MRF1511NT1 MRF1511T1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large-signal, common source amplifier applications in 7.5 volt
portable FM equipment.
Specified Performance @ 175 MHz, 7.5 Volts
Output Power -- 8 Watts
Power Gain -- 11.5 dB
Efficiency -- 55%
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
RF Power Plastic Surface Mount Package
N Suffix Indicates Lead-Free Terminations
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +40
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Drain Current -- Continuous
I
D
4
Adc
Total Device Dissipation @ T
C
= 25C
(1)
Derate above 25C
P
D
62.5
0.5
W
W/C
Storage Temperature Range
T
stg
-65 to +150
C
Operating Junction Temperature
T
J
150
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
JC
2
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
C
1. Calculated based on the formula P
D
=
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1511
Rev. 3, 3/2005
Freescale Semiconductor
Technical Data
MRF1511NT1
MRF1511T1
175 MHz, 8 W, 7.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
TJ TC
RJC
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF1511NT1 MRF1511T1
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 35 Vdc, V
GS
= 0)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 7.5 Vdc, I
D
= 170 A)
V
GS(th)
1.0
1.6
2.1
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
--
0.4
--
Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
--
100
--
pF
Output Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
--
53
--
pF
Reverse Transfer Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
--
8
--
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 175 MHz)
G
ps
10
11.5
--
dB
Drain Efficiency
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 175 MHz)
50
55
--
%
MRF1511NT1 MRF1511T1
3
RF Device Data
Freescale Semiconductor
Figure 1. 135 - 175 MHz Broadband Test Circuit
V
DD
C6
R4
C7
C5
R3
RF
INPUT
RF
OUTPUT
Z2
Z3
Z6
C1
C3
C14
DUT
Z7
Z9
Z10
Z4
Z5
L4
Z8
N2
C18
B2
N1
+
C11
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
C1, C5, C18
120 pF, 100 mil Chip Capacitor
C2, C10, C12 0 to 20 pF, Trimmer Capacitor
C3
33 pF, 100 mil Chip Capacitor
C4
68 pF, 100 mil Chip Capacitor
C6, C15
10 F, 50 V Electrolytic Capacitor
C7, C16
1,200 pF, 100 mil Chip Capacitor
C8, C17
0.1 F, 100 mil Chip Capacitor
C9
150 pF, 100 mil Chip Capacitor
C11
43 pF, 100 mil Chip Capacitor
C13
24 pF, 100 mil Chip Capacitor
C14
300 pF, 100 mil Chip Capacitor
L1, L3
12.5 nH, A04T, Coilcraft
L2
26 nH, 4 Turn, Coilcraft
L4
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mount
R1
15 , 0805 Chip Resistor
R2
1.0 k, 1/8 W Resistor
R3
1.0 k, 0805 Chip Resistor
R4
33 k, 1/8 W Resistor
Z1
0.200 x 0.080 Microstrip
Z2
0.755 x 0.080 Microstrip
Z3
0.300 x 0.080 Microstrip
Z4
0.065 x 0.080 Microstrip
Z5, Z6
0.260 x 0.223 Microstrip
Z7
0.095 x 0.080 Microstrip
Z8
0.418 x 0.080 Microstrip
Z9
1.057 x 0.080 Microstrip
Z10
0.120 x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
Z1
C2
R1
C4
V
GG
C15
+
C8
B1
R2
C16
C17
C9
C10
C13
C12
L3
L2
L1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
175 MHz
155 MHz
135 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-5
-15
-20
-10
2
1
4
5
Figure 2. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
2
Figure 3. Input Return Loss
versus Output Power
0.3
P out
, OUTPUT
POWER (W
A
TTS)
0
8
0.5
0.1
4
0.4
0.7
0.2
0
10
3
0.6
6
V
DD
= 7.5 V
7
6
9
10
8
175 MHz
155 MHz
135 MHz
V
DD
= 7.5 V
-25
4
RF Device Data
Freescale Semiconductor
MRF1511NT1 MRF1511T1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
2
P
out
, OUTPUT POWER (WATTS)
50
0
70
0
10
Ef
f, DRAIN EFFICIENCY
(%)
