DS05-11434-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY Mobile FCRAM
TM
CMOS
16 Mbit (1 M word
16 bit)
Mobile Phone Application Specific Memory
MB82DS01181E
-70L-A
DESCRIPTION
MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access
Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. MB82DS01181E is suited
for mobile applications such as Cellular Handset and PDA.
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
FEATURES
Asynchronous SRAM Interface
1 M word
16-bit Organization
Low-voltage Operating Conditions
: V
DD
=
+
1.7 V to
+
1.95 V
Wide Operating Temperature
: T
A
=
-
30
C to
+
85
C
Read/Write Cycle Time
: t
RC
=
t
WC
=
80 ns Min
Fast Random Access Time
: t
AA
=
t
CE
=
70 ns Max
Active current
: I
DDA1
= 20 mA Max
Standby current
: I
DDS1
= 100
A Max
Power down current
: I
DDPS
= 10
A Max
Byte Control
Shipping Form
: Wafer
/
Chip
MB82DS01181E
-70L-A
2
PIN DESCRIPTION
Pin Name
Description
A
19
to A
0
Address Input
CE1
Chip Enable 1 (Low Active)
CE2
Chip Enable 2 (High Active)
WE
Write Enable (Low Active)
OE
Output Enable (Low Active)
LB
Lower Byte Control (Low Active)
UB
Upper Byte Control (Low Active)
DQ
8
to DQ
1
Lower Byte Data Input/Output
DQ
16
to DQ
9
Upper Byte Data Input/Output
V
DD
Power Supply
V
SS
Ground
MB82DS01181E
-70L-A
4
FUNCTION TRUTH TABLE
Note : L
=
V
IL
, H
=
V
IH
, X can be either V
IL
or V
IH
, High-Z
=
High impedance
*1 : Should not be kept this logic condition longer than 1
s.
*2 : Power down mode can be entered from standby state and all DQ pins are in High-Z state.
*3 : Can be either V
IL
or V
IH
but must be valid before read or write.
Mode
CE2
CE1
WE
OE
LB
UB
A
19
to A
0
DQ
8
to DQ
1
DQ
16
to DQ
9
I
DD
Data
Retention
Standby (Deselect)
H
H
X
X
X
X
X
High-Z
High-Z
I
DDS
Yes
Output Disable*
1
L
H
H
X
X
*3
High-Z
High-Z
I
DDA
No Read
H
L
H
H
Valid
High-Z
High-Z
Read (Upper Byte)
H
L
Valid
High-Z
Output
Valid
Read (Lower Byte)
L
H
Valid
Output
Valid
High-Z
Read (Word)
L
L
Valid
Output
Valid
Output
Valid
No Write
L
H
H
H
Valid
Invalid
Invalid
Write (Upper Byte)
H
L
Valid
Invalid
Input
Valid
Write (Lower Byte)
L
H
Valid
Input
Valid
Invalid
Write (Word)
L
L
Valid
Input
Valid
Input
Valid
Power Down *
2
L
X
X
X
X
X
X
High-Z
High-Z
I
DDP
No
MB82DS01181E
-70L-A
5
ABSOLUTE MAXIMUM RATINGS
* : All voltages are referenced to V
SS
=
0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
*1 : All voltages are referenced to V
SS
=
0 V.
*2 : Overshoot spec. (V
IH (Max)
=
V
DD
+
1.0 V, pulse width
5.0 ns)
*3 : Undershoot spec. (V
IL (Min)
=
-
1.0 V, pulse width
5.0 ns)
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device's electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
Parameter
Symbol
Rating
Unit
Min
Max
Supply Voltage*
V
DD
-
0.5
+
3.6
V
Input Voltage*
V
IN
-
0.5
+
3.6
V
Output voltage*
V
OUT
-
0.5
+
3.6
V
Short Circuit Output Current
I
OUT
-
50
+
50
mA
Storage Temperature
T
STG
-
55
+
125
C
Parameter
Symbol
Value
Unit
Min
Max
Supply Voltage *
1
V
DD
1.7
1.95
V
V
SS
0
0
V
High Level Input Voltage *
1
, *
2
V
IH
V
DD
0.8
V
DD
+
0.2
V
Low Level Input Voltage *
1,
*
3
V
IL
-
0.3
V
DD
0.2
V
Ambient Temperature
T
A
-
30
+
85
C
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