/home/web/doc/html/ge/171981
5
1
4
0.260 (6.60)
0.244 (6.20)
8
0.177 (4.50)
0.170 (4.30)
0.012 (0.30)
0.010 (0.25)
0.025 (0.65)
0.006 (0.15)
0.002 (0.05)
0.122 (3.10)
0.114 (2.90)
0.047 (1.20)
0.041 (1.05)
0
8
0.005 (0.127)
0.028 (0.70)
0.020 (0.50)
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Li-ion battery packs use
Designed for battery-switch applications
Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current (T
J
= 150C)
(1)
I
D
6.2
A
Pulsed Drain Current
I
DM
30
A
Maximum Power Dissipation
(1)
T
A
= 25C
P
D
1.5
W
T
A
= 70C
0.96
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Maximum Junction-to-Ambient
(1)
Thermal Resistance
R
JA
83
C/W
Notes: (1) Surface mounted on FR4 board, t
10 sec.
Mechanical Data
Case: TSSOP-8 Package
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
GF6968A
Common-Drain Dual N-Channel MOSFET
Low V
GS(th)
V
DS
20V R
DS(ON)
22
m
I
D
6.2A
4/11/01
D
1
D
8
S
2
7
S
2
6
G
2
5
S
1
2
S
1
3
G
1
4
0.260 (6.60) min.
0.012 (0.30)
0.010 (0.25)
0.025 (0.65)
0.204 (5.20)
0.028 (0.70)
0.020 (0.50)
Dimensions in inches
and (millimeters)
New Product
TSSOP-8
T
RENCH
G
EN
F
ET
Mounting Pad Layout
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS,
I
D
= 250
A
0.6
V
Gate Body Leakage
I
GSS
V
GS
= 12V, V
DS
= 0V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V
1
A
On-State Drain Current
(1)
I
D(on)
V
DS
5V, V
GS
= 4.5V
30
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 4.5V, I
D
= 6.2A
17.5
22
m
V
GS
= 2.5V, I
D
= 5.3A
25
30
Forward Transconductance
(1)
g
fs
V
DS
= 10V, I
D
= 6.2A
26.5
S
Dynamic
Total Gate Charge
Q
g
14
20
Gate-Source Charge
Q
gs
V
DS
= 10V, V
GS
= 4.5V
2.2
nC
Gate-Drain Charge
Q
gd
I
D
= 6.2A
3
Turn-On Delay Time
t
d(on)
11
30
Turn-On Rise Time
t
r
V
DD
= 10V, R
L
= 10
15
50
Turn-Off Delay Time
t
d(off)
I
D
= 1A, V
GEN
= 4.5V
43
100
ns
Fall Time
t
f
R
G
= 6
22
50
Input Capacitance
C
iss
V
DS
= 10V, V
GS
= 0V
1240
Output Capacitance
C
oss
f = 1.0 MHz
200
pF
Reverse Transfer Capacitance
C
rss
120
Source-Drain Diode
Maximum Diode Forward Current
I
S
--
1.7
A
Diode Forward Voltage
V
SD
I
S
= 6.2A, V
GS
= 0V
0.8
1.2
V
Note: (1) Pulse test; pulse width
300
s, duty cycle
2%
GF6968A
Common-Drain Dual N-Channel MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
GF6968A
Common-Drain Dual N-Channel MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0
5
10
15
25
30
0
1
2
3
4
Fig. 1 Output Characteristics
0.01
0.015
0.02
0.025
0.035
0.03
0.04
0
5
10
15
20
25
30
Fig. 4 On-Resistance vs.
Drain Current
0
5
10
20
15
25
30
0
0.5
1.0
2.0
1.5
2.5
3.0
Fig. 2 Transfer Characteristics
20
1.5V
0.8
0.6
1.4
1.6
1.2
1
Fig. 5 On-Resistance vs.
Junction Temperature
V
GS
= 4.5V
I
D
= 6.2A
V
GS
= 4.5V
T
J
= 125
C
2.0V
2.5V
V
DS
= 10V
3.5V
0.3
1.1
0.9
0.5
0.7
Fig. 3 Threshold Voltage
vs. Temperature
I
D
= 250
A
I
D
-
-
Drain Source Current (A)
V
DS
-- Drain-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance (
)
I
D
-- Drain Current (A)
I
D
-
-
Drain Current (A)
V
GS
-- Gate-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance
(Normalized)
T
J
-- Junction Temperature (
C)
V
GS(th)
-
-
Threshold V
oltage (V)
T
J
-- Junction Temperature (
C)
--
50
--
25
25
50
75
100
125
150
0
--
50
--
25
25
50
75
100
125
150
0
3.0V
--
55
C
25
C
V
GS
= 2.5V
V
GS
=
4.5V
GF6968A
Common-Drain Dual N-Channel MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
= 125
C
Fig. 9 Source-Drain Diode
Forward Voltage
V
GS
= 0V
0
1
2
3
4
5
0
2
4
8
6
Fig. 7 Gate Charge
10
12
14
16
V
DS
= 10V
I
D
= 6.2A
0
300
600
900
1200
1500
1800
0
4
8
12
16
20
Fig. 8 Capacitance
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
I
S
-
-
Source Current (A)
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Gate Charge (nC)
V
GS
-
-
Gate-to-Source V
oltage (V)
C -
-
Capacitance (pF)
V
DS
-- Drain-to-Source Voltage (V)
--55
C
Fig. 6 On-Resistance vs.
Gate-to-Source Voltage
I
D
= 6.2A
0
0.02
0.04
0.06
0.08
1
2
3
4
5
T
J
= 125
C
T
J
= 25
C
R
DS(ON)
-
-
On-Resistance (
)
V
GS
-- Gate-to-Source Voltage (V)
25
C
GF6968A
Common-Drain Dual N-Channel MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Fig. 11 Transient Thermal
Impedance
Fig. 13 Maximum Safe Operating Area
I
D
-
-
Drain Current (A)
V
DS
-- Drain-Source Voltage (V)
0.01
0.1
0.1
1
1
10
100
10
100
Fig. 12 Power vs. Pulse Duration
V
GS
= 10V
Single Pulse
on 1-in
2
2oz Cu.
T
A
= 25
C
R
DS(ON)
Limit
100
s
1ms
10ms
100ms
1s
DC
10s
0.1
0.01
0
5
10
15
20
25
1
10
100
29
28
30
32
33
31
Fig. 10 Breakdown Voltage vs.
Junction Temperature
I
D
= 250
A
BV
DSS
-
-
Breakdown V
oltage (V)
T
J
-- Junction Temperature (
C)
--50
--25
25
50
75
100
125
0
150
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