FEATURES
Small Signal Diodes
Dimensions in inches and (millimeters)
.016 (0.4)
.056
(
1
.4
3
)
.037(0.95) .037(0.95)
max
.
.004 (
0
.1)
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.007 (
0
.175)
.045 (
1
.15)
.118 (3.0)
.05
2
(
1
.
3
3
)
.005 (
0
.125)
.094 (2.4)
.037 (
0
.95)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
SOT-23
4/98
Symbol
Value
Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
V
R
V
R
V
R
100
150
200
V
V
V
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
V
RRM
V
RRM
V
RRM
120
200
250
V
V
V
Non-Repetitive Peak Forward Current
at t = 1
s
at t = 1 s
I
FSM
I
FSM
2.5
0.5
A
A
Average Rectified Forward Current
(averaged over any 20 ms period)
I
F(AV)
200
1)
mA
Forward DC Current at T
amb
= 25 C
I
F
200
2)
mA
Repetitive Peak Forward Current
I
FRM
625
mA
Power Dissipation up to T
amb
= 25 C
P
tot
200
2)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
1)
Measured under pulse conditions; Pulse time = tp
0.3 ms.
2)
Device on fiberglass substrate, see layout.
1
3
2
Top View
BAS19, BAS20, BAS21
Silicon Planar Epitaxial High-Speed
Diodes
For switching and general purpose
applications.
These diodes are also available in other case styles includ-
ing: the SOD-123 case with the type designation BAV19W -
BAV21W, the MiniMELF case with the type designation
BAV101 - BAV103, and the DO-35 case with the type desig-
nation BAV19 - BAV21.
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
BAS19, BAS20, BAS21
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at I
F
= 100 mA
at I
F
= 200 mA
V
F
V
F
1.0
1.25
V
V
Leakage Current
at V
R
= V
Rmax
at V
R
= V
Rmax
; T
j
= 150 C
I
R
I
R
100
100
nA
A
Dynamic Forward Resistance
at I
F
= 10 mA
r
f
5
Capacitance
at V
R
= 0, f = 1 MHz
C
tot
5
pF
Reverse Recovery Time (see figures)
from I
F
= 30 mA through I
R
= 30 mA to I
R
= 3 mA,
R
L
= 100
t
rr
50
ns
Thermal Resistance Junction to Ambient Air
R
thJA
430
2)
K/W
2)
Device on fiberglass substrate, see layout.
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
Test Circuit and Waveforms BAS19, BAS20, BAS21
Test circuit
Waveforms; I
R
= 3 mA
Input Signal
total pulse duration
t
p(tot)
= 2
s
duty factor
= 0.0025
rise time of reverse pulse
t
r
= 0.6 ns
reverse pulse duration
t
p
= 100 ns
Oscilloscope
rise time
t
r
= 0.35 ns
circuit capacitance*
C < 1 pF
*C = oscilloscope input capacitance + parasitic capacitance
PDF 
ZIP