MRF1513NT1 MRF1513T1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power -- 3 Watts
Power Gain -- 11 dB
Efficiency -- 55%
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
N Suffix Indicates Lead-Free Terminations
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +40
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Drain Current -- Continuous
I
D
2
Adc
Total Device Dissipation @ T
C
= 25C
(1)
Derate above 25C
P
D
31.25
0.25
W
W/C
Storage Temperature Range
T
stg
-65 to +150
C
Operating Junction Temperature
T
J
150
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
JC
4
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
C
1. Calculated based on the formula P
D
=
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1513
Rev. 6, 3/2005
Freescale Semiconductor
Technical Data
MRF1513NT1
MRF1513T1
520 MHz, 3 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
TJ TC
RJC
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
Table 4. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 60 A)
V
GS(th)
1.0
1.7
2.1
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
V
DS(on)
--
0.65
--
Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
--
33
--
pF
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
--
16.5
--
pF
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
--
2.2
--
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
G
ps
10
11
--
dB
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
50
55
--
%
MRF1513NT1 MRF1513T1
3
RF Device Data
Freescale Semiconductor
N1
Figure 1. 450 - 520 MHz Broadband Test Circuit
V
DD
C7
R4
C8
C6
R3
RF
INPUT
RF
OUTPUT
Z3
Z4
Z7
C1
C4
C13
DUT
Z8
Z9
Z10
Z5
Z6
L1
N2
C17
B2
+
C11
C10
B1, B2
Short Ferrite Beads, Fair Rite Products
#2743021446
C1, C13
240 pF, 100 mil Chip Capacitors
C2, C3, C4, C10,
C11, C12
0 to 20 pF Trimmer Capacitors
C5, C6, C17
120 pF, 100 mil Chip Capacitors
C7, C14
10 mF, 50 V Electrolytic Capacitors
C8, C15
1,200 pF, 100 mil Chip Capacitors
C9, C16
0.1 mF, 100 mil Chip Capacitors
L1
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mounts
R1, R3
15 Chip Resistors (0805)
R2
1 k, 1/8 W Resistor
R4
33 k, 1/8 W Resistor
Z1
0.236 x 0.080 Microstrip
Z2
0.981 x 0.080 Microstrip
Z3
0.240 x 0.080 Microstrip
Z4
0.098 x 0.080 Microstrip
Z5
0.192 x 0.080 Microstrip
Z6, Z7
0.260 x 0.223 Microstrip
Z8
0.705 x 0.080 Microstrip
Z9
0.342 x 0.080 Microstrip
Z10
0.347 x 0.080 Microstrip
Z11
0.846 x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
Z2
C3
R1
C5
V
GG
C14
+
C9
B1
R2
C15
C16
Z1
C2
Z11
C12
TYPICAL CHARACTERISTICS, 450 - 520 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-5
-15
-20
-10
1
0
0
5
Figure 2. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
1
Figure 3. Input Return Loss
versus Output Power
0.10
P out
, OUTPUT
POWER (W
A
TTS)
0
3
0.05
2
520 MHz
470 MHz
500 MHz
0.15
0.20
0
5
450 MHz
520 MHz
470 MHz
500 MHz
450 MHz
4
2
3
4
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
4
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
TYPICAL CHARACTERISTICS, 450 - 520 MHz
2
P
out
, OUTPUT POWER (WATTS)
50
0
Ef
f, DRAIN EFFICIENCY
(%)
30
60
40
3
1
500 MHz
520 MHz
470 MHz
Ef
f, DRAIN EFFICIENCY
(%)
Figure 4. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
11
10
14
Figure 5. Drain Efficiency versus Output Power
1
GAIN (dB)
