FEATURES
Schottky Diodes
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
max
.
.004
(
0
.1)
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.
007 (
0
.175)
.045 (
1
.15)
.118 (3.0)
.052
(
1
.33
)
.005 (
0
.125)
.094 (2.4)
.037 (
0
.95)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 C
ambient temperature unless otherwise specified
SOT-23
4/98
BAS40 THRU BAS40-06
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
40
V
Forward Continuous Current at T
amb
= 25 C
I
F
200
1)
mA
Surge Forward Current at t
p
< 1 s, T
amb
= 25 C
I
FSM
600
1)
mA
Power Dissipation
1)
at T
amb
= 25 C
P
tot
200
1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
1)
Device on fiberglass substrate, see layout
These diodes feature very low turn-on
voltage and fast switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
BAS40
1
3
2
Top View
1
3
2
BAS40-04
Marking: 43
Marking: 44
1
3
2
Top View
1
3
2
BAS40-05
BAS40-06
Marking: 45
Marking: 46
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 C
ambient temperature unless otherwise specified
BAS40 THRU BAS40-06
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
Tested with 10
A Pulses
V
(BR)R
40
V
Leakage Current
Pulse Test t
p
< 300
s
at V
R
= 30 V
I
R
20
100
nA
Forward Voltage
Pulse Test t
p
< 300
s
at I
F
= 1 mA
at I
F
= 40 mA
V
F
V
F
380
1000
mV
mV
Capacitance
at V
R
= 0 V, f = 1 MHz
C
tot
4.0
5
pF
Reverse Recovery Time
from I
F
= 10 mA through I
R
= 10 mA to I
R
= 1 mA
t
rr
5
ns
Thermal Resistance Junction to Ambient Air
R
thJA
430
1)
K/W
1)
Device on fiberglass substrate, see layout
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
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