GF1A thru GF1M
Vishay Semiconductors
formerly General Semiconductor
Document Number 88617
www.vishay.com
08-Jul-02
1
Surface Mount Glass Passivated Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.0A
DO-214BA (GF1)
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
GF1A GF1B GF1D GF1G GF1J GF1K GF1M
Unit
Device marking code
GA
GB
GD
GG
GJ
GK
GM
Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V
RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at T
L
= 125C
I
F(AV)
1.0
A
Peak forward surge current 8.3ms single half sine-wave
I
FSM
30
A
superimposed on rated load (JEDEC Method)
Typical thermal resistance
(1)
R
JA
80
C/W
R
JL
26
Operating junction and storage temperature range
T
J
,T
STG
65 to +175
C
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
GF1A GF1B GF1D GF1G GF1J GF1K GF1M
Unit
Maximum instantaneous forward voltage at 1.0A
V
F
1.10
1.20
V
Maximum DC reverse current
T
A
= 25C
I
R
5.0
A
at rated DC blocking voltage
T
A
= 125C
50
Typical reverse recovery time at
t
rr
3.0
s
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25 A
Typical junction capacitance at 4.0V, 1MHz
C
J
15
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Cavity-free glass passivated junction
Capable of meeting environmental standards of
MIL-S-19500
Built-in strain relief Easy pick and place
High temperature soldering guaranteed:
450C/5 seconds at terminals.
Complete device submersible temperature of 265C for
10 seconds in solder bath
Mechanical Data
Case: JEDEC DO-214BA, molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0048 oz, 0.120 g
Dimensions in inches and (millimeters)
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazen-lead assembly by Patent
No. 3,930,306 and lead forming by Patent No. 5,151,846
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118 (3.00)
0.040 (1.02)
0.066 (1.68)
0.098 (2.49)
0.108 (2.74)
0.006 (0.152) TYP.
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
Patented*
GF1A thru GF1M
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88617
2
08-Jul-02
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
I
F
--
Instantaneous Forward Current (A)
10
1
I
R
--
Instantaneous Reverse
Leakage Current (mA)
Fig. 4 Typical Reverse Characteristics
0.1
0.01
Fig. 1 Forward Current Derating Curve
Fig. 2 Maximum Non-Repetitive Peak
Forward Surge Current
0
100
130
110
120
140
150
160
175
A
verage Forward Rectified Current (A)
Number of Cycles at 60 H
Z
0
15
20
25
10
5
30
1
10
100
Lead Temperature (
C)
0.1
1
10
0.01
T
J
= 25
C
T
J
= 100
C
0.4
0.6
1.4
1.6
0.8
1.0
1.2
Pulse Width = 300
s
1% Duty Cycle
T
J
= 25
C
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
20
0
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 Typical Instantaneous
Forward Characteristics
Instantaneous Forward Voltage (V)
0.5
1.0
Peak Forward Surge Current (A)
1
10
100
10
30
1
Reverse Voltage (V)
T
J
= 25
C
f = 1.0 MH
Z
V
sig
= 50mVp-p
Fig. 5 Typical Junction Capacitance
pF
--
Junction Capacitance
T
ransient
Thermal Impedance (
C/W)
0.01
1
10
100
10
100
0.1
0.1
1
t -- Pulse Duration (sec.)
Fig. 6 Typical Transient
Thermal Impedance
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
Mounted on
0.2 x 0.27" (5.0 x 7.0mm)
Copper Pad Areas
60 H
Z
Resistive or Inductive Load
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