IGBT-IPM R series
1200V / 50A 6
in one-package
6MBP50RA120
Features
Temperature protection provided by directly detecting the junction
temperature of the IGBTs
Low power loss and soft switching
Compatible with existing IPM-N series packages
High performance and high reliability IGBT with overheating protection
Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25C unless otherwise specified)
Symbol Rating Unit
Min. Max.
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
DC
Collector power dissipation
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)
V
DC
V
DC(surge)
V
SC
V
CES
I
C
I
CP
-I
C
P
C
T
j
V
CC *1
V
in *2
I
in
V
ALM *3
I
ALM *4
T
stg
T
op
V
iso *5
Item
0
0
200
0
-
-
-
-
-
0
0
-
0
-
-40
-20
-
-
-
900
1000
800
1200
50
100
50
357
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *
6
3.5 *
6
V
V
V
V
A
A
A
W
C
V
V
mA
V
mA
C
C
kV
Nm
Nm
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply V
ALM
between terminal No. 16 and 10.
*4 Apply I
ALM
to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 Nm
Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V)
Item Symbol Condtion Min. Typ. Max. Unit
INV
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
I
CES
V
CE(sat)
V
F
V
CE
=1200V input terminal open
Ic=50A
-Ic=50A
1.0 mA
2.6 V
3.0 V
Fig.1 Measurement of case temperature
6MBP50RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
fsw=0 to 15kHz Tc=-20 to 100C *7
fsw=0 to 15kHz Tc=-20 to 100C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature
surface of IGBT chips
Tj=125C
Tj=25C Fig.2
Tj=25C Fig.3
I
ccp
I
CCN
V
in(th)
V
Z
T
COH
T
CH
T
jOH
T
jH
I
OC
t
DOC
V
UV
V
H
t
ALM
t
SC
R
ALM
3
10
1.00
1.25
-
110
-
150
-
75
-
11.0
0.2
1.5
-
1425
-
-
1.35
1.60
8.0
-
20
-
20
-
10
-
-
2
-
1500
18
65
1.70
1.95
-
125
-
-
-
-
-
12.5
-
-
12
1575
mA
mA
V
V
V
C
C
C
C
A
s
V
V
ms
s
ohm
Dynamic characteristics(at Tc=Tj=125C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT)
Switching time (FWD)
ton IC=50A, VDC=600V
toff
trr IF=50A, VDC=600V
0.3 - -
- - 3.6
- - 0.4
s
s
s
Thermal characteristics(Tc=25C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(c-f)
- 0.35
- 0.85
0.05 -
C/W
C/W
C/W
INV IGBT
FWD
Item Symbol Min. Typ. Max. Unit
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)
V
DC
200 - 800 V
V
CC
13.5 15 16.5
V
f
SW
1 - 20 kHz
- 2.5 - 3.0 Nm
- 2.5 - 3.0 Nm
Recommendable value
*
7
Switching frequency of IPM
6MBP50RA120
IGBT-IPM
Block diagram
Outline drawings, mm
Mass : 440g
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
6MBP50RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
0
5
1 0
1 5
2 0
2 5
3 0
3 5
4 0
0
5
1 0
1 5
2 0
2 5
P o w e r s u p p ly c u rre n t v s . S w itc h in g fre q u e n c y
T j= 1 0 0 C
N -sid e
P -sid e
P
o
w
e
r s
u
p
p
l
y
c
u
rr
e
n
t :
I
c
c
(m
A
)
S w itc hing fr e qu e nc y : fs w (k H z)
V cc= 13V
V cc= 13V
V cc= 15V
V cc= 15V
V cc= 17V
V cc= 17V
0
0 .5
1
1 .5
2
2 .5
1 2
1 3
1 4
1 5
1 6
1 7
1 8
In p u t s ig n a l th re s h o ld vo lta g e
vs . P o w e r s u p p ly vo lta g e
I
n
p
u
t
s
i
gn
al
t
h
r
e
sh
ol
d
vo
l
t
ag
e
:
V
i
n(
on
)
,
V
i
n
(
o
f
f
)
(
V
)
P o w er su pply volta ge : V cc (V )
T j= 2 5 C
T j= 1 2 5 C
} V in (on)
} V in(off)
0
0.2
0.4
0.6
0.8
1
2 0
4 0
6 0
8 0
10 0
12 0
14 0
U n d e r vo lta g e h y s te ris is v s . J n c tio n te m p e ra tu re
U
n
de
r
v
o
l
t
a
g
e
hy
s
t
er
i
s
i
s
:
VH
(
V
)
Jun ction te m p era tu re : T j (C )
0
2
4
6
8
10
12
14
20
40
60
80
100
120
140
Under voltage vs. Junction temperature
Un
d
e
r
v
o
l
t
ag
e
:
V
U
V
T
(
V
)
Junction temperature : Tj (C)
0
0.5
1
1.5
2
2.5
3
1 2
1 3
1 4
1 5
1 6
1 7
1 8
A la rm h o ld tim e v s . P o w e r s u p p ly vo lta g e
A
l
a
r
m
hol
d
t
i
m
e
:
t
A
LM
(
m
S
e
c
)
P ow e r s up p ly v oltag e : V c c (V )
T j= 12 5 C
T j= 2 5C
0
5 0
1 0 0
1 5 0
2 0 0
