FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
1N4448
Symbol
Value
Unit
Reverse Voltage
V
R
75
V
Peak Reverse Voltage
V
RM
100
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 C and f
50 Hz
I
0
150
1)
mA
Surge Forward Current at t < 1 s and T
j
= 25 C
I
FSM
500
mA
Power Dissipation at T
amb
= 25 C
P
tot
500
1)
mW
Junction Temperature
T
j
175
C
Storage Temperature Range
T
S
65 to +175
C
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Silicon Epitaxial Planar Diode
Fast switching diode.
This diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation IMBD4448.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
1N4448
Rectification Efficiency Measurement Circuit
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at I
F
= 5 mA
at I
F
= 10 mA
V
F
V
F
0.62
0.72
1
V
V
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150 C
I
R
I
R
I
R
25
5
50
nA
A
A
Reverse Breakdown Voltage
tested with 100
A Pulses
V
(BR)R
100
V
Capacitance
at V
F
= V
R
= 0 V
C
tot
4
pF
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
t
rr
4
ns
Thermal Resistance Junction to Ambient Air
R
thJA
350
1)
K/W
Recification Efficiency at f = 100 MHz, V
RF
= 2 V
v
0.45
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
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