Switching Diode
1N914
Silicon epitaxial planar type
Features
Low power loss, high efficiency
High reliability
High speed ( t
rr
< 4 ns )
Mechanical data
Case : Glass, DO-35
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.13 gram
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Non-Repetitive peak reverse voltage
V
RM
100
V
Reverse voltage
V
R
75
V
Peak forward surge current
t
p
= 1 us
I
FSM
1.0
A
Repetitive peak forward voltage
I
FRM
250
mA
Forward current
I
F
150
mA
Average forward current
V
R
= 0
I
FAV
75
mA
Power dissipation
P
V
250
mW
Junction temperature
T
j
175
o
C
Storage temperature
T
STG
-55
+175
o
C
Formosa MS
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
I
F
= 5mA
V
F
0.62
0.72
V
I
F
= 10mA
V
F
0.86
1.00
V
V
R
= 20V
I
R
25
nA
V
R
= 20V , T
j
= 150
o
C
I
R
50
uA
V
R
= 75V
I
R
5.0
uA
Breakdown current
I
R
= 100uA , T
P
/T = 0.01 T
P
= 0.3ms
V
(BR)
100
V
Diode capacitance
V
R
= 0 , f = 1MHz , V
HF
= 50mV
C
D
4.0
pF
Rectification efficiency
V
HF
= 2V , f = 100MHz
n
R
45
%
I
F
= I
R
= 10mA , I
RR
= 1mA
t
rr
8
ns
Reverse recovery time
I
F
=10mA, V
R
=6V, I
RR
= 0.1 X I
R
, R
L
=100
OHM
t
rr
4
ns
Forward voltage
Reverse current
DO-35
Dimensions in inches and (millimeters)
1.141(29.0)
1.102(28.0)
.169(4.30)
.146(3.70)
.022(.55)
.018(.45)
DIA.
.083(2.10)
.051(1.30)
DIA.
1.141(29.0)
1.102(28.0)
RATING AND CHARACTERISTIC CURVES (1N914)
10
100
1000
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
R
E
V
E
R
S
E
C
U
R
R
E
N
T
,
(
n
A
)
1 10 100
1
Tj=25 C
REVERSE VOLTAGE
1.0
10
0.1
100
1000
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
m
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0 .4 .8 1.2 1.6 2.0
Tj=25 C
FIG.2 - TYPICAL DIODE CAPACITANCE
REVERSE VOLTAGE,(V)
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.1 1 10
100 1000
Scattering Limit
Scattering Limit
FIG.4 - REVERSE CURRENT
VS JUNCTION TEMPERATURE
0
100
200
3
10
2
10
R
E
V
E
R
S
E
C
U
R
R
E
N
T
,
(
u
A
)
10
1
-1
10
-2
10
o
JUNCTION TEMPERATURE ( C)
V
=75
V / M
AX.
VA
LUE
S
R
V
=7
5V
/
TY
P. V
ALU
ES
R
V
=2
0V
/
TY
P. V
ALU
ES
R
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