30
60
40
3
1
Ef
f, DRAIN EFFICIENCY
(%)
Figure 4. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
8
6
14
Figure 5. Drain Efficiency versus Output Power
2
GAIN (dB)
5
Figure 6. Output Power versus Biasing Current
12
I
DQ
, BIASING CURRENT (mA)
4
Figure 7. Drain Efficiency versus
Biasing Current
80
I
DQ
, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
4
V
DD
, SUPPLY VOLTAGE (VOLTS)
2
Figure 9. Drain Efficiency versus Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
30
14
8
4
0
40
60
70
40
400
0
8
14
600
1000
80
5
6
10
10
16
200
50
4
12
P out
, OUTPUT
POWER (W
A
TTS)
200
1000
400
600
P out
, OUTPUT
POWER (W
A
TTS)
6
14
16
12
6
12
8
16
3
1
60
4
6
10
12
Ef
f, DRAIN EFFICIENCY
(%)
50
70
4
7
5
8
6
9
20
10
175 MHz
155 MHz
135 MHz
V
DD
= 7.5 V
175 MHz
155 MHz
135 MHz
V
DD
= 7.5 V
7
10
9
8
6
800
7
8
9
11
175 MHz
155 MHz
135 MHz
V
DD
= 7.5 V
P
in
= 27 dBm
800
175 MHz
155 MHz
135 MHz
V
DD
= 7.5 V
P
in
= 27 dBm
10
175 MHz
155 MHz
135 MHz
I
DQ
= 150 mA
P
in
= 27 dBm
10
175 MHz
155 MHz
135 MHz
I
DQ
= 150 mA
P
in
= 27 dBm
MRF1511NT1 MRF1511T1
5
RF Device Data
Freescale Semiconductor
Figure 10. 66 - 88 MHz Broadband Test Circuit
V
DD
C6
R4
C7
C5
R3
RF
INPUT
RF
OUTPUT
Z2
Z3
Z6
C1
C3
C12
DUT
Z7
Z9
Z10
Z4
Z5
L4
Z8
N2
C16
B2
N1
+
C9
Z1
C2
R1
C4
V
GG
C13
+
C8
B1
R2
C14
C15
C11
C10
L3
L1
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
C1, C12
330 pF, 100 mil Chip Capacitor
C2
43 pF, 100 mil Chip Capacitor
C3, C10
0 to 20 pF, Trimmer Capacitor
C4
24 pF, 100 mil Chip Capacitor
C5, C16
120 pF, 100 mil Chip Capacitor
C6, C13
10 F, 50 V Electrolytic Capacitor
C7, C14
1,200 pF, 100 mil Chip Capacitor
C8, C15
0.1 F, 100 mil Chip Capacitor
C9
380 pF, 100 mil Chip Capacitor
C11
75 pF, 100 mil Chip Capacitor
L1
82 nH, Coilcraft
L2
55.5 nH, 5 Turn, Coilcraft
L3
39 nH, 6 Turn, Coilcraft
N1, N2
Type N Flange Mount
R1
15 , 0805 Chip Resistor
R2
51 , 1/2 W Resistor
R3
100 , 0805 Chip Resistor
R4
33 k, 1/8 W Resistor
Z1
0.136 x 0.080 Microstrip
Z2
0.242 x 0.080 Microstrip
Z3
1.032 x 0.080 Microstrip
Z4
0.145 x 0.080 Microstrip
Z5, Z6
0.260 x 0.223 Microstrip
Z7
0.134 x 0.080 Microstrip
Z8
0.490 x 0.080 Microstrip
Z9
0.872 x 0.080 Microstrip
Z10
0.206 x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 66 - 88 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-18
-20
-10
2
1
0
4
5
Figure 11. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
2
Figure 12. Input Return Loss
versus Output Power
0.3
P out
, OUTPUT
POWER (W
A
TTS)
0
6
0.5
0.1
4
0.4
0.7
0.2
0
10
3
0.6
8
66 MHz
77 MHz
88 MHz
V
DD
= 7.5 V
7
6
9
10
8
-14
-16
-12
-2
-6
-8
-4
66 MHz
77 MHz
88 MHz
V
DD
= 7.5 V
6
RF Device Data
Freescale Semiconductor
MRF1511NT1 MRF1511T1
TYPICAL CHARACTERISTICS, 66 - 88 MHz
5
P
out
, OUTPUT POWER (WATTS)
50
0
70
1
4
Ef
f, DRAIN EFFICIENCY
(%)
30
60
40
3
2
Ef
f, DRAIN EFFICIENCY
(%)
Figure 13. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
8
10
16
Figure 14. Drain Efficiency versus
Output Power
2
GAIN (dB)
1
Figure 15. Output Power versus
Biasing Current
12
I
DQ
, BIASING CURRENT (mA)
4
Figure 16. Drain Efficiency versus
Biasing Current
80
I
DQ
, BIASING CURRENT (mA)
Figure 17. Output Power versus
Supply Voltage
5
V
DD
, SUPPLY VOLTAGE (VOLTS)
2
Figure 18. Drain Efficiency versus
Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
9
8
5
0
40
60
60
40
400
0
8
14
600
1000
80
6
8
10
12
18
200
50
4
14
P out
, OUTPUT
POWER (W
A
TTS)
200
1000
400
600
P out
, OUTPUT
POWER (W
A
TTS)
6
9
10
7
6
7
8
10
3
5
4
6
10
12
Ef
f, DRAIN EFFICIENCY
(%)
50
70
30
I
DQ
= 150 mA
P
in
= 25.7 dBm
7
6
9
8
10
66 MHz
77 MHz
88 MHz
20
10
10
6
9
8
7
66 MHz
77 MHz
88 MHz
800
5
11
7
9
66 MHz
77 MHz