0
Figure 6. Output Power versus Biasing Current
6
I
DQ
, BIASING CURRENT (mA)
1
Figure 7. Drain Efficiency versus
Biasing Current
70
I
DQ
, BIASING CURRENT (mA)
45
Figure 8. Output Power versus Supply Voltage
8
V
DD
, SUPPLY VOLTAGE (VOLTS)
0
Figure 9. Drain Efficiency versus Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
20
12
11
8
0
40
60
60
400
0
5
100
600
80
2
3
12
16
200
50
5
13
P out
, OUTPUT
POWER (W
A
TTS)
200
600
400
100
P out
, OUTPUT
POWER (W
A
TTS)
9
15
16
10
9
10
11
16
65
55
1
2
Ef
f, DRAIN EFFICIENCY
(%)
50
70
500 MHz
520 MHz
470 MHz
450 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
P
in
= 20.3 dBm
I
DQ
= 50 mA
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
P
in
= 20.3 dBm
I
DQ
= 50 mA
V
DD
= 12.5 Vdc
2
3
4
15
4
5
20
70
V
DD
= 12.5 Vdc
500
4
5
500
40
14
12
13
3
4
15
13
14
300
300
30
MRF1513NT1 MRF1513T1
5
RF Device Data
Freescale Semiconductor
Figure 10. 400 - 470 MHz Broadband Test Circuit
V
DD
C7
R4
C8
C6
R3
RF
INPUT
RF
OUTPUT
Z2
Z3
Z4
Z7
C1
C3
C12
DUT
Z8
Z10
Z5
Z6
L1
Z9
N2
C16
B2
N1
+
C11
B1, B2
Short Ferrite Bead, Fair Rite Products
#2743021446
C1, C12
330 pF, 100 mil Chip Capacitors
C2, C3, C4,
C10, C11
1 to 20 pF Trimmer Capacitors
C5, C6, C16
120 pF, 100 mil Chip Capacitors
C7, C13
10 F, 50 V Electrolytic Capacitors
C8, C14
1,200 pF, 100 mil Chip Capacitors
C9, C15
0.1 mF, 100 mil Chip Capacitors
L1
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mounts
R1
15 Chip Resistor (0805)
R2
1 k, 1/8 W Resistor
R3
15 Chip Resistor (0805)
R4
33 k, 1/8 W Resistor
Z1
0.253 x 0.080 Microstrip
Z2
0.958 x 0.080 Microstrip
Z3
0.247 x 0.080 Microstrip
Z4
0.193 x 0.080 Microstrip
Z5
0.132 x 0.080 Microstrip
Z6, Z7
0.260 x 0.223 Microstrip
Z8
0.494 x 0.080 Microstrip
Z9
0.941 x 0.080 Microstrip
Z10
0.452 x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
Z1
C2
C10
R1
C5
V
GG
C13
+
C9
B1
R2
C14
C15
C4
TYPICAL CHARACTERISTICS, 400 - 470 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-5
-15
-20
-10
2
0
0
1
Figure 11. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
2
Figure 12. Input Return Loss
versus Output Power
P out
, OUTPUT
POWER (W
A
TTS)
0
0.08
0.02
1
440 MHz
470 MHz
0.06
0.12
0.04
0
5
400 MHz
3
470 MHz
400 MHz
440 MHz
0.10
3
4
4
5
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
6
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
TYPICAL CHARACTERISTICS, 400 - 470 MHz
440 MHz
2
P
out
, OUTPUT POWER (WATTS)
50
0
70
0
4
Ef
f, DRAIN EFFICIENCY
(%)
30
60
40
3
1
Ef
f, DRAIN EFFICIENCY
(%)
Figure 13. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
13
12
16
Figure 14. Drain Efficiency versus Output
Power
2
GAIN (dB)
0
Figure 15. Output Power versus
Biasing Current
6
I
DQ
, BIASING CURRENT (mA)
1
Figure 16. Drain Efficiency versus
Biasing Current
70
I
DQ
, BIASING CURRENT (mA)
45
Figure 17. Output Power versus
Supply Voltage
8
V
DD
, SUPPLY VOLTAGE (VOLTS)
0
Figure 18. Drain Efficiency versus
Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
30
12
12
8
0
60
70
60
400
0
5
100
600
80
2
3
14
18
200
50
5
15
P out
, OUTPUT
POWER (W
A
TTS)
200
600
400
300
P out
, OUTPUT
POWER (W
A
TTS)
13
9
16
11
9
10
11
16
3
1
65
55
1
3
Ef
f, DRAIN EFFICIENCY
(%)
470 MHz
440 MHz
400 MHz
470 MHz
440 MHz
400 MHz
470 MHz
440 MHz
400 MHz
470 MHz
440 MHz
400 MHz
470 MHz
440 MHz
