Advanced Product Information
1.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2020
GaAs Multi-Purpose Wide Band SPDT Switch
Features:
Available in die form
Suitable for L and S-band digital
cellular, cordless telephony and WLAN
applications
High isolation, 30dB typ at 2.5GHz
Low insertion loss, 0.4dB typ at 2.5GHz
P0.1dB > 35dBm
Functional Schematic
Description and Applications:
The FMS2020 is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna
switch. The die is fabricated using the Filtronic FL05 0.5
m switch process technology which offers
leading edge performance optimised for switch applications. The FMS2020 is designed for use in L
and S band wireless applications.
Electrical Specifications:
(T
AMBIENT
= 25C,V
control
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Insertion Loss
0.5 1.0 GHz
1.0 2.5 GHz
0.4
0.4
dB
dB
Return Loss
0.5 2.5 GHz
25
dB
Isolation
0.5 1.0 GHz
1.0 2.5 GHz
33
30
dB
dB
Input power at 0.1dB compression point
1GHz
36
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
dBc
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10%
RF
<0.3
<1.0
s
s
Control
Current
1 A
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
ANT
V1
RF1
V2
RF2
Advanced Product Information
1.1
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2020
Truth Table:
V1
V2
PATH (ON)
High Low
RF1-ANT
Low High
RF2-ANT
Note:
`High' = +2.5V to +5V
`Low' = 0V to 0.2V
Pad and Die Layout:
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (
m)
Die Thickness (
m)
Min. Bond Pad
Pitch(
m)
Min. Bond pad
opening (
m)
930 x 1020(engineering mask)
100
166
70 x 70
Pad
Pad
Name
Description
Pin Coordinates
(m)
A ANT
Antenna
732,
510
B RF1
RF1
Output
270,
920
C RF2
RF2 Output
280, 101
D
V1
RF1 Control Voltage
731, 918
E V2
RF2 Control Voltage
734, 98
F
GND T1
Ground 1
186, 885
G
GND T2
Ground 2
186, 420
A
B
G
F
E
D
C
Advanced Product Information
1.1
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2020
Simulated Performance:
Advanced Product Information
1.1
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2020
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150
C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4
m diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150
C and a bonding force of 40g has been shown to give effective
results for 25
m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200
C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
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