
in
g
L
o
s
s
[
u
J
]
Collector Current, I
C
[A]
0
10
20
30
40
50
60
0
3
6
9
12
15
300 V
200 V
V
CC
= 100 V
Common Emitter
R
L
= 15
T
C
= 25
G
a
te -
Em
i
tter
Vol
t
age
, V
GE
[ V
]
Gate Charge, Q
g
[ nC ]
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