EGF1A THRU EGF1D
ULTRAFAST SURFACE MOUNT RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Superfast recovery times for high efficiency
Glass passivated cavity-free junction
Built-in strain relief
Easy pick and place
High temperature soldering guaranteed: 450C/5 seconds
at terminals
Complete device submersible temperature of
265C for 10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOLS EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
Volts
Maximum RMS voltage
V
RMS
35
70
105
140
Volts
Maximum DC blocking voltage
V
DC
50
100
150
200
Volts
Maximum average forward rectified current
at T
L
=125C
I
(AV)
1.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
I
FSM
30.0
Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
V
F
1.0 Volts
Maximum DC reverse current
T
A
=25C
5.0
at rated DC blocking voltage
T
A
=125C
I
R
50.0
A
Typical reverse recovery time
(NOTE 1)
t
rr
50.0
ns
Typical junction capacitance
(NOTE 2)
C
J
15.0
pF
Typical thermal resistance
(NOTE 3)
R
JA
85.0
R
JL
30.0
C/W
Operating junction and storage temperature range
T
J
,T
STG
-65 to +175
C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied V
R
=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
4/98
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.0105 (0.27)
0.030 (0.76)
0.060 (1.52)
0.006
0.152
TYP.
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.106 (2.69)
0.118 (3.00)
0.040 (1.02)
0.060 (1.52)
0.098 (2.49)
0.108 (2.74)
DO-214BA
PA
TENTED*
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
175
0
100
0
0.5
1.0
25
50
75
125
150
20
80
0.1
10
100
0
40
60
100
1,000
0
1
1
10
5.0
10
20
100
0
15
25
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0.1
1
10
50
0.01
0.1
1
10
100
0.1
1
10
100
0.1
1
10
100
0
10
20
30
40
50
60
70
RATINGS AND CHARACTERISTICS CURVES EGF1A THRU EGF1D
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
LEAD TEMPERATURE, C
A
VERA
GE FOR
W
ARD RECTIFIED CURRENT
,
AMPERES
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED on
0.2 x 0.2" (5.0 x 5.0mm)
COPPER PAD AREAS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS REVERSE LEAKA
GE CURRENT
,
MICR
O
AMPERES
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
T
J
=25C
T
J
=150C
PULSE WIDTH=300
s
1% DUTY CYCLE
FIG. 3 -TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
,
AMPERES
T
J
=T
J
max.
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
t, PULSE DURATION, sec.
TRANSIENT THERMAL
IMPED
ANCE,
C/W
T
J
=25
C
f=1.0 MHz
Vsig=50mVp-p
T
J
=150C
T
J
=100C
T
J
=25C
NUMBER OF CYCLES AT 60 H
Z
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAP
A
CIT
ANCE, pF
REVERSE VOLTAGE, VOLTS
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