DS05-13101-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
256 K (32 K
8) Bit
MB85R256
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DESCRIPTIONS
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM MB85R256 is able to retain data without back-up battery.
The memory cells used for the MB85R256 has inproved at least 10
10
times of read/write access per bit, significantly
outperforming FLASH memory and EEPROM in durability.
The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
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FEATURES
Bit configuration: 32,768 words x 8 bits
Read/write durability: 10
10
times/bit (Min)
Peripheral circuit CMOS construction
Operating power supply voltage: 3.0 V to 3.6 V
Operating temperature range:
-
40
C to
+
85
C
28-pin, SOP flat package
28-pin, TSOP(1) flat package
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PACKAGES
28-pin plastic SOP
28-pin plastic TSOP(1)
(FPT-28P-M17)
(FPT-28P-M03)
MB85R256
2
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PIN ASSIGNMENTS
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PIN DESCRIPTIONS
Pin name
Function
A
0
to A
14
Address Input
I/O
0
to I/O
7
Data input/output
CE
Chip enable input
WE
Write Enable input
OE
Output enable input
V
CC
Power supply (
+
3.3 V Typ)
GND
Ground
1
2
4
3
5
6
7
8
9
10
11
12
13
14
28
27
25
26
24
23
22
21
20
19
18
17
16
15
A
14
A
12
A
6
A
7
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
V
CC
WE
A
8
A
13
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
1
2
4
3
5
6
7
8
9
10
11
12
13
14
28
27
25
26
24
23
22
21
20
19
18
17
16
15
A
14
A
12
A
6
A
7
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
V
CC
A
8
A
13
A
9
A
11
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
WE
OE
(TOP VIEW)
(FPT-28P-M17)
(FPT-28P-M03)
MB85R256
3
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BLOCK DIAGRAM
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FUNCTION LIST
H: High level, L: Low level, x: Irrespective of "H" or "L"
Operation mode
CE
WE
OE
I/O
7
to I/O
0
Power supply current
Standby precharge
H
High-Z
Standby
(I
SB
)
L
L
Latch address
L
Write
L
L
H
Data input
Operation (I
CC
)
Read
L
H
L
Data output
Output Disable
H
H
High-Z
A
14
to A
10
A
7
to A
0
A
8
, A
9
CE
WE
OE
I/O0-I/O7
A
14
to A
0
Row de-
coder
Address
latch
FRAM array:
32,768 x 8
Block decoder
Column decoder
Control logic
I/O latch bus
driver
Pseudo-SRAM interface logic
circuit
I/O
7
to I/O
0
MB85R256
4
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ABSOLUTE MAXIMUM RANGES
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
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RECOMMENDED OPERATING CONDITIONS
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device's electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
Parameter
Symbol
Rating
Unit
Min
Max
Power supply voltage
V
CC
-
0.5
+
4.6
V
Input voltage
V
IN
-
0.5
V
CC
+
0.5
V
Output voltage
V
OUT
-
0.5
V
CC
+
0.5
V
Operating temperature
T
A
-
40
+
85
C
Storage temperature
Tstg
-
40
+
85
C
Parameter
Symbol
Value
Unit
Min
Typ
Max
Power supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
0.8
V
CC
V
CC
+
0.5
V
Low level input voltage
V
IL
-
0.5
+
0.6
V
Operating temperature
T
A
-
40
+
85
C
MB85R256
5
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ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
(within recommended operating conditions)
2.
AC Characteristics
(1) Read cycle
(within recommended operating conditions)
Parameter
Symbol
Conditions
Value
Unit
Min
Typ
Max
Input leakage current
| I
LI
|
V
IN
=
0 V to V
CC
10
A
Output leakage
current
| I
LO
|
V
OUT
=
0 V to V
CC
,
CE
=
V
IH
or OE
=
V
IH
10
A
Operating power
supply current
I
CC
CE
=
0.2 V,
Other Inputs
=
V
CC
-
0.2 V/0.2 V,
t
RC
(Min), Ii/o
=
0 mA
5
10
mA
Standby current
I
SB
CE
V
CC
5
100
A
High level output
voltage
V
OH
I
OH
=
-
100
A
0.8
V
CC
V
Low level output
voltage
V
OL
I
OL
=
1.0 mA
0.4
V
Parameter
Symbol
Value
Unit
Min
Max
Read cycle time
t
RC
235
ns
CE active time
t
CA
150
10,000
Read pulse width
t
RP
150
10,000
Precharge time
t
PC
85
Address setup time
t
AS
0
Address hold time
t
AH
25
CE access time
t
CE
150
OE access time
t
OE
150
CE output floating time
t
HZ
25
OE output floating time
t
OHZ
25
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