0
10
20
30
50
60
70
0
0.5
1
1.5
2
2.5
Fig. 1 Output Characteristics
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0
20
40
60
80
100
Fig. 4 On-Resistance vs.
Drain Current
0
10
20
40
30
50
70
60
1
2
3
4
5
Fig. 2 Transfer Characteristics
40
V
GS
= 2.5V
0.8
0.6
1.4
1.6
1.2
1
--50
--25
25
50
75
100
125
150
0
Fig. 5 On-Resistance vs.
Junction Temperature
V
GS
= 10V
I
D
= 35A
V
GS
= 4.5V
25
C
V
GS
= 10V
T
J
= 125
C
--55
C
3.0V
3.5V
6.0V
4.0V
V
DS
= 10V
10V
0.6
1.4
1.2
1.6
1.8
0.8
1
--50
--25
25
50
75
100
125
150
0
Fig. 3 Threshold Voltage vs.
Temperature
I
D
= 250
A
I
D
-
-
Drain Source Current (A)
V
DS
-- Drain-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance (
)
I
D
-- Drain Current (A)
I
D
-
-
Drain Current (A)
V
GS
-- Gate-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance
(Normalized)
T
J
-- Junction Temperature (
C)
V
GS(th)
-
-
Threshold V
oltage (V)
T
J
-- Junction Temperature (
C)
4.5V
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GFB70N03
N-Channel Enhancement-Mode MOSFET
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
5
10
15
30
20
25
Fig. 8 Capacitance
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
0
2
4
6
8
10
0
10
20
40
30
Fig. 7 Gate Charge
50
60
70
V
DS
= 15V
I
D
= 35A
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
= 125
C
Fig. 9 Source-Drain Diode
Forward Voltage
25
C
--55
C
V
GS
= 0V
I
S
-
-
Source Current (A)
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Gate Charge (nC)
V
GS
-
-
Gate-to-Source V
oltage (V)
C -
-
Capacitance (pF)
V
DS
-- Drain-to-Source Voltage (V)
0
0.005
0.01
0.02
0.015
0.025
0.03
2
4
6
8
10
Fig. 6 On-Resistance vs.
Gate-to-Source Voltage
I
D
= 35A
T
J
= 125
C
25
C
R
DS(ON)
-
-
On-Resistance (
)
V
GS
-- Gate-to-Source Voltage (V)
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GFB70N03
N-Channel Enhancement-Mode MOSFET
36
35
37
39
40
38
--50
--25
25
50
75
100
125
0
Fig. 10 Breakdown Voltage
vs. Junction Temperature
150
I
D
= 250
A
BV
DSS
-
-
Breakdown V
oltage (V)
T
J
-- Junction Temperature (
C)
Fig. 13 Maximum Safe Operating Area
0.0001
0.001
0.01
0.01
0.1
0.1
1
1
10
I
D
-
-
Drain Current (A)
V
DS
-- Drain-Source Voltage (V)
Fig. 11 Thermal Impedance
R
JA
(norm)
-
-
Normalized
Thermal
Impedance
Pulse Duration (sec.)
Single Pulse
0.001
0.0001
0.01
0.1
0
0.1
1
1
10
100
1000
10
100
200
400
600
800
1000
1
10
Fig. 12 Power vs. Pulse Duration
Power (W)
Pulse Duration (sec.)
Single Pulse
R
JC
= 2.0
C/W
T
C
= 25
C
V
GS
= 10V
Single Pulse
R
JC
= 2.0 C/W
T
C
= 25
C
R
DS
(ON)
Limit
100
s
1ms
10ms
DC
D = 0.5
0.2
0.1
t
1
t
2
P
DM
1. Duty Cycle, D = t
1
/t
2
2. R
JC
(t) = R
JC(norm)
*R
JC
3. R
JC
= 2.0
C/W
4. T
J
- T
C
= P
DM
* R
JC
(t)
0.05
100ms
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GFB70N03
N-Channel Enhancement-Mode MOSFET
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