2N4403
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
2N4401 is recommended.
On special request, this transistor is also
manufactured in the pin configuration
TO-18.
This transistor is also available in the SOT-23 case with
the type designation MMBT4403.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
40
Volts
Collector-Emitter Voltage
V
CEO
40
Volts
Emitter-Base Voltage
V
EBO
5.0
Volts
Collector Current - Continuous
I
C
600
mA
Power Dissipation at T
A
= 25C
P
tot
625
mW
Derate above 25C
5.0
mW/C
Power Dissipation at T
C
= 25C
P
tot
1.5
W
Derate above 25C
12
mW/C
Thermal Resistance Junction to Ambient Air
R
QJA
200
C/W
Thermal Resistance Junction to Case
R
QJC
83.3
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
E
C
B
TO-92
2/17/99
Dimensions in inches and (millimeters)
ADVANCED INFORMATION ADVANCED INFORMATION
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
.MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 0.1 mA, I
E
= 0
V
(BR)CBO
40
Volts
Collector-Emitter Breakdown Voltage
(1)
at I
C
= 1 mA, I
B
= 0
V
(BR)CEO
40
Volts
Emitter-Base Breakdown Voltage
at I
E
= 0.1 mA, I
C
= 0
V
(BR)EBO
5.0
Volts
Collector-Emitter Saturation Voltage
(1)
at I
C
= 150 mA, I
B
= 15 mA
V
CEsat
0.40
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
CEsat
0.75
Volts
Base-Emitter Saturation Voltage
(1)
at I
C
= 150 mA, I
B
= 15 mA
V
BEsat
0.75
0.95
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
BEsat
1.30
Volts
Collector Cutoff Current
at V
EB
= 0.4 V, V
CE
= 35 V
I
CEX
100
nA
Base Cutoff Current
at V
EB
= 0.4 V, V
CE
= 35 V
I
BEV
100
nA
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
h
FE
30
at V
CE
= 1 V, I
C
= 1 mA
h
FE
60
at V
CE
= 1 V, I
C
= 10 mA
h
FE
100
at V
CE
= 2 V, I
C
= 150 mA
(1)
h
FE
100
300
at V
CE
= 2 V, I
C
= 500 mA
(1)
h
FE
20
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kH
Z
h
ie
1.5
15
k
W
Voltage Feedback Ratio
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kH
Z
h
re
0.1 10
4
8 10
4
Current Gain-Bandwidth Product
at V
CE
= 10 V, I
C
= 20 mA, f = 100 MH
Z
f
T
200
MHz
Collector-Base Capacitance
at V
CB
= 10 V, I
E
=0, f = 1.0 MH
Z
C
CB
8.5
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, I
C
=0, f = 1.0 MH
Z
C
EB
30
pF
NOTES
(1) Pulse test: Pulse width 300
ms - Duty cycle 2%
2N4403
2N4403
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
fe
60
500
Output Admittance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
oe
1.0
100
mS
Delay Time (see Fig. 1)
at I
B1
= 15 mA, I
C
= 150 mA, V
CC
= 30V, V
EB
= 2V
t
d
15
ns
Rise Time (see Fig. 1)
at I
B1
= 15 mA, I
C
= 150 mA, V
CC
= 30V, V
EB
= 2V
t
r
20
ns
Storage Time (see Fig. 2)
at I
B1
= I
B2
= 15 mA, I
C
= 150 mA, V
CC
= 30V
t
s
225
ns
Fall Time (see Fig. 2)
at I
B1
= I
B2
= 15 mA, I
C
= 150 mA, V
CC
= 30V,
t
f
30
ns
1.0 to 100
ms Duty Cycle - 2%
0
200
W
< 20 ns
-30V
+14 V
-16 V
+4 V
1.0 to 100
ms Duty Cycle - 2%
0
C < 10 pF
S*
200
W
< 2 ns
-30V
+2 V
-16 V
+4 V
1k
W
1k
W
Scope rise time - 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
C < 10 pF
S
*
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - TURN-ON TIME
FIGURE 2 - TURN-OFF TIME
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