2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
IGBT
S
G
H80N60UFD
SGH80N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 40A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 50ns (typ.)
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGH80N60UFD
Units
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 25
C
80
A
Collector Current
@ T
C
= 100
C
40
A
I
CM (1)
Pulsed Collector Current
220
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
C
25
A
I
FM
Diode Maximum Forward Current
280
A
P
D
Maximum Power Dissipation
@ T
C
= 25
C
195
W
Maximum Power Dissipation
@ T
C
= 100
C
78
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for Soldering
Purposes,/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Thermal Resistance, Junction-to-Case
--
0.64
C
/
W
R
JC
(DIODE)
Thermal Resistance, Junction-to-Case
--
0.83
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G C E
TO-3P
G
C
E
G
C
E
SGH80N60UFD Rev. B1
S
G
H80N60UFD
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
600
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
uA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 40mA, V
CE
= V
GE
3.5
4.5
6.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 40A
,
V
GE
= 15V
--
2.1
2.6
V
I
C
= 80A
,
V
GE
= 15V
--
2.6
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
2790
--
pF
C
oes
Output Capacitance
--
350
--
pF
C
res
Reverse Transfer Capacitance
--
100
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 40A,
R
G
= 5
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
23
--
ns
t
r
Rise Time
--
50
--
ns
t
d(off)
Turn-Off Delay Time
--
90
130
ns
t
f
Fall Time
--
50
150
ns
E
on
Turn-On Switching Loss
--
570
--
uJ
E
off
Turn-Off Switching Loss
--
590
--
uJ
E
ts
Total
Switching
Loss
--
1160
1500
uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 40A,
R
G
= 5
, V
GE
= 15V
,
Inductive Load, T
C
= 125
C
--
30
--
ns
t
r
Rise Time
--
55
--
ns
t
d(off)
Turn-Off Delay Time
--
150
200
ns
t
f
Fall Time
--
160
250
ns
E
on
Turn
-
On Switching Loss
--
630
--
uJ
E
off
Turn
-
Off Switching Loss
--
940
--
uJ
E
ts
Total
Switching
Loss
--
1580
2000
uJ
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 40A,
V
GE
= 15V
--
175
250
nC
Q
ge
Gate-Emitter Charge
--
25
40
nC
Q
gc
Gate-Collector Charge
--
60
90
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
14
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 25A
T
C
= 25
C
--
1.4
1.7
V
T
C
= 100
C
--
1.3
--
t
rr
Diode Reverse Recovery Time
I
F
= 25A,
di/dt = 200A/us
T
C
= 25
C
--
50
95
ns
T
C
= 100
C
--
105
--
I
rr
Diode Peak Reverse Recovery
Current
T
C
= 25
C
--
4.5
10
A
T
C
= 100
C
--
8.5
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
--
112
375
nC
T
C
= 100
C
--
420
--
SGH80N60UFD Rev. B1
S
G
H80N60UFD
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
10
20
30
40
50
60
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 60W
V
CC
= 300V
Load Current : peak of square wave
Frequency [Khz]
Lo
ad
Current [A
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
80A
40A
I
C
= 20A
C
o
lle
c
t
o
r
-
E
m
itt
e
r
V
o
lta
g
e
,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
80A
40A
I
C
= 20A
C
o
lle
c
t
o
r
-
E
m
it
te
r V
o
lta
g
e
,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
30
60
90
120
150
0
1
2
3
4
Common Emitter
V
GE
= 15V
80A
40A
I
C
= 20A
C
o
ll
e
c
to
r -
E
m
i
tte
r V
o
l
t
a
g
e
,
V
CE
[V
]
Case Temperature, T
C
[
]
0.5
1
10
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
C
o
lle
c
t
o
r
C
u
rre
n
t,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
0
2
4
6
8
0
50
100
150
200
250
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
Col
l
e
ct
or
Cu
r
r
en
t
,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
SGH80N60UFD Rev. B1
S
G
H80N60UFD
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
30
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
a
pac
i
t
anc
e [pF
]
Collector - Emitter Voltage, V
CE
[V]
1
10
80
20
100
1000
2000
Toff
Tf
Tf
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 40A
T
C
= 25
T
C
= 125
S
w
itc
h
in
g
T
i
m
e
[n
s
]
Gate Resistance, R
G
[
]
1
10
70
20
100
500
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 40A
T
C
= 25
T
C
= 125
Ton
Tr
S
w
i
t
chin
g T
i
m
e
[n
s
]
Gate Resistance, R
G
[
]
1
10
80
100
1000
5000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 40A
T
C
= 25
T
C
= 125
S
w
itc
h
in
g
L
o
s
s
[
u
J
]
Gate Resistance, R
G
[
]
10
20
30
40
50
60
70
80
10
100
500
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
15V
R
G
= 5
T
C
= 25
T
C
= 125
S
w
itc
h
in
g
T
i
m
e
[n
s
]
Collector Current, I
C
[A]
10
20
30
40
50
60
70
80
20
100
1000
2000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
15V
R
G
= 5
T
C
= 25
T
C
= 125
S
w
itc
h
in
g
T
i
m
e
[n
s
]
Collector Current, I
C
[A]
SGH80N60UFD Rev. B1
S
G
H80N60UFD
2002 Fairchild Semiconductor Corporation
0.3
1
10
100
1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
Col
l
ec
t
o
r
Cu
r
r
en
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
0
10
20
30
40
50
60
70
80
10
100
1000
3000
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
15V
R
G
= 5
T
C
= 25
T
C
= 125
S
w
i
t
c
h
i
ng Lo
s
s
[uJ]
Collector Current, I
C
[A]
0
30
60
90
120
150
180
0
3
6
9
12
15
300 V
200 V
V
CC
= 100 V
Common Emitter
R
L
= 7.5
T
C
= 25
G
a
te
-
E
m
itt
e
r
V
o
lta
g
e
,
V
GE
[ V
]
Gate Charge, Q
g
[ nC ]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
l
Resp
on
se, Z
t
h
j
c [
/W
]
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
1
10
100
1000
1
10
100
500
Safe Operating Area
V
GE
=20V, T
C
=100
o
C
C
o
l
l
ec
to
r C
u
rre
nt, I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
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