FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
1N4150
Silicon Epitaxial Planar Diode
For general purpose and switch-
ing.
This diode is also available in other
case styles including: the SOD-123 case
with the type designation 1N4150W and the
MiniMELF case with the type designation
LL4150.
Symbol
Value
Unit
Peak Reverse Voltage
V
RM
50
V
Maximum Average Rectified Current
I
0
200
mA
Maximum Power Dissipation at T
amb
= 25 C
P
tot
500
mW
Maximum Junction Temperature
T
j
200
C
Maximum Forward Voltage Drop at I
F
= 200 mA
V
F
1.0
V
Maximum Reverse Current at V
R
= 50 V
I
R
100
nA
Max. Reverse Recovery Time
at I
F
= I
R
= 10 to 200 mA, to 0.1 I
F
t
rr
4.0
ns
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