1 2
1 3
1 4
1 5
1 6
1 7
1 8
O ve r h e a tin g c h a ra cte ris tics
T c OH ,T jO H ,Tc H ,T jH vs . Vcc
O
v
er h
e
a
t
i
n
g
pro
t
ec
t
i
on
:
T
c
O
H
,
T
j
O
H
(
C
)
OH
hy
s
t
er
i
s
i
s
:
T
c
H
,
T
j
H
(
C
)
Po w e r s u p ply v o lta g e : V c c ( V )
TjO H
Tc O H
Tc H,TjH
6MBP50RA120
IGBT-IPM
Inverter
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
0 .5
1
1 .5
2
2 .5
3
C o lle c to r c u rre n t v s . C o l le c to r-E m itte r vo lta g e
T j= 2 5 C
V cc = 1 3V
V cc = 1 5V
V cc = 1 7V
C
o
l
l
e
c
to
r
C
u
r
r
e
n
t
: Ic
(
A
)
C olle c to r-E m itte r v o lta g e : V c e (V )
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
0.5
1
1.5
2
2.5
3
C o lle cto r cu rren t vs. C o llector-E m itte r vo lta ge
Tj= 1 25 C
V cc= 13V
V cc= 15V
V cc= 17V
C
o
l
l
e
c
to
r C
u
r
r
e
n
t
:
Ic
(A
)
C ollecto r-Em itte r vo ltag e : Vce (V )
1 0
10 0
100 0
1 000 0
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
S w itc h in g tim e vs . C o lle c to r c u rre n t
E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 2 5 C
S
w
itc
h
in
g
t
i
m
e
:
to
n
,
to
f
f,t
f
(
n
S
e
c
)
C o llec tor c u rre nt : Ic (A )
to ff
to n
tf
1 0
10 0
100 0
1 000 0
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
S w itc h in g tim e vs . C o lle c to r c u rre n t
E d c = 6 0 0 V ,V c c = 1 5 V ,Tj= 1 2 5 C
S
w
i
t
c
h
i
n
g
ti
m
e
:
to
n
,
to
f
f
,
t
f
(
n
S
e
c
)
C o lle ct or cu rre nt : Ic (A )
to ff
to n
tf
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
0.5
1
1.5
2
2.5
3
F o rw a rd c u rre n t vs. F o rw a rd vo lta g e
12 5C
2 5 C
F
o
rw
a
r
d
C
u
rr
e
n
t
:
I
f
(
A
)
Fo rw a rd vo lta g e : V f (V )
1 0
10 0
100 0
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
R e ve rse re co ve ry ch a ra cte ristics
trr,Irr vs. IF
R
e
ve
r
s
e r
e
c
o
ve
r
y
c
u
r
r
e
n
t
:
I
r
r
(
A
)
R
e
ve
r
s
e
r
e
co
ve
r
y
t
i
m
e
:
t
r
r
(
n
S
e
c
)
F o rw ard c u rre nt : IF (A )
trr12 5C
trr2 5C
Irr12 5C
Irr2 5C
6MBP50RA120
IGBT-IPM
0
10 0
20 0
30 0
40 0
50 0
60 0
70 0
0
20 0
40 0
60 0
80 0
100 0
120 0
140 0
R e v e rs e d b ia s e d s a fe o p e ra tin g a re a
V c c = 1 5 V ,T j 1 2 5 C
C
o
ll
e
c
to
r
c
u
r
r
e
n
t
: Ic
(
A
)
C o lle c to r-E m itte r v o lta g e : V c e (V )
S C S O A
(no n-rep etitive pulse)
R B S O A
(R ep etitive pulse)
0
5 0
10 0
15 0
20 0
25 0
30 0
35 0
40 0
0
2 0
4 0
6 0
8 0
10 0
12 0
14 0
16 0
P o w e r d e ratin g fo r IG B T
(p e r d evice )
Co
l
l
e
c
t
e
r
P
o
we
r
Di
s
s
i
p
a
t
i
o
n
:
P
c
(
W
)
C a se T e m p erature : T c (C )
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
P o w e r d e ra tin g fo r F W D
(p e r d e v ic e )
Co
l
l
e
c
t
e
r
P
o
we
r
Di
s
s
i
p
a
t
i
o
n
:
P
c
(
W
)
C a s e T e m p era ture : T c (C )
0
5
1 0
1 5
2 0
2 5
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
S w itc h in g L os s v s . C olle c to r C u rre n t
E d c = 6 0 0V ,V c c = 1 5 V ,Tj= 2 5C
E o n
E o ff
E rr
S
w
i
t
ch
i
n
g
l
o
ss
:
E
o
n
,
E
o
f
f
,
E
r
r
(
m
J/
cyc
l
e
)
C o lle c tor c u rre nt : Ic ( A )
0
5
1 0
1 5
2 0
2 5
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
S w itc h in g L o s s v s . C o lle c to r C u rre n t
E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 1 2 5 C
E o n
E o ff
E rr
S
w
i
t
chi
n
g
l
o
s
s
:
E
o
n
,
E
o
f
f
,
E
r
r
(
m
J/
cyc
l
e
)
C o lle c t or cu rre nt : Ic (A )
=
<
0.01
0 .1
1
0 .0 01
0.01
0 .1
1
T ra nsie nt the rm a l re sistance
T
her
m
a
l
r
e
s
i
s
t
anc
e :
R
t
h(
j
-
c
)
(
C
/
W
)
P u lse w idth :P w (se c)
F W D
IG B T
6MBP50RA120
IGBT-IPM
0
50
1 00
1 50
2 00
0
20
40
60
80
1 00
1 20
1 40
O ver curre nt p ro te ction vs. Ju nctio n te m peratu re
Vcc=15 V
Ju n ctio n te m p e ra tu re : T j(C )
O
v
er
c
u
r
r
en
t
pr
o
t
e
c
t
i
on
l
e
v
e
l
:
I
o
c
(
A
)
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