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Электронный компонент: ES1D

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ES1A THRU ES1D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Ideally suited for use in
very high frequency switching power supplies,
inverters and as a free wheeling diodes
Ultrafast recovery times for high efficiency
Low forward voltage
Low leakage current
Glass passivated chip junction
High temperature soldering guaranteed:
250C/10 seconds on terminals
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOLS
ES1A
ES1B
ES1C
ES1D
UNITS
Device marking code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
Volts
Maximum RMS voltage
V
RMS
35
70
105
140
Volts
Maximum DC blocking voltage
V
DC
50
100
150
200
Volts
Maximum average forward rectified current
at T
L
=120C
I
(AV)
1.0
Amp
Peak forward surge current
8.3ms single half sine-wave superimposed on
I
FSM
30.0
Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.6A
0.865
at
1.0A
V
F
0.920
Volts
Maximum DC reverse current
T
A
=25C
5.0
at rated DC blocking voltage
T
A
=100C
I
R
100
A
Maximum reverse recovery time
(NOTE 1)
t
rr
15.0
ns
Maximum reverse recovery time
T
A
=25C
25.0
(NOTE 2)
T
A
=100C
t
rr
35.0
ns
Maximum stored charge
T
A
=25C
10.0
(NOTE 2)
T
A
=100C
Q
rr
25.0
nC
Typical junction capacitance
(NOTE 3)
C
J
7.0
pF
Maximum thermal resistance
(NOTE 4)
R
JA
85.0
C/W
R
JL
35.0
Operating and storage temperature range
T
J
, T
STG
-55 to +150
C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) t
rr
and Q
rr
measured at: I
F
=0.6A, V
R
=30V, di/dt=50A/
s, I
rr
=10% I
RM
for measurement of t
rr
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 volts
(4) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad area
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
DO-214AC
Dimensions in inches and (millimeters)
80
90
100
110
120
130
140
150
0
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0.1
1
10
50
0.1
1
10
100
0
2.0
4.0
6.0
8.0
10
12
14
1
10
100
5.0
10
15
20
25
30
0
0.1
1
10
100
1
10
100
0
20
40
60
80
100
0.01
0.1
1
10
100
1,000
RATINGS AND CHARACTERISTIC CURVES ES1A THRU ES1D
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
LEAD TEMPERATURE, C
A
VERA
GE FOR
W
ARD RECTIFIED
CURRENT
, AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 H
Z
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
,
AMPERES
INST
ANT
ANEOUS REVERSE LEAKA
GE CURRENT
,
MICR
O
AMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAP
A
CIT
ANCE, pF
REVERSE VOLTAGE, VOLTS
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at T
L
=120C
T
J
=125C
T
J
=85C
T
J
=25C
T
J
=25C
PULSE WIDTH=300
s
1% DUTY CYCLE
T
J
=25C
f=1.0 MH
Z
Vsig=50mVp-p
RESISTIVE OR
INDUCTIVE LOAD
0.2 x 0.2" (5.0 x 5.0mm)
COPPER PAD AREAS
FIG. 5 - TYPICAL THERMAL IMPEDANCE
TRANSIENT THERMAL
IMPED
ANCE,
C/W
MOUNTED on 0.2 x 0.2"(5 x 7mm)
COPPER PAD AREAS
t, PULSE DURATION, SEC