IGBT MODULE ( N series )
n
n
Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (
~3
Times Rated Current)
n
n
Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n
n
Outline Drawing
n
n
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
600
V
Gate -Emitter Voltage
V
GES
20
V
Continuous
I
C
150
Collector
1ms
I
C PULSE
300
Current
Continuous
-I
C
150
1ms
-I
C PULSE
300
Max. Power Dissipation
P
C
600
W
Operating Temperature
T
j
+150
C
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
A.C. 1min.
V
is
2500
V
Mounting *1
3.5
Terminals *1
3.5
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=600V
1.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
15
A
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=150mA
4.5
7.5
V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V I
C
=150A
2.8
V
Input capacitance
C
ies
V
GE
=0V
9900
Output capacitance
C
oes
V
CE
=10V
2200
pF
Reverse Transfer capacitance
C
res
f=1MHz
1000
t
ON
V
CC
=300V
0.6
1.2
t
r
I
C
=150A
0.2
0.6
t
OFF
V
GE
=
15V
0.6
1.0
t
f
R
G
=16
0.2
0.35
Diode Forward On-Voltage
V
F
I
F
=150A V
GE
=0V
3.0
V
Reverse Recovery Time
t
rr
I
F
=150A
300
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.21
Thermal Resistance
R
th(j-c)
Diode
0.47
C/W
R
th(c-f)
With Thermal Compound
0.05
n
n
Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
s
A
Nm
0
50
100
150
200
250
10
100
1000
t
f
t
r
t
off
t
on
Switching time vs. Collector current
V
CC
=300V, R
G
=16
, V
GE
=15V, T
j
=25C
Switching time : t
on
, t
r
, t
off
, t
f
[nsec]
Collector current : I
C
[A]
0
1
2
3
4
5
6
0
50
100
150
200
250
300
350
10V
V
GE
=20V,15V, 12V
Collector-Emitter voltage : V
CE
[V]
Collector current : I
C
[A]
8V
Collector current vs. Collector-Emitter voltage
T
j
=125C
0
1
2
3
4
5
6
0
50
100
150
200
250
300
350
Collector current vs. Collector-Emitter voltage
T
j
=25C
Collector current : I
C
[A]
Collector-Emitter voltage : V
CE
[V]
8V
10V
V
GE
=20V,15V,12V
0
5
10
15
20
25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25C
75A
150A
300A
I
C
=
Collector-Emitter voltage : V
CE
[V]
Gate-Emitter voltage : V
GE
[V]
0
5
10
15
20
25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125C
75A
150A
300A
I
C
=
Collector-Emitter voltage : V
CE
[V]
Gate-Emitter voltage : V
GE
[V]
0
50
100
150
200
250
10
100
1000
Switching time vs. Collector current
V
CC
=300V, R
G
=16
, V
GE
=15V, T
j
=125C
t
f
t
r
t
on
t
off
Switching time : t
on
, t
r
, t
off
, t
f
[nsec]
Collector current : I
C
[A]
0,001
0,01
0,1
1
0,01
0,1
1
IGBT
Diode
Transient thermal resistance
Thermal resistance : R
th(j-c)
[C/W]
Pulse width : PW [sec]
0
100
200
300
400
500
600
700
800
900
0
100
200
300
400
500
400V
300V
V
CC
=200V
0
5
10
15
20
25
Dynamic input characteristics
T
j
=25C
Collector-Emitter voltage : V
CE
[V]
Gate charge : Q
G
[nC]
10
10
100
1000
50
t
f
t
r
t
off
t
on
Switching time vs. R
G
V
CC
=300V, I
C
=150A, V
GE
=15V, T
j
=25C
Switching time : t
on
, t
r
, t
off
, t
f
[nsec]
Gate resistance : R
G
[
]
0
1
2
3
4
0
50
100
150
200
250
300
350
T
j
=125C 25C
Forward current vs. Forward voltage
V
GE
= O V
Forward current : I
F
[A]
Forward voltage : V
F
[V]
0
50
100
150
200
250
10
100
I
rr
25C
t
rr
25C
t
rr
125C
I
rr
125C
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
Reverse recovery current : I
rr
[A]
Reverse recovery time : trr [nsec]
Forward current : I
F
[A]
0
100
200
300
400
500
600
0
200
400
600
800
1000
1200
1400
RBSOA (Repetitive pulse)
S C S O A
(non-repetitive pulse)
Reversed biased safe operating area
+V
GE
=15V, -V
GE
<15V, T
j
<125C, R
G
>16
Collector current : I
C
[A]
Collector-Emitter voltage : V
CE
[V]
0
5
10
15
20
25
30
35
1
10
C
res
C
oes
C
ies
Capacitance vs. Collector-Emitter voltage
T
j
=25C
Capacitance : C
ies
, C
oes
, C
res
[nF]
Collector-Emitter Voltage : V
CE
[V]
0
50
100
150
200
250
300
0
2
4
6
8
10
12
14
E
rr
25C
E
rr
125C
Switching loss vs. Collector current
V
CC
=300V, R
G
=16
, V
GE
=15V
Switching loss : E
on
, E
off
, Err [mJ/cycle]
Collector Current : I
C
[A]
E
on
25C
E
on
125C
E
off
25C
E
off
125C
Fuji Electric GmbH
Fuji Electric (UK) Ltd.
Lyoner Strae 26
Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M
London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0
Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56
Fax.: 0181 - 233 11 60
Specification is subject to change without notice
Ma y97
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