88 MHz
V
DD
= 7.5 V
P
in
= 25.7 dBm
V
DD
= 7.5 V
V
DD
= 7.5 V
800
70
66 MHz
77 MHz
88 MHz
V
DD
= 7.5 V
P
in
= 25.7 dBm
66 MHz
77 MHz
88 MHz
66 MHz
77 MHz
88 MHz
I
DQ
= 150 mA
P
in
= 25.7 dBm
MRF1511NT1 MRF1511T1
7
RF Device Data
Freescale Semiconductor
Note: Z
OL
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 19. Series Equivalent Input and Output Impedance
Z
o
= 10
Z
in
= Complex conjugate of source
impedance with parallel 15
resistor and 24 pF capacitor in
series with gate. (See Figure 10).
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
D
> 50 %.
f
MHz
Z
in
Z
OL
*
135
20.1 -j0.5
2.53 -j2.61
Z
in
= Complex conjugate of source
impedance with parallel 15
resistor and 68 pF capacitor in
series with gate. (See Figure 1).
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
D
> 50 %.
V
DD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
155
17.0 +j3.6
3.01 -j2.48
175
15.2 +j7.9
2.52 -j3.02
f
MHz
Z
in
Z
OL
*
66
25.3 -j0.31 3.62 -j0.751
V
DD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
77
25.6 +j3.62 3.59 -j0.129
88
26.7 +j6.79 3.37 -j0.173
Z
OL
*
Z
in
135
155
f = 175 MHz
135
155
f = 175 MHz
66
77
Z
in
f = 88 MHz
66
77
f = 88 MHz
Z
OL
*
Zin
Z OL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF1511NT1 MRF1511T1
Table 5. Common Source Scattering Parameters (V
DD
= 7.5 Vdc)
I
DQ
= 150 mA
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
30
0.88
-165
18.92
95
0.015
8
0.84
-169
50
0.88
-171
11.47
91
0.016
-5
0.84
-173
100
0.87
-175
5.66
85
0.016
-7
0.84
-176
150
0.87
-176
3.75
82
0.015
-5
0.85
-176
200
0.87
-177
2.78
78
0.014
-6
0.84
-176
250
0.87
-177
2.16
75
0.014
-10
0.85
-176
300
0.88
-177
1.77
72
0.012
-17
0.86
-176
350
0.88
-177
1.49
69
0.013
-11
0.86
-176
400
0.88
-177
1.26
66
0.013
-17
0.87
-175
450
0.88
-177
1.08
64
0.011
-20
0.87
-175
500
0.89
-176
0.96
63
0.012
-20
0.88
-175
I
DQ
= 800 mA
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
30
0.89
-166
18.89
95
0.014
10
0.85
-170
50
0.88
-172
11.44
91
0.015
8
0.84
-174
100
0.87
-175
5.65
86
0.016
-2
0.85
-176
150
0.87
-177
3.74
82
0.014
-8
0.84
-177
200
0.87
-177
2.78
78
0.013
-18
0.85
-177
250
0.88
-177
2.16
75
0.012
-11
0.85
-176
300
0.88
-177
1.77
73
0.015
-15
0.86
-176
350
0.88
-177
1.50
70
0.009
-7
0.87
-176
400
0.88
-177
1.26
67
0.012
-3
0.87
-176
450
0.88
-177
1.09
65
0.012
-18
0.87
-175
500
0.89
-177
0.97
64
0.009
-10
0.88
-175
I
DQ
= 1.5 A
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
30
0.90
-168
17.89
95
0.013
2
0.86
-172
50
0.89
-173
10.76
91
0.013
3
0.86
-175
100
0.88
-176
5.32
86
0.014
-19
0.86
-177
150
0.88
-177
3.53
83
0.013
-6
0.86
-177
200
0.88
-177
2.63
80
0.011
-4
0.86
-177
250
0.88
-178
2.05
77
0.012
-14
0.86
-177
300
0.88
-177
1.69
75
0.013
-2
0.87
-177
350
0.89
-177
1.43
72
0.010
-9
0.87
-176
400
0.89
-177
1.22
70
0.014
-3
0.88
-176
450
0.89
-177
1.06
68
0.011
-8
0.88
-176
500
0.89
-177
0.94
67
0.011
-15
0.88
-176
MRF1511NT1 MRF1511T1
9
RF Device Data
Freescale Semiconductor
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common-source, RF power, N-Channel
enhancement mode, Lateral Metal-Oxide Semiconductor
Field-Effect Transistor (MOSFET). Freescale Application
Note AN211A, "FETs in Theory and Practice", is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF portable power amplifier applica-
tions. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate-to-drain (C
gd
), and
gate-to-source (C
gs
). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain-to-source (C
ds
). These capacitances are charac-
terized as input (C
iss
), output (C
oss
) and reverse transfer
(C
rss
)
capacitances on data sheets. The relationships be-
