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Электронный компонент: 1N4448

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F
ORMOSA
MS
1N4148/1N4448
FORMOSA MS
1
High-speed switching diode
Features
1. High reliability
2. High speed (t
rr
=
4 ns)
Applications
Extreme fast switches
Construction
Silicon epitaxial planar

Absolute Maximum Ratings
T
j
=25
?
Parameter
Test Conditions
Type
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
100
V
Reverse voltage
V
R
75
V
Peak forward surge current
t
p
=1
s
I
FSM
2
A
Repetitive peak forward voltage
I
FRM
500
mA
Forward current
I
F
300
mA
Average forward current
V
R
=0
I
FAV
150
mA
Power dissipation
I=4mm T
L
=
25
?
P
V
500
mW
Junction temperature
T
j
175
?
Storage temperature range
T
stg
-65~+175
?
Maximum Thermal Resistance
T
j
=25
?
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
I=4mm T
L
=constant
R
thJA
350
K/W
F
ORMOSA
MS
1N4148/1N4448
FORMOSA MS
2
Electrical Characteristics
T
j
=25
?
Parameter
Test Conditions
Type
Symbol Min
Typ
Max
Unit
I
F
=5mA
1N4448
V
F
0.62
0.72
V
I
F
=10mA
1N4148
V
F
0.86
1
V
Forward voltage
I
F
=100mA
1N4448
V
F
0.93
1
V
V
R
=20V
I
R
25
nA
V
R
=20V, T
j
=150
?
I
R
50
A
Reverse current
V
R
=75V
I
R
5
A
Breakdown current
I
R
=100
A,t
p
/T=0.01,t
p
=0.3ms
V
(BR)
100
V
Diode capacitance
V
R
=0, f=1MHz, V
HF
=50mV
C
D
4
pF
Rectification efficiency
V
HF
=2V, f=100MHz
?
R
45
%
I
F
= I
R
=10mA, i
R
=1mA
t
rr
8
ns
Reverse recovery time
I
F
=10mA, V
R
=6V, i
R
=0.1
I
R
,
R
L
=100
O
t
rr
4
ns
Characteristics (T
j
=25
?
unless otherwise specified)
1N4148
1N4448
F
ORMOSA
MS
1N4148/1N4448
FORMOSA MS
3
Dimensions in mm

Standard Glass Case
JEDEC DO 35