Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source-Voltage V
GS
20
V
Continuous Drain Current
(2)
T
A
= 25C
I
D
2.5
A
T
J
= 150C
T
A
= 70C
2.0
Pulsed Drain Current
(1)
I
DM
10
A
Maximum Power Dissipation
(2)
T
A
= 25C
1.25
T
A
= 70C
P
D
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
C
Maximum Junction-to-Ambient Thermal Resistance
(2)
R
JA
100
C/W
Note:
(1) Pulse width limited by maximum junction temperature.
(2) Surface mounted on FR4 board, t
5 sec.
GF2303A
P-Channel Enhancement-Mode MOSFET
V
DS
30V R
DS(ON)
0.12
I
D
2.5A
8/2/01
Features
Advanced Trench Process Technology
High density cell design for ultra-low on-resistance
Popular SOT-23 package with copper lead frame
for superior thermal and electrical capabilities
Compact and low profile
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 3A
New Product
TO-236AB (SOT-23)
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
T
RENCH
G
EN
F
ET
Pin Configuration
1. Gate
2. Source
3. Drain
ma
x
.
.004
(
0.1
)
1
2
3
Top View
.020 (0.51)
.015 (0.37)
.118 (3.0)
.110 (2.8)
.055 (1.40)
.047 (1.20)
.098 (2.5)
.091 (2.3)
.041 (1.03)
.035 (0.89)
.041 (1.03)
.035 (0.89)
.007 (.180)
.003 (.085)
.020 (0.51)
.015 (0.37)
.020 (0.51)
.015 (0.37)
.047 (1.20)
.035 (0.90)
Dimensions in inches
and (millimeters)
GF2303A
P-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
=
20V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
1.0
A
V
DS
= 30V, V
GS
= 0V, T
J
= 55C
--
--
10
On-State Drain Current
(1)
I
D(on)
V
DS
5V, V
GS
= 10V
6
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 2.5A
100
120
m
V
GS
= 4.5V, I
D
= 2.0A
150
180
Forward Transconductance
(1)
g
fs
V
DS
= 10V, I
D
= 2.5A
4.8
S
Dynamic
Total Gate Charge
Q
g
7.8
12
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
1.0
nC
Gate-Drain Charge
Q
gd
I
D
= 2.5A
1.3
Turn-On Delay Time
t
d(on)
4
20
Rise Time
t
r
V
DD
= 15V, R
L
= 15
3
20
Turn-Off Delay Time
t
d(off)
I
D
= 1A, V
GEN
= 10V
68
90
ns
Fall Time
t
f
R
G
= 6
30
50
Input Capacitance
C
iss
V
DS
= 15V, V
GS
= 0V
370
Output Capacitance
C
oss
f = 1.0MH
Z
60
pF
Reverse Transfer Capacitance
C
rss
35
Source-Drain Diode
Maximum Diode Forward Current
I
S
1.25
A
Diode Forward Voltage
V
SD
I
S
= 1.25A, V
GS
= 0V
1.0
1.2
V
Note:
(1) Pulse test; pulse width
300
s, duty cycle
2%
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
GF2303A
P-Channel Enhancement-Mode MOSFET
0
2
4
6
10
0
1
2
3
4
5
Fig. 1 Output Characteristics
0.2
0
0.4
0.8
0.6
0
2
4
6
8
10
Fig. 4 On-Resistance
vs. Drain Current
0
2
4
8
6
10
0
1
2
3
4
5
6
Fig. 2 Transfer Characteristics
8
0.8
0.6
1.2
1.4
1.6
1
Fig. 5 On-Resistance
vs. Junction Temperature
V
GS
=
--
10.0V
I
D
=
--
2.5A
--55
C
V
GS
=
--
4.5V
25
C
V
GS
=
--
10.0V
Fig. 3 Threshold Voltage
vs. Temperature
--
I
D
-
-
Drain-to-Source Current (A)
--V
DS
-- Drain-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance (
)
-- I
D
-- Drain Current (A)
-- I
D
-
-
Drain Current (A)
-- V
GS
-- Gate-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance
(Normalized)
T
J
-- Junction Temperature (
C)
--
V
GS(th)
-
-
Gate-to-Source
Threshold V
oltage (V) (Normalized)
T
J
-- Junction Temperature (
C)
T
J
= 125
C
--
50
--
25
25
50
75
100
125
150
0
--
50
--
25
25
50
75
100
125
150
0
0.8
0.7
0.6
0.9
1.0
1.2
1.1
V
DS
= --10V
I
D
=
--
250
A
0
0.2
0.1
0.3
0.4
0.5
0.6
2
3
4
5
6
7
8
9
10
R
DS(ON)
-
-
On-Resistance (
)
-- V
GS
-- Gate-to-Source Voltage (V)
I
D
=
--
2.5A
T
J
=
125
C
T
J
=
25
C
Fig. 6 On-Resistance
vs. Gate-to-Source Voltage
--
4.5V
--
4.0V
--
3.5V
--
3.0V
--
2.5V
--
5.0V
V
GS
=
--
10.0V,
--
8.0V,
--
7.0V,
--
6.0V
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GF2303A
P-Channel Enhancement-Mode MOSFET
0
2
4
6
8
10
0
1
4
3
2
Fig. 7 Gate Charge
5
6
7
8
V
DS
=
--
10V
I
D
=
--
2.5A
Q
g
-- Total Gate Charge (nC)
-- V
GS
-
-
Gate-to-Source V
oltage (V)
1
0.1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--
I
S
-
-
Source Current (A)
--V
SD
-- Source-to-Drain Voltage (V)
T
J
= 125
C
25
C
--
55
C
Fig. 9 Source-Drain Diode
Forward Voltage
V
GS
=
0
V
0
100
200
300
400
500
0
5
10
15
20
25
30
Fig. 8 Capacitance
C
iss
C
oss
C
rss
C -
-
Capacitance (pF)
--V
DS
-- Drain-to-Source Voltage (V)
f = 1MHz
V
GS
= 0V
Fig. 12 Maximum Safe Operating Area
0.0001 0.001
0.01
0.01
0.001
0.1
0.1
1
1
10
100
-- I
D
-
-
Drain Current (A)
-- V
DS
-- Drain-Source Voltage (V)
R
JA
(norm)
-
-
Normalized
Thermal
Impedance
Pulse Duration (sec.)
Single Pulse
0.001
0.01
0.1
0
0.01
0.1
0.1
1
1
10
100
10
100
5
10
15
20
1
10
100
Fig. 11 Power vs. Pulse Duration
Power (W)
Pulse Duration (sec.)
Single Pulse
R
JA
= 100
C/W
T
A
= 25
C
V
GS
= --10V
Single Pulse
R
JA
= 100
C/W
T
A
= 25
C
R
DS(ON)
Limit
100
s
1ms
10ms
100ms
1s
DC
D = 0.5
0.2
0.01
0.1
t
1
t
2
P
DM
1. Duty Cycle, D = t
1
/t
2
2. R
JA
(t) = R
JA(norm)
*R
JA
3. R
JA
= 100
C/W
4. T
J
- T
A
= P
DM
* R
JA
(t)
0.05
0.02
Fig. 10 Thermal Transient Impedance
Junction-to-Ambient
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
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