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2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
IGBT
S
G
R15N40L /
SGU15N40L
SGR15N40L / SGU15N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
High input impedance
High peak current capability (130A)
Easy gate drive
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1" square PCB (FR4 or G-10 Material)
Symbol
Description
SGR / SGU15N40L
Units
V
CES
Collector - Emitter Voltage
400
V
V
GES
Gate - Emitter Voltage
6
V
I
CM (1)
Pulsed Collector Current
130
A
P
C
Maximum Power Dissipation @ T
C
= 25
C
45
W
T
J
Operating Junction Temperature
-40 to +150
C
T
stg
Storage Temperature Range
-40 to +150
C
T
L
Maximum Lead Temp. for soldering
purposes, 1/8" from case for 5 seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case
--
3.0
C
/
W
R
JA
(D-PAK)
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
--
50
C
/
W
R
JA
(I-PAK)
Thermal Resistance, Junction-to-Ambient
--
110
C
/
W
Application
Strobe flash.
G
C
E
G
C
E
D-PAK
G E
C
I-PAK
G
E
C
SGR15N40L / SGU15N40L Rev. A1
S
G
R15N40L /
SGU15N40L
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
* Notes : Recommendation of R
G
Value : R
G
15
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 1mA
450
--
--
V
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
10
uA
I
GES
G - E Leakage Voltage
V
GE
= V
GES
, V
CE
= 0V
--
--
0.1
uA
On Characteristics
V
GE(th)
G - E Threshold Voltage
I
C
= 1mA, V
CE
= V
GE
0.5
1.0
1.4
V
V
CE(sat)
C - E Saturation Current
I
C
= 130A, V
GE
= 4.5V
2.0
4.5
8.0
V
Dynamic Characteristics
C
ies
Input Capacitance
V
GE
= 0V, V
CE
= 30V,
f = 1MHz
--
3000
--
pF
C
oes
Output Capacitance
--
45
--
pF
C
res
Reverse Transfer Capacitance
--
30
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300V, I
C
= 130A,
V
GE
= 4.5V, R
G
= 15
Resistive Load
--
0.08
--
us
t
r
Rise Time
--
1.4
--
us
t
d(off)
Turn-Off Delay Time
--
0.1
0.5
us
t
f
Fall Time
--
1.1
2.0
us
SGR15N40L / SGU15N40L Rev. A1
S
G
R15N40L /
SGU15N40L
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Saturation Voltage vs. Case Temperature
at Variant Current Level
Fig 3. Saturation Voltage vs. V
GE
Fig 4. Saturation Voltage vs. V
GE
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Capacitance Characteristics
0
2
4
6
8
0
30
60
90
120
150
180
4V
4.5V
3V
3.5V
5V
V
GE
= 2.5V
Commom Emitter
T
C
= 25
C
o
llec
t
or C
u
rrent, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
-50
0
50
100
150
2
3
4
5
6
7
Common Emitter
V
GE
= 4.5V
130A
100A
I
C
= 70A
Collector-Em
i
tter Voltag
e, V
CE
[V]
Case Temperature, T
C
[
]
0
1
2
3
4
5
6
0
2
4
6
8
10
130A
100A
I
C
= 70A
Common Emitter
T
C
= -40
C
o
llecto
r-Em
i
tter Vo
ltag
e,
V
CE
[V
]
Gate-Emitter Voltage , V
GE
[V]
0
1
2
3
4
5
6
0
2
4
6
8
10
Common Emitter
T
C
= 25
130A
100A
I
C
= 70A
Collector-Em
i
tter Voltag
e, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0
1
2
3
4
5
6
0
2
4
6
8
10
130A
100A
I
C
= 70A
Common Emitter
T
C
= 125
Co
llector-E
m
i
tter V
o
ltag
e,
V
CE
[V
]
Gate-Emitter Voltage, V
GE
[V]
0
10
20
30
40
10
100
1000
10000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
Cres
Coes
Cies
Ca
p
a
citan
ce [p
F]
Collector-Emitter Voltage, V
CE
[V]
SGR15N40L / SGU15N40L Rev. A1
S
G
R15N40L /
SGU15N40L
2002 Fairchild Semiconductor Corporation
Fig 7. Gate Charge Characteristics
Fig 8. Collector Current Limit vs.
Gate - Emitter Voltage Limit
0
10
20
30
40
50
60
0
2
4
6
Common Emitter
V
CC
= 300V, R
L
= 2.2
T
C
= 25
G
a
te - E
m
itter V
o
ltag
e, V
GE
[V
]
Gate Charge, Q
g
[nC]
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
180
200
Collector Peak
C
u
rren
t, I
CP
[A]
Gate-Emitter Voltage, V
GE
[V]
2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
S
G
R15N40L /
SGU15N40L
Package Dimension
6.60
0.20
2.30
0.10
0.50
0.10
5.34
0.30
0.70
0.20
0.60
0.20
0.80
0.20
9.50
0.30
6.10
0.20
2.70
0.20
9.50
0.30
6.10
0.20
2.70
0.20
MIN0.55
0.76
0.10
0.50
0.10
1.02
0.20
2.30
0.20
6.60
0.20
0.76
0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89
0.10
(0.10)
(3.05)
(1.00)
(0.90)
(0.70)
0.91
0.10
2.30TYP
[2.30
0.20]
2.30TYP
[2.30
0.20]
MAX0.96
(4.34)
(0.50)
(0.50)
D-PAK
Dimensions in Millimeters
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