DS04-27200-7E
FUJITSU SEMICONDUCTOR
DATA SHEET
ASSP For Power Management Applications
Switching Regulator Controller
(Switchable between push-pull and single-end functions)
MB3759
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DESCRIPTION
The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators.
The IC contains most of the functions required for switching regulator control circuits. This reduces both the
component count and assembly work.
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FEATURES
Drives a 200 mA load
Can be set to push-pull or single-end operation
Prevents double pulses
Adjustable dead-time
Error amplifier has wide common phase input range
Built in a circuit to prevent misoperation due to low power supply voltage.
Built in an internal 5 V reference voltage with superior voltage reduction characteristics
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PACKAGES
16-pin plastic DIP
16-pin plastic SOP
(DIP-16P-M04)
(FPT-16P-M06)
MB3759
3
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ABSOLUTE MAXIMUM RATINGS
*: When mounted on a 4 cm square double-sided epoxy circuit board (1.5 mm thickness)
The ceramic circuit board is 3 cm x 4 cm (0.5 mm thickness)
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
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RECOMMENDED OPERATING CONDITIONS
Note: Values are for standard derating conditions. Give consideration to the ambient temperature and power con-
sumption if using a high supply voltage.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device's electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
Parameter
Symbol
Condition
Rating
Unit
Min
Max
Power supply voltage
V
CC
--
--
41
V
Collector output voltage
V
CE
--
--
41
V
Collector output current
I
CE
--
--
250
mA
Amplifier input voltage
V
I
--
--
V
CC
+
0.3
V
Power dissipation
Plastic DIP
P
D
Ta
+
25
C
--
1000
mW
SOP *
--
620
Operating temperature
Top
--
-
30
+
85
C
Storage temperature
Tstg
--
-
55
+
125
C
Parameter
Symbol
Value
Unit
Min
Typ
Max
Power supply voltage
V
CC
7
15
32
V
Collector output voltage
V
CE
--
--
40
V
Collector output current
I
CE
5
--
200
mA
Amplifier input voltage
V
IN
-
0.3
0 to V
R
V
CC
-
2
V
FB sink current
I
SINK
--
--
0.3
mA
FB source current
I
SOURCE
--
--
2
mA
Reference section output current
I
REF
--
5
10
mA
Timing resistor
R
T
1.8
30
500
k
Timing capacitor
C
T
470
1000
10
6
pF
Oscillator frequency
fosc
1
40
300
kHz
Operating temperature
Top
-
30
+
25
+
85
C
MB3759
4
s
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ELECTRICAL CHARACTERISTICS
(Continued)
(V
CC
= 15 V, Ta = +25
C)
Parameter
Symbol
Condition
Value
Unit
Min
Typ
Max
Reference
section
Output voltage
V
REF
I
O
=
1 mA
4.75
5.0
5.25
V
Input regulation
V
R(IN)
7 V
V
CC
40 V,
Ta
=
+
25
C
--
2
25
mV
Load regulation
V
R(LD)
1 mA
I
O
10 mA,
Ta
=
+
25
C
--
-
1
-
15
mV
Temperature stability
V
R
/
T
-
20
C
Ta
+
85
C
--
200
750
V/
C
Short circuit output
current
I
SC
--
15
40
--
mA
Reference lockout
voltage
--
--
--
4.3
--
V
Reference hysteresis
voltage
--
--
--
0.3
--
V
Oscillator
section
Oscillator frequency
fosc
R
T
=
30 k
,
C
T
=
1000 pF
36
40
44
kHz
Standard deviation
of frequency
--
R
T
=
30 k
,
C
T
=
1000 pF
--
3
--
%
Frequency change
with voltage
--
7 V
V
CC
40 V,
Ta
=
+
25
C
--
0.1
--
%
Frequency change with
temperature
fosc/
T
-
20
C
Ta
+
85
C
--
0.01
0.03
%/
C
Dead-time
control section
Input bias current
I
D
0
V
I
5.25 V
--
-
2
-
10
A
Maximum duty cycle (Each
output)
--
V
I
=
0
40
45
--
%
Input
threshold
voltage
0% duty
cycle
V
DO
--
--
3.0
3.3
V
Max duty
cycle
V
DM
--
0
--
--
V
MB3759
5
(Continued)
(V
CC
= 15 V, Ta = +25
C)
Parameter
Symbol
Condition
Value
Unit
Min
Typ
Max
Error
amplifier
section
Input offset voltage
V
IO
V
O (pin3)
= 2.5 V
--
2
10
mV
Input offset current
I
IO
V
O (pin3)
= 2.5 V
--
25
250
nA
Input bias current
I
I
V
O (pin3)
= 2.5 V
--
-
0.2
-
1.0
A
Common-mode input
voltage
V
CM
7 V
V
CC
40 V
-
0.3
--
V
CC
-
2
V
Open-loop voltage
amplification
A
V
0.5 V
V
O
3.5 V
70
95
--
dB
Unity-gain bandwidth
BW
A
V
= 1
--
800
--
kHz
Common-mode
rejection ratio
CMR
V
CC
= 40 V
65
80
--
dB
Output sink
current
(pin 3)
ISINK
I
SINK
-5 V
V
ID
-15 mV,
V
O
= 0.7 V
0.3
0.7
--
mA
ISOURCE
I
SOURCE
15 mV
V
ID
5V,
V
O
= 3.5 V
-
2
-
10
--
mA
Output
section
Collector leakage current
I
CO
V
CE
= 40 V,
V
CC
= 40 V
--
--
100
A
Emitter leakage current
I
EO
V
CC
= V
C
= 40 V,
V
E
= 0
--
--
-
100
A
Collector
emitter
saturation
voltage
Emitter
grounded
V
SAT(C)
V
E
= 0, I
C
= 200 mA
--
1.1
1.3
V
Emitter
follower
V
SAT(E)
V
C
= 15 V,
I
E
=
-
200 mA
--
1.5
2.5
V
Output control input
current
I
OPC
V
I
= V
REF
--
1.3
3.5
mA
PWM
comparator
section
Input threshold voltage
V
TH
0% Duty
--
4
4.5
V
Input sink current (pin 3)
I
SINK
V
O (pin3)
= 0.7 V
0.3
0.7
--
mA
Power
supply
current I
CC
V
(pin4
) = 2 V,
See "
s
TEST
CIRCUIT"
--
8
--
mA
Standby current
I
CCQ
V
(pin6
) = V
REF
,
I/O open
--
7
12
mA
Switching
characteristics
Rise time
Emitter
grounded
t
R
R
L
= 68
--
100
200
ns
Fall time
t
F
R
L
= 68
--
25
100
ns
Rise time
Emitter
follower
t
R
R
L
= 68
--
100
200
ns
Fall time
t
F
R
L
= 68
--
40
100
ns
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