Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
25
Continuous Drain Current
T
A
= 25C
I
D
9
T
J
= 150C
(1)
T
A
= 70C
7
A
Pulsed Drain Current
I
DM
40
Maximum Power Dissipation
(1)
T
A
= 25C
P
D
2.5
W
T
A
= 70C
1.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Maximum Junction-to-Ambient
(1)
Thermal Resistance
R
JA
50
C/W
Notes: (1) Surface mounted on FR4 board, t
10 sec.
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
GF4800
N-Channel Enhancement-Mode MOSFET
V
DS
30V R
DS(ON)
18.5
m
I
D
9A
7/10/01
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Reduced Gate Charge
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
0.010 (0.25)
x 45
0
8
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
T
RENCH
G
EN
F
ET
New Product
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
0.8
3.0
V
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
= 0V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
1
A
V
DS
= 24V, V
GS
= 0V, T
J
= 55C
5
On-State Drain Current
(1)
I
D(on)
V
DS
5V, V
GS
= 10V
40
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 9A
15.5
18.5
m
V
GS
= 4.5V, I
D
= 7A
23.5
33
Forward Transconductance
(1)
g
fs
V
DS
= 15V, I
D
= 9A
26
S
Dynamic
Total Gate Charge
Q
g
V
DS
= 15V, V
GS
= 5V,I
D
= 9A
10.5
13
20.5
28
nC
Gate-Source Charge
Q
gs
V
DS
= 15V, I
D
= 9A
3.5
Gate-Drain Charge
Q
gd
V
GS
= 10V
3.1
Turn-On Delay Time
t
d(on)
9
15
Turn-On Rise Time
t
r
V
DD
= 15V, I
D
= 1A
5
10
Turn-Off Delay Time
t
d(off)
V
GEN
= 10V, R
G
= 6
31
45
ns
Turn-Off Fall Time
t
f
R
L
= 15
5
10
Input Capacitance
C
iss
V
DS
= 15V, V
GS
= 0V
1160
Output Capacitance
C
oss
f = 1.0MH
Z
195
pF
Reverse Transfer Capacitance
C
rss
90
Source-Drain Diode
Diode Forward Voltage
(1)
V
SD
I
S
= 2.3A, V
GS
= 0V
0.75
1.2
V
Continuous Source Current (Diode Conduction)
I
S
2.3
A
Notes: (1) Pulse test; pulse width
300
s, duty cycle
2%
GF4800
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
GF4800
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0
5
10
20
25
30
35
40
0
1
2
3
4
Fig. 1 Output Characteristics
0.005
0.015
0.01
0.02
0.03
0.04
0
0.025
0.035
0
5
10
15
20
25
30
35
40
Fig. 4 On-Resistance
vs. Drain Current
0
5
15
10
20
25
30
35
40
1
2
3
4
5
6
Fig. 2 Transfer Characteristics
15
0.8
0.6
1.2
1.4
1.6
1
Fig. 5 On-Resistance
vs. Junction Temperature
V
GS
= 10V
I
D
= 9A
--
55
C
3.0V
10V
Fig. 3 Threshold Voltage
vs. Temperature
I
D
= 250
A
I
D
-
-
Drain-to-Source Current (A)
R
DS(ON)
-
-
On-Resistance (
)
I
D
-- Drain Current (A)
I
D
-
-
Drain Current (A)
V
GS
-- Gate-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance (Normalized)
T
J
-- Junction Temperature (
C)
V
GS(th)
-
-
Gate-to-Source
Threshold V
oltage
T
J
-- Junction Temperature (
C)
--
50
--
25
25
50
75
100
125
150
0
--
50
--
25
25
50
75
100
125
150
0
0.8
1.4
1.6
1.8
2.0
2.2
1.2
1.2
V
GS
=
10V
3.5V
4.5V
V
DS
= 10V
V
DS
-- Drain-to-Source Voltage (V)
4.0V
5.0V
6.0V
25
C
T
J
= 125
C
V
GS
= 4.5V
GF4800
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
= 125
C
Fig. 9 Source-Drain Diode
Forward Voltage
V
GS
= 0V
0
2
4
6
8
10
0
4
8
Fig. 7 Gate Charge
12
16
20
24
V
DS
= 15V
I
D
= 9A
0
300
600
900
1200
1500
0
5
10
15
25
30
20
Fig. 8 Capacitance
C
iss
f = 1MH
Z
V
GS
= 0V
I
S
-
-
Source Current (A)
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Gate Charge (nC)
V
GS
-
-
Gate-to-Source V
oltage (V)
C -
-
Capacitance (pF)
V
DS
-- Drain-to-Source Voltage (V)
--55
C
C
oss
25
C
0
0.02
0.04
0.05
0.06
0.03
0.01
2
4
6
8
10
Fig. 6 On-Resistance
vs. Gate-to-Source Voltage
I
D
= 9A
R
DS(ON)
-
-
On-Resistance (
)
V
GS
-- Gate-to-Source Voltage (V)
T
J
= 125
C
25
C
0.07
C
rss
GF4800
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Fig. 11 Transient Thermal
Impedance
Fig. 13 Maximum Safe Operating Area
I
D
-
-
Drain Current (A)
V
DS
-- Drain-Source Voltage (V)
0.01
0.1
0.1
1
1
10
100
10
100
Fig. 12 Power vs. Pulse Duration
V
GS
= 10V
Single Pulse
on 1-in
2
2oz Cu.
T
A
= 25
C
R
DS(ON)
Limit
100
s
1m
s
10ms
100ms
1s
DC
10s
0.1
0.01
0
10
20
30
40
50
60
70
1
10
100
36
38
39
40
41
42
37
Fig. 10 Breakdown Voltage vs.
Junction Temperature
I
D
= 250
A
BV
DSS
-
-
Drain-to-Source
Breakdown V
oltage (V)
T
J
-- Junction Temperature (
C)
--50
--25
25
50
75
100
125
0
150
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