400 MHz
470 MHz
400 MHz
V
DD
= 12.5 Vdc
P
in
= 18.7 dBm
P
in
= 18.7 dBm
I
DQ
= 50 mA
V
DD
= 12.5 Vdc
P
in
= 18.7 dBm
P
in
= 18.7 dBm
I
DQ
= 50 mA
17
20
10
5
500
5
4
500
40
10
14
15
2
4
50
40
20
15
13
14
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
4
100
300
MRF1513NT1 MRF1513T1
7
RF Device Data
Freescale Semiconductor
Figure 19. 135 - 175 MHz Broadband Test Circuit
V
DD
C7
R4
C8
C6
R3
RF
INPUT
RF
OUTPUT
Z2
Z6
C1
C13
DUT
Z8
Z9
Z10
Z4
Z5
L4
N2
C17
B2
N1
+
C11
C4
B1, B2
Short Ferrite Beads, Fair Rite Products
#2743021446
C1, C13
330 pF, 100 mil Chip Capacitors
C2, C4, C10, C12
0 to 20 pF Trimmer Capacitors
C3
12 pF, 100 mil Chip Capacitor
C5
130 pF, 100 mil Chip Capacitor
C6, C17
120 pF, 100 mil Chip Capacitors
C7, C14
10 F, 50 V Electrolytic Capacitors
C8, C15
1,000 pF, 100 mil Chip Capacitors
C9, C16
0.1 F, 100 mil Chip Capacitors
C11
18 pF, 100 mil Chip Capacitor
L1
26 nH, 4 Turn, Coilcraft
L2
8 nH, 3 Turn, Coilcraft
L3
55.5 nH, 5 Turn, Coilcraft
L4
33 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mounts
R1
15 W Chip Resistor (0805)
R2
56 W, 1/8 W Chip Resistor
R3
10 W, 1/8 W Chip Resistor
R4
33 kW, 1/8 W Chip Resistor
Z1
0.115 x 0.080 Microstrip
Z2
0.230 x 0.080 Microstrip
Z3
1.034 x 0.080 Microstrip
Z4
0.202 x 0.080 Microstrip
Z5, Z6
0.260 x 0.223 Microstrip
Z7
1.088 x 0.080 Microstrip
Z8
0.149 x 0.080 Microstrip
Z9
0.171 x 0.080 Microstrip
Z10
0.095 x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
Z1
V
GG
C14
+
C9
B1
R2
C15
C16
L3
C12
L1
C10
R1
C5
Z3
C2
C3
Z7
L2
TYPICAL CHARACTERISTICS, 135 - 175 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-5
-15
-20
-10
2
0
0
1
Figure 20. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
1
Figure 21. Input Return Loss
versus Output Power
0.10
P out
, OUTPUT
POWER (W
A
TTS)
0
3
0.15
2
135 MHz
175 MHz
0.20
0.05
0
5
155 MHz
3
135 MHz
175 MHz
155 MHz
4
4
5
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
8
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
155 MHz
P
out
, OUTPUT POWER (WATTS)
50
0
0
Ef
f, DRAIN EFFICIENCY
(%)
30
60
40
3
Ef
f, DRAIN EFFICIENCY
(%)
Figure 22. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
13
12
17
Figure 23. Drain Efficiency versus Output
Power
2
GAIN (dB)
0
Figure 24. Output Power versus
Biasing Current
6
I
DQ
, BIASING CURRENT (mA)
Figure 25. Drain Efficiency versus
Biasing Current
80
I
DQ
, BIASING CURRENT (mA)
Figure 26. Output Power versus
Supply Voltage
8
V
DD
, SUPPLY VOLTAGE (VOLTS)
0
Figure 27. Drain Efficiency versus
Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
20
9
13
8
0
40
60
60
400
0
5
300
600
80
2
4
3
14
18
200
50
4
16
P out
, OUTPUT
POWER (W
A
TTS)
200
600
400
100
P out
, OUTPUT
POWER (W
A
TTS)
12
9
16
11
12
11
13
16
3
1
65
55
2
1
Ef
f, DRAIN EFFICIENCY
(%)
50
70
155 MHz
135 MHz
175 MHz
20
10
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
155 MHz
135 MHz
175 MHz
V
DD
= 12.5 Vdc
P
in
= 19.5 dBm
P
in
= 19.5 dBm
I
DQ
= 50 mA
V
DD
= 12.5 Vdc
P
in
= 19.5 dBm
P
in
= 19.5 dBm
I
DQ
= 50 mA
5
15
4
1
5
2
70
5
500
500
10
15
14
4
3
10
14
15
V
DD
= 12.5 Vdc
V
DD
= 12.5 Vdc
300
100
70
75
30
MRF1513NT1 MRF1513T1
9
RF Device Data
Freescale Semiconductor
Z
in
= Complex conjugate of source
impedance with parallel 15
resistor and 130 pF capacitor in
series with gate. (See Figure 19).
