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Электронный компонент: LL4150

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Formosa MS
LL4150
Formosa MS
1
High-speed switching diode
Features
1. Small surface mounting type
2. High reliability
3. High forward current capability
Applications
High speed switch and general purpose use in computer and industrial applications
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25
?
Parameter
Test Conditions
Type
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
50
V
Reverse voltage
V
R
40
V
Peak forward surge current
t
p
=1
s
I
FSM
4
A
Forward current
I
F
600
mA
Average forward current
V
R
=0
I
FAV
300
mA
Power dissipation
P
V
500
mW
Junction temperature
T
j
175
?
Storage temperature range
T
stg
-65~+175
?
Maximum Thermal Resistance
T
j
=25
?
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mm
50mm
1.6mm
R
thJA
500
K/W
Formosa MS
LL4150
Formosa MS
2
Electrical Characteristics
T
j
=25
?
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max Unit
I
F
=1mA
V
F
0.54
0.62
V
I
F
=10mA
V
F
0.66
0.74
V
I
F
=50mA
V
F
0.76
0.86
V
I
F
=100mA
V
F
0.82
0.92
V
Forward voltage
I
F
=200mA
V
F
0.87
1.0
V
V
R
=50V
I
R
100
nA
Reverse current
V
R
=50V, T
j
=150
?
I
R
100
A
Diode capacitance
V
R
=0, f=1MHz, V
HF
=50mV
C
D
2.5
pF
Reverse recovery time
I
F
= I
R
=10... 100mA, i
R
=1mA,
R
L
=100
O
t
rr
4
ns
Dimensions in mm
Cathode band

Glass Case
Mini Melf / SOD 80
JEDEC DO 213 AA