Embedded EraseTM, Embedded ProgramTM and ExpressFlashTM are trademarks of Advanced Micro Devices, Inc.

DS05-20844-4E

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

16M (2M

8) BIT

MBM29F016A

-70/-90/-12

FEATURES

· Single 5.0 V read, write, and erase

Minimizes system level power requirements

· Compatible with JEDEC-standard commands

Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection

· 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
· Minimum 100,000 write/erase cycles
· High performance

70 ns maximum access time

· Sector erase architecture

Uniform sectors of 64 K bytes each
Any combination of sectors can be erased. Also supports full chip erase.

· Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

· Embedded ProgramTM Algorithms

Automatically programs and verifies data at specified address

· Data Polling and Toggle Bit feature for detection of program or erase cycle completion
· Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

· Low V

write inhibit

3.2 V

· Hardware RESET pin

Resets internal state machine to the read mode

· Erase Suspend/Resume

Supports reading or programming data to a sector not being erased

· Sector group protection

Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64 K bytes each)

· Temporary sector groups unprotection

Temporary sector unprotection via the RESET pin

MBM29F016A

-70/-90/-12

GENERAL DESCRIPTION

The MBM29F016A is a 16 M-bit, 5.0 V-Only Flash memory organized as 2 M bytes of 8 bits each. The 2 M bytes
of data is divided into 32 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ

to DQ

. The MBM29F016A is offered in a 48-pin TSOP(I) package. This device is designed to be programmed

in-system with the standard system 5.0 V V

supply. A 12.0 V V

is not required for program or erase operations.

The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F016A offers access times between 70 ns and 120 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.

The MBM29F016A is command set compatible with JEDEC standard E

PROMs. Commands are written to the

command register using standard microprocessor write timings. Register contents serve as input to an internal
state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase operations. Reading data out of the device is similar to reading
from 12.0 V Flash or EPROM devices.

The MBM29F016A is programmed by executing the program command sequence. This will invoke the Embedded
Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished
by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal
algorithm that automatically preprograms the array if it is not already programmed before executing the erase
operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1
second (if already completely preprogrammed). The MBM29F016A is erased when shipped from the factory.

The MBM29F016A device also features hardware sector group protection. This feature will disable both program
and erase operations in any combination of eight sector groups of memory.

A sector group consists of four

adjacent sectors grouped in the following pattern: sectors 0-3, 4-7, 8-11, 12-15, 16-19, 20-23, 24-27, and 28-31.

Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.

The device features single 5.0 V power supply operation for both read and program functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of
DQ

, or by the Toggle Bit I feature on DQ

or RY/BY output pin. Once the end of a program or erase cycle has

been completed, the device automatically resets to the read mode.

The MBM29F016A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into
the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs
during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read
mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.

Fujitsu's Flash technology combines years of EPROM and E

PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29F016A memory electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.

Document Outline

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Document Outline

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