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
D
> 50 %.
Note: Z
OL
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 28. Series Equivalent Input and Output Impedance
Z
in
= Complex conjugate of source
impedance with parallel 15
resistor and 130 pF capacitor in
series with gate. (See Figure 10).
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
D
> 50 %.
f
MHz
Z
in
Z
OL
*
450
4.64 +j5.82 13.11 +j2.15
Z
in
= Complex conjugate of source
impedance with parallel 15
resistor and 120 pF capacitor in
series with gate. (See Figure 1).
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
D
> 50 %.
V
DD
= 12.5 V, I
DQ
= 50 mA, P
out
= 3 W
470
5.42 +j6.34 12.16 +j3.26
500
5.96 +j5.45 11.03 +j5.42
520
4.28 +j4.94 10.99 +j7.18
f
MHz
Z
in
Z
OL
*
400
4.72 +j4.38 12.57 +j1.88
V
DD
= 12.5 V, I
DQ
= 50 mA, P
out
= 3 W
440
4.88 +j6.34 11.21 +j5.87
470
3.22 +j5.24
9.82 +j8.63
f
MHz
Z
in
Z
OL
*
135
16.55 +j1.82 22.01 +j10.32
V
DD
= 12.5 V, I
DQ
= 50 mA, P
out
= 3 W
155
15.59 +j5.38 22.03 +j8.07
175
15.55 +j9.43 22.08 +j6.85
Z
o
= 10
Z
OL
*
Z
in
f = 175 MHz
135
135
f = 175 MHz
f = 400 MHz
470
f = 400 MHz
470
Z
OL
*
Z
in
Z
o
= 10
f = 520 MHz
Z
in
450
f = 520 MHz
450
Z
OL
*
Zin
Z OL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
10
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
Table 5. Common Source Scattering Parameters (V
DD
= 12.5 Vdc)
I
DQ
= 50 mA
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
50
0.93
-94
22.09
125
0.044
33
0.77
-81
100
0.81
-131
12.78
101
0.052
6
0.61
-115
200
0.76
-153
6.31
81
0.047
-10
0.59
-135
300
0.76
-160
3.92
69
0.044
-19
0.64
-142
400
0.77
-164
2.74
60
0.040
-26
0.70
-147
500
0.79
-167
1.99
54
0.036
-31
0.75
-151
600
0.80
-169
1.55
48
0.034
-37
0.80
-155
700
0.81
-171
1.25
44
0.028
-40
0.82
-158
800
0.82
-172
1.02
38
0.027
-42
0.86
-161
900
0.83
-173
0.85
35
0.017
-42
0.88
-163
1000
0.84
-175
0.70
29
0.018
-49
0.91
-166
I
DQ
= 500 mA
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
50
0.84
-127
32.57
112
0.025
17
0.64
-130
100
0.80
-152
17.23
97
0.025
13
0.64
-153
200
0.78
-166
8.62
85
0.025
-9
0.65
-163
300
0.78
-171
5.58
79
0.023
-9
0.67
-166
400
0.78
-173
4.08
72
0.022
-9
0.69
-166
500
0.78
-175
3.14
68
0.020
-10
0.71
-167
600
0.79
-176
2.55
63
0.022
-15
0.74
-168
700
0.79
-177
2.14
60
0.019
-20
0.76
-168
800
0.80
-178
1.80
54
0.018
-31
0.79
-170
900
0.81
-178
1.54
51
0.015
-25
0.80
-170
1000
0.82
-179
1.31
46
0.012
-36
0.81
-172
I
DQ
= 1 A
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
50
0.84
-129
32.57
111
0.023
24
0.61
-137
100
0.80
-153
17.04
97
0.024
13
0.64
-156
200
0.78
-167
8.52
85
0.023
5
0.65
-165
300
0.77
-172
5.53
79
0.020
-7
0.67
-167
400
0.77
-174
4.06
73
0.020
-11
0.69
-167
500
0.78
-175
3.13
69
0.021
-9
0.72
-167
600
0.78
-177
2.54
64
0.017
-26
0.74
-168
700
0.78
-177
2.13
60
0.017
-14
0.75
-168
800
0.79
-178
1.81
55
0.015
-23
0.78
-170
900
0.80
-178
1.54
51
0.013
-31
0.79
-170
1000
0.80
-179
1.30
46
0.011
-17
0.80
-172
MRF1513NT1 MRF1513T1
11
RF Device Data
Freescale Semiconductor
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common-source, RF power, N-Channel
enhancement mode, Lateral Metal-Oxide Semiconductor
Field-Effect Transistor (MOSFET). Freescale Application
Note AN211A, "FETs in Theory and Practice", is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF portable power amplifier applica-
tions. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate-to-drain (C
gd
), and
gate-to-source (C
gs
). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain-to-source (C
ds
). These capacitances are charac-
terized as input (C
iss
), output (C
oss
) and reverse transfer
(C
rss
)
capacitances on data sheets. The relationships be-
tween the inter-terminal capacitances and those given on
data sheets are shown below. The C
iss
can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
Drain
C
ds
Source
Gate
C
gd
C
gs
C
iss
= C
gd
+ C
gs
C
oss
= C
gd
+ C
ds
C
rss
= C
gd