tween the inter-terminal capacitances and those given on
data sheets are shown below. The C
iss
can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
Drain
C
ds
Source
Gate
C
gd
C
gs
C
iss
= C
gd
+ C
gs
C
oss
= C
gd
+ C
ds
C
rss
= C
gd
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full-on condition. This on-resistance, R
DS(on)
, occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate-source voltage and drain current. The
drain-source voltage under these conditions is termed
V
DS(on)
. For MOSFETs, V
DS(on)
has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BV
DSS
values for this device are higher than normally re-
quired for typical applications. Measurement of BV
DSS
is not
recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 10
9
-- resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate-to-source threshold voltage,
V
GS(th)
.
Gate Voltage Rating -- Never exceed the gate voltage
rating. Exceeding the rated V
GS
can result in permanent
damage to the oxide layer in the gate region.
Gate Termination -- The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build-up on
the input capacitor due to leakage currents or pickup.
Gate Protection -- These devices do not have an internal
monolithic zener diode from gate-to-source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate-to-source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate-drain capacitance. If the
gate-to-source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (I
DQ
), whose value is application dependent.
This device was characterized at I
DQ
= 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, I
DQ
may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
10
RF Device Data
Freescale Semiconductor
MRF1511NT1 MRF1511T1
MOUNTING
The specified maximum thermal resistance of 2C/W as-
sumes a majority of the 0.065 x 0.180 source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, "Thermal Management and Mounting Meth-
od for the PLD-1.5 RF Power Surface Mount Package," and
Engineering Bulletin EB209/D, "Mounting Method for RF
Power Leadless Surface Mount Transistor" for additional in-
formation.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, "Impedance
Matching Networks Applied to RF Power Transistors."
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two-port stability analysis with this device's
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, "RF Small-Signal Design
Using Two-Port Parameters" for a discussion of two port
network theory and stability.
MRF1511NT1 MRF1511T1
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.115
2.92
0.020
0.51
0.115
2.92
mm
inches
0.095
2.41
0.146
3.71
SOLDER FOOTPRINT
CASE 466-03
ISSUE C
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.255
0.265
6.48
6.73
B
0.225
0.235
5.72
5.97
C
0.065
0.072
1.65
1.83
D
0.130
0.150
3.30
3.81
E
0.021
0.026
0.53
0.66
F
0.026
0.044
0.66
1.12
G
0.050
0.070
1.27
1.78
H
0.045
0.063
1.14
1.60
K
0.273
0.285
6.93
7.24
L
0.245
0.255
6.22
6.48
N
0.230
0.240
5.84
6.10
P
0.000
0.008
0.00
0.20
Q
0.055
0.063
1.40
1.60
R
0.200
0.210
5.08
5.33
S
0.006
0.012
0.15
0.31
U
0.006
0.012
0.15
0.31
ZONE V 0.000
0.021
0.00
0.53
ZONE W 0.000
0.010
0.00
0.25
ZONE X 0.000
0.010
0.00
0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
J
0.160
0.180
4.06
4.57
A
B
D
F
L
R
3
4
2
1
K
N
ZONE V
ZONE W
ZONE X
G
S
H
U
_
10 DRAFT
P
C
E
0.35 (0.89) X 45 5
"
Y
Y
Q
VIEW Y-Y
_
_
4
2
1
3
PLD-1.5
PLASTIC
12
RF Device Data
Freescale Semiconductor
MRF1511NT1 MRF1511T1
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MRF1511
Rev. 3, 3/2005
Document Number:
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