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2001 Fairchild Semiconductor Corporation
August 2001
SGR20N40L / SGU20N40L Rev. A1
IGBT
S
G
R20N40L /
SGU20N40L
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
High input impedance
High peak current capability (150A)
Easy gate drive
Surface Mount : SGR20N40L
Straight Lead : SGU20N40L
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1" square PCB (FR4 or G-10 Material)
Symbol
Description
SGR / SGU20N40L
Units
V
CES
Collector - Emitter Voltage
400
V
V
GES
Gate - Emitter Voltage
6
V
I
CM (1)
Pulsed Collector Current
150
A
P
C
Maximum Power Dissipation @ T
C
= 25
C
45
W
T
J
Operating Junction Temperature
-40 to +150
C
T
stg
Storage Temperature Range
-40 to +150
C
T
L
Maximum Lead Temp. for soldering
purposes, 1/8" from case for 5 seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case
--
3.0
C
/
W
R
JA
(D-PAK)
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
--
50
C
/
W
R
JA
(I-PAK)
Thermal Resistance, Junction-to-Ambient
--
110
C
/
W
Application
Strobe flash.
G
C
E
G
C
E
D-PAK
G E
C
I-PAK
G
E
C
2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
S
G
R20N40L /
SGU20N40L
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
* Notes : Recommendation of R
G
Value : R
G
15
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 1mA
450
--
--
V
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
10
A
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
0.1
A
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 1mA, V
CE
= V
GE
0.5
1.0
1.4
V
V
CE(sat)
C-E Saturation Current
I
C
= 150A, V
GE
= 4.5V
2.0
4.5
8.0
V
Dynamic Characteristics
C
ies
Input Capacitance
V
GE
= 0V, V
CE
= 30V,
f = 1MHz
--
3800
--
pF
C
oes
Output Capacitance
--
50
--
pF
C
res
Reverse Transfer Capacitance
--
35
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300V, I
C
= 150A,
V
GE
= 4.5V, R
G
= 15
*
Resistive Load
--
0.2
--
s
t
r
Rise Time
--
1.7
--
s
t
d(off)
Turn-Off Delay Time
--
0.3
0.5
s
t
f
Fall Time
--
1.5
2.0
s
2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
S
G
R20N40L /
SGU20N40L
Fig 1. Typical Output Characteristics
Fig 2. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 3. Saturation Voltage vs. V
GE
Fig 4. Saturation Voltage vs. V
GE
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Capacitance Characteristics
0
2
4
6
8
0
50
100
150
200
Common Emitter
T
C
= 25
5.0V
4.5V
4.0V
3.5V
3.0V
V
GE
= 2.5V
Co
llector Curren
t, I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
-50
0
50
100
150
2
3
4
5
6
7
Common Emitter
V
GE
= 4.5V
150A
100A
I
C
= 70A
Collector
-Em
i
tter Voltag
e, V
CE
[v
]
Case Temperature, T
C
[
]
0
1
2
3
4
5
6
0
4
8
12
16
20
I
C
= 70A
100A
150A
Common Emitter
T
C
= -40
Coll
ector-Em
i
t
t
er Voltag
e
,
V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0
1
2
3
4
5
6
0
4
8
12
16
20
150A
100A
I
C
= 70A
Common Emitter
T
C
= 25
G
a
te-Em
i
tter Voltag
e, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
0
1
2
3
4
5
6
0
4
8
12
16
20
I
C
= 70A
100A
150A
Common Emitter
T
C
= 125
Col
l
ector-Emitter Volt
ag
e, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0
10
20
30
40
10
100
1000
10000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
Cres
Coes
Cies
Cap
a
citan
ce [p
F]
Collector-Emitter Voltage, V
CE
[V]
2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
S
G
R20N40L /
SGU20N40L
Fig 7. Turn-On Characteristics vs.
Gate Resistance
Fig 8. Collector Current Limit vs.
Gate - Emitter Voltage Limit
0
10
20
30
40
50
60
0
2
4
6
Common Emitter
V
CC
= 300V, R
L
= 2
T
C
= 25
G
a
te
- E
m
i
t
t
e
r V
o
l
t
a
g
e
,
V
GE
[V
]
Gate-Charge, Q
g
[nC]
0
2
4
6
8
10
0
25
50
75
100
125
150
175
200
Collector P
eak
Cu
rren
t, I
CP
[A]
Gate - Emitter Voltage, V
GE
[V]
2001 Fairchild Semiconductor Corporation
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Rev. H3
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