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full-on condition. This on-resistance, R
DS(on)
, occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate-source voltage and drain current. The
drain-source voltage under these conditions is termed
V
DS(on)
. For MOSFETs, V
DS(on)
has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BV
DSS
values for this device are higher than normally re-
quired for typical applications. Measurement of BV
DSS
is not
recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 10
9
-- resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate-to-source threshold voltage,
V
GS(th)
.
Gate Voltage Rating -- Never exceed the gate voltage
rating. Exceeding the rated V
GS
can result in permanent
damage to the oxide layer in the gate region.
Gate Termination -- The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build-up on
the input capacitor due to leakage currents or pickup.
Gate Protection -- These devices do not have an internal
monolithic zener diode from gate-to-source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate-to-source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate-drain capacitance. If the
gate-to-source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (I
DQ
), whose value is application dependent.
This device was characterized at I
DQ
= 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, I
DQ
may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
12
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
MOUNTING
The specified maximum thermal resistance of 4C/W as-
sumes a majority of the 0.065 x 0.180 source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, "Thermal Management and Mounting Meth-
od for the PLD-1.5 RF Power Surface Mount Package," and
Engineering Bulletin EB209/D, "Mounting Method for RF
Power Leadless Surface Mount Transistor" for additional in-
formation.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, "Impedance
Matching Networks Applied to RF Power Transistors."
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two-port stability analysis with this device's
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, "RF Small-Signal Design
Using Two-Port Parameters" for a discussion of two port
network theory and stability.
MRF1513NT1 MRF1513T1
13
RF Device Data
Freescale Semiconductor
NOTES
14
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
NOTES
MRF1513NT1 MRF1513T1
15
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.115
2.92
0.020
0.51
0.115
2.92
mm
inches
0.095
2.41
0.146
3.71
SOLDER FOOTPRINT
CASE 466-03
ISSUE C
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.255
0.265
6.48
6.73
B
0.225
0.235
5.72
5.97
C
0.065
0.072
1.65
1.83
D
0.130
0.150
3.30
3.81
E
0.021
0.026
0.53
0.66
F
0.026
0.044
0.66
1.12
G
0.050
0.070
1.27
1.78
H
0.045
0.063
1.14
1.60
K
0.273
0.285
6.93
7.24
L
0.245
0.255
6.22
6.48
N
0.230
0.240
5.84
6.10
P
0.000
0.008
0.00
0.20
Q
0.055
0.063
1.40
1.60
R
0.200
0.210
5.08
5.33
S
0.006
0.012
0.15
0.31
U
0.006
0.012
0.15
0.31
ZONE V 0.000
0.021
0.00
0.53
ZONE W 0.000
0.010
0.00
0.25
ZONE X 0.000
0.010
0.00
0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
J
0.160
0.180
4.06
4.57
A
B
D
F
L
R
3
4
2
1
K
N
ZONE V
ZONE W
ZONE X
G
S
H
U
_
10 DRAFT
P
C
E
0.35 (0.89) X 45 5
"
Y
Y
Q
VIEW Y-Y
_
_
4
2
1
3
PLD-1.5
PLASTIC
16
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. "Typical" parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including "Typicals", must be validated for each customer application by
customer's technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2005. All rights reserved.
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
MRF1513
Rev. 6, 3/2005
Document Number:
RoHS-compliant and/or Pb- free versions of Freescale products have the functionality
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
Freescale sales representative.
For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.
PDF 
ZIP