Chip Silicon Rectifier
HFM201-L THRU HFM207-L
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gr am
(V)
(V)
(V)
(V)
(nS)
(
o
C)
HFM201-L
H21
50
35
50
HFM202-L
H22
100
70
100
HFM203-L
H23
200
140
200
HFM204-L
H24
400
280
400
1.3
HFM205-L
H25
600
420
600
HFM206-L
H26
800
560
800
HFM207-L
H27
1000
700
1000
-55 to +150
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
T
RR
*5
1.0
SYMBOLS
MARKING
CODE
50
1.7
75
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
Ambient temperature = 50
o
C
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
50
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
uA
V
R
= V
RRM
T
A
= 100
o
C
150
uA
Thermal resistance
Junction to ambient
Rq
JA
20
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
25
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-L
.4
.6
.8
1.0
1.2
1.4
.001
.01
.1
1.0
10
RATING AND CHARACTERISTIC CURVES (HFM201-L THRU HFM207-L)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
Tj=25 C
FIG.2-TYPICAL FORWARD CURRENT
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
0.4
0.8
1.2
1.6
2.0
2.4
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
P.C.B. MOUNTED ON
0.3" * 0.3" (8.0mm * 8.0mm)
COPPER PAD AREAS
DERATING CURVE
AMBIENT TEMPERATURE ( C)
1.6 1.8
H
FM
20
5-
L~
H
FM
20
7-
L
H
F
M
2
0
4
-L
H
F
M
2
0
1
-L
~
H
F
M
2
0
3
-L
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
175
120
100
80
60
40
20
0
.01 .05 .1 .5 1 5 10 50 100
0
25
50 75 100 125 150 175
0
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
0
20
30
40
50
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
,
(
A
)
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